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Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

机译：宽间隙层硫属硫化物半导体：材料，电子结构和光电特性

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摘要

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-typc layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials.
机译：将透明导电氧化物的材料设计概念应用于层状硫属元素化物，提出了几种p型和n-typc层状硫属元素化物作为宽禁带半导体，并研究了它们的基本光学和电学性质。层状硫属硫化物由离子氧化物层和共价硫属化物层组成，它们分别为这些材料带来宽间隙和导电性能。通过正/反向光发射光谱和能带计算检查了材料的电子结构。检查结果表明，这些材料比简单的宽间隙半导体具有更多的独特功能。即，层状硫属硫化物被认为是由氧化物和硫属化物层或嵌入氧化物基质中的2D硫属化物晶体/分子组成的极薄的量子阱。对阶梯状吸收边缘，大带隙能量和大激子结合能的观察表明，这些特征源自于这些层状材料中的二维态密度和量子尺寸效应。

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