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首页> 外文期刊>Thin Solid Films >Photoluminescence, open circuit voltage, and photocurrents in Cu(In,Ga)Se_2 solar cells with lateral submicron resolution
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Photoluminescence, open circuit voltage, and photocurrents in Cu(In,Ga)Se_2 solar cells with lateral submicron resolution

机译：横向亚微米分辨率的Cu（In，Ga）Se_2太阳能电池的光致发光，开路电压和光电流

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摘要

Thin film Cu(In,Ga)Se_2 solar cells with average efficiencies in the 14% regime have been analyzed by photoluminescence (PL) with lateral micrometer-resolution. PL has been evaluated according to Planck's generalized law with respect to splitting of quasi-Fermi levels under open circuit (OC) and short circuit (SC). Lateral patterns of luminescence yields signalize local fluctuations in quasi-Fermi energies in the range of some tens of milli-electron-volt. These patterns spatially extend to some microns and by far exceed the size of individual grains of 1 μm or less. The responses of PL, and thus the local V_(OC) and short circuit currents turn out to be significantly anti-correlated. This behaviour is explained in terms of a two dimensional network coupling illuminated and dark hypothetic micrometer-sized diodes with different characteristic parameters such as series and parallel resistances, as well as reverse saturation currents.
机译：薄膜Cu（In，Ga）Se_2太阳能电池的平均效率在14％范围内，已通过具有横向微米分辨率的光致发光（PL）进行了分析。已根据普朗克的一般法对PL在开路（OC）和短路（SC）下分裂准费米能级进行了评估。发光产量的横向模式表明准费米能量的局部波动在几十毫伏的范围内。这些图案在空间上延伸到一些微米，远远超过了1微米或更小的单个晶粒的尺寸。 PL的响应，以及因此的局部V_（OC）和短路电流，被证明是明显反相关的。此行为是通过二维网络耦合的，该二维网络耦合了具有不同特征参数（例如串联电阻和并联电阻）以及反向饱和电流的发光和暗假设的微米级二极管。

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