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Low Temperature Growth Of Manganese Cobalt Nickelate Films By Chemical Deposition

机译:化学沉积法低温生长锰酸镍钴薄膜

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摘要

Manganese cobalt nickelate films (Mn_xCo_yNi_(3-x-y))O_4 (MCN) were prepared by chemical deposition method at a crystallization temperature of 600 ℃, which is lower than the usual sintering temperature of ~1050-1200 ℃. The grain size of the MCN films increased from 20 to 60 nm with the annealing temperature increased from 600 ℃ to 900 ℃. The secondary ion mass spectroscopy (SIMS) shows that elements of Mn, Co, Ni in the films were distributed homogenuously and that the diffusion of Si at the interface was negligeable. The infrared optical constants of the MCN thin films were determined using infrared spectroscopic ellipsometry.
机译:采用化学沉积法在600℃的结晶温度下制备了镍钴酸锰薄膜(Mn_xCo_yNi_(3-x-y))O_4(MCN),该温度低于通常的〜1050-1200℃的烧结温度。随着退火温度从600℃增加到900℃,MCN薄膜的晶粒尺寸从20 nm增加到60 nm。二次离子质谱(SIMS)表明,薄膜中的Mn,Co,Ni元素分布均匀,界面处Si的扩散可忽略不计。 MCN薄膜的红外光学常数使用红外光谱椭偏法测定。

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