Electrodeposition Of Cu-in-ga Thin Metal Films For Cu(in, Ga)se_2based Solar Cells

J. Kois; M. Ganchev; M. Kaelin; S. Bereznev; E. Tzvetkova; O. Volobujeva; N. Stratieva; A.N. Tiwari

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Electrodeposition Of Cu-in-ga Thin Metal Films For Cu(in, Ga)se_2based Solar Cells

机译：Cu（in，Ga）se_2基太阳能电池的Cu-in-ga薄膜的电沉积

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Cu-In-Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Ga-content is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 ℃ in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se_2 films are discussed.

机译：分级组成的Cu-In-Ga（CIG）层是通过一步法电沉积由硫氰酸盐络合物电解质制成的。通过改变搅拌速率，沉积时间和溶液组成，将Ga含量从2原子％调节至30原子％。所制备的CIG前体在不同的Se蒸气压力下于两温区炉中在500℃下硒化。讨论了硒蒸气压力对Cu（In，Ga）Se_2薄膜的形貌和光致发光性能的影响。

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来源
《Thin Solid Films》 |2008年第18期|p.5948-5952|共5页
作者
J. Kois; M. Ganchev; M. Kaelin; S. Bereznev; E. Tzvetkova; O. Volobujeva; N. Stratieva; A.N. Tiwari;
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作者单位

Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia;

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正文语种 eng
中图分类工程材料学;
关键词
electrochemistry; depth profiling; copper-indium-selenides; solar cells;

机译：电化学;深度分析;硒化铜铟;太阳能电池;

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1. Tuning the gallium content of metal precursors for Cu(In,Ga)Se2 thin film solar cells by electrodeposition from a deep eutectic solvent [J] . Joao C. Malaquias, David Regesch, Phillip J. Dale Physical chemistry chemical physics: PCCP . 2014,第6期

机译：通过电沉积从深共晶溶剂通过电沉积调节Cu（In，Ga）Se2薄膜太阳能电池的金属前体的镓含量
2. Two-step Selenization of Cu-In-Ga Precursors for CIGS Thin-film Solar Cellsby Using a Se Cracker [J] . Ho-Sub LEE, Nae-Man PARK, Kyu-Seok LEE, Journal of the Korean Physical Society . 2012,第10期

机译：利用硒裂化剂对CIGS薄膜太阳能电池的Cu-In-Ga前驱体进行两步硒化
3. One-step Electrodeposition of Metal Precursors from a Deep Eutectic Solvent for Cu(In, Ga)Se-2 Thin Film Solar Cells [J] . Malaquias Joao C., Steichen Marc, Dale Phillip J. Electrochimica Acta . 2015,第Null期

机译：用于Cu（In，Ga）Se-2薄膜太阳能电池的深共晶溶剂的一步法电沉积金属前体
4. Electrodeposition of Cu-In-Ga films for the preparation of CIGS solar cells [C] . Aksu Serdar, Pinarbasi Mustafa 35th IEEE Photovoltaic Specialists Conference . 2010

机译：Cu-In-Ga膜的电沉积制备CIGS太阳能电池
5. Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells [D] . Xin, Peipei. 2017

机译：Cu（In，Ga）Se2薄膜太阳能电池中的替代缓冲层开发
6. Controllable Multinary Alloy Electrodeposition for Thin-Film Solar Cell Fabrication: A Case Study of Kesterite Cu2ZnSnS4 [O] . Jie Ge, Yanfa Yan 2018

机译：用于薄膜太阳能电池制造的可控多元合金电沉积：以Kesterite Cu2ZnSnS4为例
7. Tuning the gallium content of metal precursors for Cu(In, Ga)Se-2 thin film solar cells by electrodeposition from a deep eutectic solvent [O] . Malaquias João, Regesch David, Dale Phillip J, 2014

机译：通过深共熔溶剂中的电沉积来调节Cu（In，Ga）Se-2薄膜太阳能电池的金属前驱体的镓含量

Electrodeposition Of Cu-in-ga Thin Metal Films For Cu(in, Ga)se_2based Solar Cells

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