...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering
【24h】

Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

机译：射频磁控溅射法对GZO膜覆盖的多孔硅进行光学和结构分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the production of porous silicon (PS) to optoelectronic application one of the most significant constrains is the surface defects passivation. In the present work we investigate, gallium-doped zinc oxide (GZO) thin films deposited by rf magnetron sputtering at room temperature on PS obtained with different etching times. The X-ray diffraction (XRD), Fourier transform infrared (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of GZO films coating on PS. Further, the XRD analysis suggests the formation of a good crystalline quality of the GZO films on PS. From AFM investigation we observe that the surface roughness increases after GZO film coating. The photoluminescence (PL) measurements on PS and GZO films deposited PS shows three emission peaks at around 1.9 eV (red-band), 2.78 eV (blue-band) and 3.2 eV (UV-band). PL enhancement in the blue and ultraviolet (UV) region has been achieved after GZO films deposition, which might be originated from a contribution of the near-band-edge recombination from GZO.
机译：在光电应用的多孔硅（PS）生产中，最重要的限制之一是表面缺陷钝化。在目前的工作中，我们研究了通过射频磁控溅射在室温下在PS上以不同的蚀刻时间获得的掺杂镓的氧化锌（GZO）薄膜。进行了X射线衍射（XRD），傅立叶变换红外（FTIR）和原子力显微镜（AFM）分析，以了解GZO膜涂层对PS的影响。此外，XRD分析表明在PS上形成了良好的GZO膜结晶质量。通过AFM调查，我们发现在GZO膜涂层后表面粗糙度增加。在PS和沉积的PS上的GZO膜上的光致发光（PL）测量显示三个发射峰分别位于1.9 eV（红带），2.78 eV（蓝带）和3.2 eV（紫外带）附近。在沉积GZO膜之后，蓝色和紫外线（UV）区域的PL增强已经实现，这可能源于GZO的近带边缘重组的贡献。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号