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首页> 外文期刊>Thin Solid Films >Fabrication Of Zno And Cucro_2:mg Thin Films By Pulsed Laser Deposition With In Situ Laser Annealing And Its Application To Oxide Diodes
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Fabrication Of Zno And Cucro_2:mg Thin Films By Pulsed Laser Deposition With In Situ Laser Annealing And Its Application To Oxide Diodes

机译：原位激光退火脉冲激光沉积制备Zno和Cucro_2：mg薄膜及其在氧化二极管中的应用

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摘要

In situ laser annealing used in pulsed laser deposition of ZnO and Mg-doped CuCrO_2 transparent semiconductor films was shown to be effective in improving their electrical and crystalline properties. The X-ray diffraction analyses and electrical measurements of the film samples deposited on glass substrates revealed that the laser irradiation of films at an energy of approximately 30 mJ/cm~2 at 266 nm with a repetition frequency of 20 Hz and pulse duration of 20 ns during the deposition resulted in electrical characteristics that were similar to those obtained in the case of depositions with substrate heating. The pulsed laser deposition technique for ZnO and CuCrO_2:Mg semiconductor films was expanded with the assistance of in situ laser annealing to form multilayer structures intended for transparent p-n heterojunctions. Consequently, we fabricated a p-n junction in the structure of p-CuCrO_2:Mg-ZnO~+-ZnO on a glass substrate at room temperature. The resulting junction exhibited rectifying current-voltage characteristics and the multilayer thin films used to form the p-n junction exhibited an optical transparency of 70% in the visible region with a thickness of 0.4 μm.
机译：ZnO和掺Mg的CuCrO_2透明半导体膜的脉冲激光沉积中使用的原位激光退火已显示出可有效改善其电和晶体性能。 X射线衍射分析和对沉积在玻璃基板上的薄膜样品的电学测量表明，在266 nm下以约30 mJ / cm〜2的能量对薄膜进行激光辐照，重复频率为20 Hz，脉冲持续时间为20沉积过程中的ns所导致的电特性与在通过衬底加热进行沉积的情况下获得的电特性相似。借助原位激光退火技术，扩展了用于ZnO和CuCrO_2：Mg半导体膜的脉冲激光沉积技术，以形成用于透明p-n异质结的多层结构。因此，我们在室温下在玻璃基板上以p-CuCrO_2：Mg / n-ZnO / n〜+ -ZnO的结构制造了p-n结。所得结呈现出整流电流-电压特性，并且用于形成p-n结的多层薄膜在可见光区域中具有0.4％的厚度的70％的光学透明性。

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