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首页> 外文会议>Symposium L on nitrides and related wide band gap materials of the E-MRS conference >Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy
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Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

机译：金属有机气相外延和氢化物气相外延的选择性地区生长和外延横向过度生长

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摘要

Recent results on the selective area growth (SAG) and epitaxial lateral overgrowth (ELO) o GaN via metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HYPE) are reported. GaN sub-micron dots have been fabricated successfully via MOVPE-SAG on dot-patterned GaN (0001) epitaxial layer/sapphire substrate and also on dot-patterned sapphire substrate using AlN low temeprature (LT) buffer layer. The smooth surface is obtained via MOVPE-ELO for both the <1120> and <1100> sub-micron SiO_2 stripes. The reduction in dislocation density is confirmed by using TEM. Furthermore, the HVPE-ELO of GaN is performed on two mask patterns with the <1120> and <1100> stripes. In the <1120> stripe the ELO layer surface is not uniform, covered with {1101} facets in which the growth rate is very slow. On the other hand, in the <1100> stripe the surface of the ELO layer becomes uniform with (0001) face. The defect structures of the ELO layers are characterized by a growth pit density (GPD) using a thin InGaN epitaxial layer grown on the ELO GaN layer and a cathodoluminescence (CL). It is found that the defect structures are strongly related to the growth mechanism during the ELO process.
机译：据报道，近期通过金属有机气相外延（MOVPE）和氢化物气相外延（耐氢化物）和氢化物气相外延（Hype）的选择性面积生长（下垂）和外延横向过度生长（ELO）O GaN的结果。 GaN亚微米点已经通过Movpe-SAG在点图案GaN（0001）外延层/蓝宝石衬底上成功制造，并且还使用ALN低温（LT）缓冲层在点图案的蓝宝石衬底上。通过MovPe-ELO获得光滑表面，用于<1120>和<1100个子微米SiO_2条纹。使用TEM确认位错密度的降低。此外，GaN的HVPE-ELO在具有<1120>和<1100>条纹的两个掩模图案上进行。在<1120>条纹中，ELO层表面不均匀，覆盖有{1101}小平面，其中增长率非常慢。另一方面，在<1100>条纹中，ELO层的表面与（0001）面部变均匀。 ELO层的缺陷结构的特征在于使用在ELO GaN层和阴极发光（C1）上生长的薄InGaN外延层的生长坑密度（GPD）。发现缺陷结构与ELO过程中的生长机制密切相关。

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