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Growth and characterization of aluminum nitride coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering

机译：脉冲直流无功磁控溅射法制备氮化铝涂层的生长与表征

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摘要

Approximately 2.2 urn thick aluminum nitride (A1N) thin films were deposited on silicon and glass substrates using a reactive direct current (DC) unbalanced magnetron sputtering system. Two asymmetric bipolar-pulsed DC generators were used to sputter the aluminum targets in Ar+ N_2 plasma. The A1N coatings were deposited at different substrate bias voltages, substrate temperatures and nitrogen flow rates. The coatings were characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy, ellipsometry and nanoindentation techniques. Peaks corresponding to (100), (002), (101) and (102) planes of hexagonal A1N were observed in the XRD data, indicating polycrystalline nature of the A1N coatings. The Raman data showed broad peaks corresponding to E_2 and A_1 (transverse optic) modes of hexagonal A1N. The N 1s and the Al 2p_(2/3) XPS spectra confirmed the formation of A1N phase. The A1N coating deposited under the optimized process conditions exhibited an average nanoindentation hardness of 12 GPa and an elastic modulus of 225 GPa. The refractive index of the A1N coating was found to be in the range 1.94-2.11 in the wavelength region of 300-1200 nm and the extinction coefficient was almost zero throughout the wavelength range.
机译：使用反应性直流（DC）不平衡磁控溅射系统在硅和玻璃基板上沉积约2.2微米厚的氮化铝（A1N）薄膜。使用两个非对称双极脉冲直流发生器将铝靶溅射到Ar + N_2等离子体中。在不同的衬底偏压，衬底温度和氮气流速下沉积AlN涂层。使用X射线衍射（XRD），微拉曼光谱，X射线光电子能谱（XPS），原子力显微镜，椭圆光度法和纳米压痕技术对涂层进行表征。在XRD数据中观察到对应于六角形AlN的（100），（002），（101）和（102）平面的峰，表明AlNN涂层的多晶性质。拉曼数据显示对应于六角形A1N的E_2和A_1（横向光学）模式的宽峰。 N 1s和Al 2p_（2/3）XPS光谱证实了AlN相的形成。在最佳工艺条件下沉积的AlN涂层表现出的平均纳米压痕硬度为12 GPa，弹性模量为225 GPa。发现AlN涂层的折射率在300-1200nm的波长范围内在1.94-2.11的范围内，并且消光系数在整个波长范围内几乎为零。

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