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首页> 外文期刊>Thin Solid Films >Corrigendum to 'Morphology and microstructure of textured SnO_2 thin films obtained by spray pyrolysis and their effect on electrical and optical properties' [Thin Solid Films 516 (2008) 1104-1111]
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Corrigendum to 'Morphology and microstructure of textured SnO_2 thin films obtained by spray pyrolysis and their effect on electrical and optical properties' [Thin Solid Films 516 (2008) 1104-1111]

机译：“通过喷雾热解获得的织构化SnO_2薄膜的形态和微观结构及其对电学和光学性质的影响”更正[薄膜固体膜516（2008）1104-1111]

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摘要

The author regrets that during the publication of this paper a portion of Section 3.4 was printed in error. The corrected Section 3.4 is reproduced below.rnExperimental transmission spectra in the range of 300 to 1100 nm for the 8 films are presented in Fig. 7. In all cases clear interference patterns are observed in the transparency region (500-1100 nm) with an average transmission of approximately 80%. From the position of the interference maxima and minima we found the material refractive index. The estimated value is around 2, in good agreement with the literature and with our transmission data (the reflection losses calculated from Fresnel formula, are of approximately 20% of the incident light). As usual, refractive index slightly decreases with an increase of wavelength.
机译：作者感到遗憾的是，在本文发表期间，第3.4节的一部分印刷有误。校正后的3.4节复制如下。rn图8显示了8层膜在300到1100 nm范围内的实验透射光谱。在所有情况下，在透明区域（500-1100 nm）都观察到清晰的干涉图样，并且平均传输率约为80％。从最大和最小干涉的位置，我们发现了材料的折射率。估计值约为2，与文献和我们的透射数据非常吻合（根据菲涅耳公式计算出的反射损耗约为入射光的20％）。通常，折射率随波长的增加而略有降低。

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  • 来源
    《Thin Solid Films》 |2008年第12期|4293-4294|共2页
  • 作者

    F. Paraguay-Delgado; M. Miki-Yoshida; W. Antunez; J. Gonzalez-Hernandez; Y.V. Vorobiev; E. Prokhorov;

  • 作者单位

    Centro de Investigation en Materiales Avanzados S. C, Departamento de Fisica de materials, Av. Miguel de Cervantes 120, Complejo Industrial Chihuahua, CP 31109 Chihuahua. Chih., Mexico;

    Centro de Investigation en Materiales Avanzados S. C, Departamento de Fisica de materials, Av. Miguel de Cervantes 120, Complejo Industrial Chihuahua, CP 31109 Chihuahua. Chih., Mexico;

    Centro de Investigation en Materiales Avanzados S. C, Departamento de Fisica de materials, Av. Miguel de Cervantes 120, Complejo Industrial Chihuahua, CP 31109 Chihuahua. Chih., Mexico;

    Centro de Investigation en Materiales Avanzados S. C, Departamento de Fisica de materials, Av. Miguel de Cervantes 120, Complejo Industrial Chihuahua, CP 31109 Chihuahua. Chih., Mexico;

    Unidad Queretaro del CINVESTAV-IPN, Libramiento Nor-poniente 2000, Queretaro 76230, QRO., Mexico;

    Unidad Queretaro del CINVESTAV-IPN, Libramiento Nor-poniente 2000, Queretaro 76230, QRO., Mexico;

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