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Growth and characterisation of electrodeposited ZnO thin films

机译：电沉积ZnO薄膜的生长与表征

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摘要

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 ℃ onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be ～ 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductiⅥty and current-voltage measurements showed the glass/FTO/ZnO/Au deⅥces exhibit rectifying properties. The thickness of the ZnO films was found to be 0.40 urn as measured using the Talysurf instrument, after deposition for 3 min. EnⅥronmental scanning electron microscopy was used to Ⅵew the cross-section of glass/FTO/ZnO layers.
机译：电化学方法已被用于在80℃下将硝酸锌水溶液中的氧化锌（ZnO）薄膜沉积到掺氟氧化锡（FTO）涂层的玻璃基板上。通过伏安图确定，ZnO薄膜在相对于Ag / AgCl的-0.900和-1.025 V之间生长。为了研究退火的效果，对沉积和退火的薄膜都进行了ZnO薄膜的表征。 ZnO薄膜的结构分析是使用X射线衍射进行的，显示出具有（002）优先取向的六方相多晶膜。原子力显微镜用于研究表面形态。光学研究确定带隙为〜3.20 eV，折射率为2.35。光电化学电池信号表明该膜具有n型导电性，电流电压测量表明玻璃/ FTO / ZnO / Au器件具有整流性能。沉积3分钟后，使用Talysurf仪器测得的ZnO膜厚度为0.40微米。用环境扫描电子显微镜观察玻璃/ FTO / ZnO层的横截面。

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  • 来源
    《Thin Solid Films》 |2008年第12期|3893-3898|共6页
  • 作者

    J.S. Wellings; N.B. Chaure; S.N. Heavens; I.M. Dharmadasa;

  • 作者单位

    Solar Energy Group, Materials & Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1 WB, UK;

    Solar Energy Group, Materials & Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1 WB, UK;

    Ionotec Ltd, 14 Berkeley Court, Manor Park, Runcorn, Cheshire WA7 1TQ, UK;

    Solar Energy Group, Materials & Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1 WB, UK;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    electrodeposition; ZnO; X-ray diffraction; Ⅱ-Ⅵ compound semiconductor;

    机译：电沉积氧化锌;X射线衍射;Ⅱ-Ⅵ族化合物半导体;

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