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首页> 外文期刊>Thin Solid Films >Nanostructured thin films for multiband-gap silicon triple junction solar cells
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Nanostructured thin films for multiband-gap silicon triple junction solar cells

机译：用于多带隙硅三结太阳能电池的纳米结构薄膜

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摘要

By implementing nanostructure in multiband-gap proto-Si/proto-SiGec-Si:H triple junction n-i-p solar cells, a considerable improvement in performance has been achieved. The unalloyed active layers in the top and bottom cell of these triple junction cells are deposited by Hot-Wire CVD. A significant current enhancement is obtained by using textured Ag/ZnO back contacts instead of plain stainless steel. We studied the correlation between the integrated current density in the long-wavelength range (650-1000 nm) with the back reflector surface roughness and clarified that the rms roughness from 2D AFM images correlates well with the long-wavelength response of the cell when weighted with a Power Spectral Density function. For single junction 2-μm thick nc-Si:H n-i-p cells we improved the J_(sc) from 15.2 mA/cm~2 for plain stainless steel to 23.4 mA/cm~2 using rough back reflector. We introduced profiling of the H_2 dilution during growth of the nc-Si:H layer to prevent a transition to amorphous growth. The efficiency for a single junction n-i-p cell reached 8.5%, the highest reported value for HWCVD cells of this kind. Moreover, these cells show to be totally stable under light-soaking tests. Combining the above techniques, an efficiency of 10.9% has been obtained for triple junction cells (J_(sc)=8.35 mA/cm~2, V_(oc)= 1.98 V, FF=0.661). By using effective light trapping techniques and three different band-gap materials, the required thickness could be kept small (～2.5 μm total).
机译：通过在多带隙原始Si /原始SiGe / nc-Si：H三结n-i-p太阳能电池中实现纳米结构，可以实现性能的显着提高。这些三结电池的顶部和底部电池中的非合金有源层通过热线CVD沉积。通过使用带纹理的Ag / ZnO背触点代替普通不锈钢，可以显着提高电流。我们研究了长波长范围（650-1000 nm）中的积分电流密度与后反射器表面粗糙度之间的相关性，并阐明了加权后2D AFM图像的均方根粗糙度与电池的长波长响应密切相关具有功率谱密度功能。对于单结2μm厚的nc-Si：H n-i-p电池，我们使用粗糙的反光镜将J_（sc）从普通不锈钢的15.2 mA / cm〜2提高到23.4 mA / cm〜2。我们介绍了在nc-Si：H层生长过程中对H_2稀释液的分析，以防止过渡到无定形生长。单结n-i-p电池的效率达到8.5％，是此类HWCVD电池的最高报道值。而且，这些电池在光浸测试中显示出完全稳定。结合以上技术，对于三结电池（J_（sc）= 8.35 mA / cm〜2，V_（oc）= 1.98 V，FF = 0.661），效率达到了10.9％。通过使用有效的光捕获技术和三种不同的带隙材料，可以将所需的厚度保持很小（总计约2.5μm）。

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