Microstructure and electrical properties of Cu films obtained by chemical vapor deposition of copper(Ⅰ) pentafluoropropionate complexes with vinyltrialkylsilanes

著录项

• 来源
  《Thin Solid Films》 |2008年第12期|3924-3930|共7页
• 作者

  P. Piszczek; I. Szymanska; W. Bala; K. Bartkiewicz; E. Talik; J. Heiman;

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• 作者单位

  Faculty of Chemistry, Nicolaus Copernicus University, ul. Gagarina 7, 87-100 Torun, Poland;

  Faculty of Chemistry, Nicolaus Copernicus University, ul. Gagarina 7, 87-100 Torun, Poland;

  Faculty of Physics, Astronomy, and Informatics, Nicolaus Copernicus University, ul, Grudziqdzka 3, 87-100 Torun, Poland;

  Faculty of Physics, Astronomy, and Informatics, Nicolaus Copernicus University, ul, Grudziqdzka 3, 87-100 Torun, Poland;

  Department of Physics, Silesian University, ul. Uniwersytecka 4, 40-007 Katowice, Poland;

  Department of Physics, Silesian University, ul. Uniwersytecka 4, 40-007 Katowice, Poland;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  copper(Ⅰ) precursors; chemical vapor deposition; electrical conductivity; microstructural properties; copper layers; surface analysis;

  机译：铜（Ⅰ）前体;化学气相沉积;电导率微观结构特性铜层表面分析;