Ferroelectric field-effect transistor based on transparent oxides

Ilya Titkov; Igor Pronin; Lubov Delimova; Ivan Liniichuk; Igor Grekhov

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Ferroelectric field-effect transistor based on transparent oxides

机译：基于透明氧化物的铁电场效应晶体管

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摘要

We studied a Pb_χZr_(1-χ)TiO_3/SnO_2/Al_2O_3 heterostructure as a base for transparent ferroelectric field-effect transistor. Single-crystal SnO_2/Al_2O_3 epitaxial films with the electron mobility of 25 cm~2/V were grown by pulsed laser deposition using two YAG:Nd lasers. Depletion mode transistor Au/PZT/SnO_2/Al_2O_3 was produced by laser ablation and RF sputtering. All the samples demonstrate clockwise hysteresis of the source-drain characteristic. The energy distribution of traps at the PZT/SnO_2 interface was determined using a modified version of a transient current method. The effect of PZT intergrain boundaries on the retention time was taken into account for experimental data discussion.

机译：我们研究了Pb_χZr_（1-χ）TiO_3 / SnO_2 / Al_2O_3异质结构作为透明铁电场效应晶体管的基础。通过使用两个YAG：Nd激光器的脉冲激光沉积来生长具有25cm〜2 / V电子迁移率的单晶SnO_2 / Al_2O_3外延膜。通过激光烧蚀和RF溅射产生耗尽型晶体管Au / PZT / SnO_2 / Al_2O_3。所有样本均显示源漏特性的顺时针方向磁滞。使用改进版本的瞬态电流方法确定了PZT / SnO_2接口处陷阱的能量分布。实验数据讨论中考虑了PZT晶界边界对保留时间的影响。

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来源
《Thin Solid Films》 |2007年第24期|8748-8751|共4页
作者
Ilya Titkov; Igor Pronin; Lubov Delimova; Ivan Liniichuk; Igor Grekhov;
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作者单位

Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str, 194021 Saint-Petersburg, Russia;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
transparent ferroelectric field-effect transistor; single-crystal tin dioxide; clockwise hysteresis; intergrain boundaries;

机译：透明铁电场效应晶体管;单晶二氧化锡;顺时针方向磁滞;晶界;

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Ferroelectric field-effect transistor based on transparent oxides

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