...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Thin Solid Films >Correlation of optical and photoluminescence properties in amorphous SiN_x:H thin films deposited by PECVD or UVCVD
【24h】

Correlation of optical and photoluminescence properties in amorphous SiN_x:H thin films deposited by PECVD or UVCVD

机译：PECVD或UVCVD沉积的非晶SiN_x：H薄膜的光学和光致发光特性的相关性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hydrogenated silicon nitride SiN_x:H films are largely used as antireflective coating as well as passivation layer for industrial crystalline and multicrystalline silicon solar cells. This work is focused on the optical and photoluminescence (PL) properties of SiN_x:H deposited by either Plasma-Enhanced Chemical Vapour Deposition (PECVD) or Ultraviolet photo-assisted CVD (UVCVD). Photoluminescence phenomena were investigated in SiN_x:H having different stoechiometries. On the other hand, spectroscopic ellipsometry was carried out in order to obtain the optical properties of the films, from which the optical gap could be determined. The evolution of the photoluminescence with stoechiometry was correlated to the evolution of the optical properties, and especially the absorption within the SiN_x:H layer. A good agreement was found considering the confinement of excitons in strongly absorbing silicon nanostructures (ns-Si) formed in the SiN_x matrix, with different sizes according to the NH_3/SiH_4 gas flow ratio and the deposition technique. The main PL peak showed an increase of the emission intensity along with a blueshift as silicon concentration decreases. These observations indicate a radiative recombination mechanism dominated by confined excitons within ns-Si rather than emission related to defects. Furthermore, these ns-Si are supposed to be responsible of the global higher absorption, and hence lower optical gap, of the near-stoechiometric SiN_x:H films in comparison with the stoechiometric Si_3N_4 ones. These assumptions were confirmed thanks to transmission electron microscopy (TEM) images performed on one of the samples, showing crystalline silicon quantum dots (c-Si QDs) embedded in the SiN_x matrix.
机译：氢化氮化硅SiN_x：H膜主要用作工业晶体和多晶硅太阳能电池的抗反射涂层以及钝化层。这项工作集中于通过等离子体增强化学气相沉积（PECVD）或紫外光辅助CVD（UVCVD）沉积的SiN_x：H的光学和光致发光（PL）特性。在具有不同化学计量比的SiN_x：H中研究了光致发光现象。另一方面，为了获得膜的光学性质，进行了光谱椭圆偏振法，由此可以确定光学间隙。化学计量的光致发光演化与光学性质的演化有关，尤其是与SiN_x：H层内的吸收有关。根据NH_3 / SiH_4气体流量比和沉积技术，考虑到激子在SiN_x基质中形成的强吸收硅纳米结构（ns-Si）中的限制，发现了一个很好的协议。随着硅浓度的降低，主PL峰显示出发射强度的增加以及蓝移。这些观察表明，在ns-Si内，受约束激子控制的辐射复合机制，而不是与缺陷有关的发射。此外，与化学计量的Si_3N_4薄膜相比，这些ns-Si被认为是造成近化学计量的SiN_x：H薄膜的整体更高的吸收，从而导致更低的光学间隙的原因。这些假设得益于对样品之一进行的透射电子显微镜（TEM）图像，显示嵌入在SiN_x矩阵中的晶体硅量子点（c-Si QDs）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号