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Analysis of magnetron sputtered boron oxide films

机译:磁控溅射氧化硼薄膜的分析

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Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon-oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO_2 phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B_6O, HBO_2 crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.
机译:通过射频(rf)不平衡磁控溅射硼靶在具有不同组成的氩氧气体混合物中在硅衬底上生长氧化硼膜。显微分析表明,整个氧化硼薄膜是非晶态的。氧气/氩气流量比> 0.05制备的薄膜在非晶态氧化硼基质的局部区域形成了硼酸大晶体。这些微晶是不稳定的,在电子显微镜下,它们不断转变为立方HBO_2相,然后完全消失,留下了下面的非晶态氧化硼膜。分析表明,B_6O,HBO_2微晶和无定形氧化硼基质共存。傅立叶变换红外(FTIR)光谱揭示了BOH,BO,BOB和BH基团的光谱带。在低氧浓度下制备的薄膜的纳米硬度和弹性模量分别接近30和300 GPa。然而,这些参数随沉积条件而变化。

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