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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Nanostructured thin films for multibandgap silicon triple junction solar cells
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Nanostructured thin films for multibandgap silicon triple junction solar cells

机译：用于多带隙硅三结太阳能电池的纳米结构薄膜

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摘要

A considerable improvement in performance has been achieved for multibandgap proto-Si/proto-SiGec-Si:H triple junction n-i-p solar cells in which hot-wire chemical vapor deposition (HWCVD) is used to obtain the absorber layers of the bottom and the top cell. To achieve this, optimized Ag/ZnO layers are prepared in house with respect to rms roughness and morphology. Apart from optimizing the light scattering from this back reflector, we found that it is important to control the morphology of surfaces to avoid cavities and shunting paths. A further drawback of such rough metallic surfaces is the parasitic absorption due to surface particle plasmons. Nevertheless, optimized back reflectors lead to an enhancement of the photocurrent of as much as 50%. The stable efficiency for a single junction n-i-p cell with optimized back reflector reached 8.6%, which is the highest reported value for n-i-p cells with HWCVD nc-Si:H i-layer. The triple junction cells of 2.5-mu m thickness, using silicon germanium (1.5 eV) in the middle cell, have an efficiency of 11%. These cells are stable within 3.5% relative. By keeping all component cells very thin, these triple cells are almost insensitive to light-induced defects. The difference between the best single junction and triple junction n-i-p cells obtained so far in our laboratory and the reported best cells with plasma enhanced chemical vapor deposition (PECVD) i-layers can be mainly attributed to the differences in the rough substrates and to the use of rather thin i-layers.
机译：对于多带隙原硅/原硅锗/ nc-Si：H三结压区太阳能电池，其热能化学气相沉积（HWCVD）用于获得底部和底部的吸收层，从而实现了性能上的显着改善。顶部的单元格。为了实现这一点，就均方根粗糙度和形态而言，在室内准备了优化的Ag / ZnO层。除了优化从该后反射器散射的光之外，我们还发现控制表面的形态以避免空洞和分流路径很重要。这种粗糙的金属表面的另一个缺点是由于表面粒子等离激元引起的寄生吸收。然而，优化的背反射器可将光电流提高多达50％。具有优化后反射器的单结n-i-p电池的稳定效率达到8.6％，这是具有HWCVD nc-Si：H i层的n-i-p电池的最高报道值。厚度为2.5微米的三结电池在中间电池中使用硅锗（1.5 eV），效率为11％。这些电池相对稳定在3.5％以内。通过保持所有组成单元非常薄，这些三元组单元几乎对光诱导的缺陷不敏感。迄今为止，我们实验室中获得的最佳单结和三结nip单元与已报道的具有等离子增强化学气相沉积（PECVD）i层的最佳单元之间的差异主要归因于粗糙基板的差异以及使用方法相当薄的i层

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