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首页> 外文期刊>Thin Solid Films >Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures
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Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

机译：Ni金属膜的氧化动力学：NiO基电阻开关结构的形成

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摘要

Resistive switching controlled by external voltage has been reported in many Metal/Resistive oxide/Metal (MRM) structures in which the resistive oxide was simple transition metal oxide thin films such as NiO or TiO_2 deposited by reactive sputtering. In this paper, we have explored the possibility to form NiO-based MRM structures from the partial oxidation of a blanket Ni metallic film using a Rapid Thermal Annealing route, the remaining Ni layer being used as bottom electrode. X-ray diffraction was used to apprehend the Ni oxidation kinetics while transmission electron microscopy enabled investigating local microstructure and film interfaces. These analyses have especially emphasized the predominant role of the as-deposited Ni metallic film microstructure (size and orientation of crystallites) on (ⅰ) oxidation kinetics, (ⅱ) NiO film microstructural characteristics (crystallite size, texture and interface roughness) and (ⅲ) subsequent electrical behavior. On this latter point, the as-grown NiO films were initially in the low resistance ON state without the electro-forming step usually required for sputtered films. Above the threshold voltage varying from 2 to 5 V depending on oxidation conditions, the Pt/NiO/Ni MRM structures irreversibly switched into the high resistance OFF state. This irreversibility is thought to originate in the microstructure of the NiO films that would cause the difficulty to re-form conductive paths.
机译：在许多金属/电阻氧化物/金属（MRM）结构中，已经报道了由外部电压控制的电阻切换，其中电阻氧化物是简单的过渡金属氧化物薄膜，例如通过反应溅射沉积的NiO或TiO_2。在本文中，我们探索了通过快速热退火路线由覆盖的镍金属膜的部分氧化形成基于NiO的MRM结构的可能性，其余的Ni层用作底部电极。 X射线衍射用于了解镍的氧化动力学，而透射电子显微镜能够研究局部的微观结构和膜界面。这些分析特别强调了沉积的Ni金属膜微结构（微晶的尺寸和取向）对（ⅰ）氧化动力学，（ⅱ）NiO膜微结构特征（微晶尺寸，织构和界面粗糙度）和（ⅲ ）随后的电气行为。在后一点上，所生长的NiO膜最初处于低电阻导通状态，而无需溅射膜通常需要的电形成步骤。在超过2-5 V的阈值电压（取决于氧化条件）之后，Pt / NiO / Ni MRM结构不可逆地切换到高电阻OFF状态。人们认为这种不可逆性源于NiO膜的微观结构，这将导致难以重新形成导电路径。

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  • 来源
    《Thin Solid Films》 |2008年第12期|4083-4092|共10页
  • 作者

    L. Courtade; Ch. Turquat; Ch. Muller; J.G. Lisoni; L. Goux; D.J. Wouters; D. Goguenheim; P. Roussel; L. Ortega;

  • 作者单位

    L2MP, Laboratoire Materiaux et Microelectronique de Provence, UMR CNRS 6137, Universite du Sud Toulon Var, BP 20132, F-83957La Garde Cedex, France;

    L2MP, Laboratoire Materiaux et Microelectronique de Provence, UMR CNRS 6137, Universite du Sud Toulon Var, BP 20132, F-83957La Garde Cedex, France;

    L2MP, Laboratoire Materiaux et Microelectronique de Provence, UMR CNRS 6137, Universite du Sud Toulon Var, BP 20132, F-83957La Garde Cedex, France;

    IMEC, Interuniversity MicroElectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC, Interuniversity MicroElectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC, Interuniversity MicroElectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium;

    L2MP, Laboratoire Materiaux et Microelectronique de Provence, UMR CNRS 6137, ISEN-Toulon, Maison des Technologies, Place Georges Pompidou, F-83000 Toulon, France;

    UCCS, Unite de Catalyse et Chimie du Solide, UMR CNRS 8181, ENSCL, BP 90108, F-59652 Villeneuve d'Ascq, France;

    Laboratoire de Cristallographie, UPR CNRS 5031, BP 166, F-38042 Grenoble Cedex 9, France;

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  • 正文语种 eng
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  • 关键词

    oxidation kinetics; resistive switching; bi-stable oxide films; microstructural analysis;

    机译：氧化动力学;电阻切换双稳态氧化膜;微观结构分析;

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