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Wide-gap layered oxychalcogenide semiconductors: materials, electronic structures and optoelectronic properties.

机译：宽间隙层状硫族硫化物半导体：材料，电子结构和光电特性。

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摘要

Applying the concept of materials design for transparent conductive oxides to layeredoxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed aswide-gap semiconductors and examined their basic optical and electrical properties. The layeredoxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, whichbring wide-gap and conductive properties to these materials, respectively. The electronicstructures of the materials were examined by normal/inverse photoemission spectroscopy andenergy band calculations. The results of the examinations suggested that these materials possessunique features more than simple wide gap semiconductors. Namely, the layeredoxychalcogenides are considered to be extremely thin quantum wells composed of the oxide andchalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix.Observation of step-like absorption edges, large band gap energy and large exciton bindingenergy demonstrated these features originating from 2D density of states and quantum sizeeffects in these layered materials.
机译：将透明导电氧化物的材料设计概念应用于层状氧硫属化物，提出了几种p型和n型层状氧硫属化物作为宽间隙半导体，并研究了它们的基本光学和电学性质。层状硫属硫化物由离子氧化物层和共价硫属化物层组成，它们分别为这些材料带来了宽间隙和导电性能。通过正/反向光发射光谱和能带计算来检查材料的电子结构。检验结果表明，这些材料比简单的宽间隙半导体具有更多的独特特性。即，层状硫属硫化物被认为是由氧化物和硫属化物层或嵌入氧化物基体中的2D硫属化物晶体/分子组成的极薄量子阱，观察到阶梯状吸收边缘，大带隙能和大激子结合能证明了这些特征这些层状材料的2D状态密度和量子尺寸效应的影响。

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