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Improved performance of the single-layer and double-layer organic light emitting diodes by nickel oxide coated indium tin oxide anode

机译:氧化镍涂覆的铟锡氧化物阳极改善了单层和双层有机发光二极管的性能

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摘要

The electrical and optical properties of the NiO films deposited under various conditions were first characterized. An ultra-thin layer of nickel oxide (NiO) was then deposited on the indium-tin oxide (ITO) anode to enhance the hole injection in the organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with the ITO/NiO anode in the conventional double layer heterojunction OLEDs. The enhancement of hole injection by the ITO/NiO anode was further verified by the hole-only device and by the device with a patterned NiO layer on the ITO anode. The luminance and the current density of the single-layer OLED device were also significantly improved by using the ITO/NiO anode to enhance the hole injection. Although the luminescence efficiency was low, the reasons of low efficiency were studied and the improvement method was proposed. Our results suggest that the NiO/ITO anode is an excellent choice to enhance the hole injection in OLED devices.
机译:首先表征了在各种条件下沉积的NiO薄膜的电学和光学性质。然后将氧化镍(NiO)的超薄层沉积在铟锡氧化物(ITO)阳极上,以增强有机发光二极管(OLED)器件中的空穴注入。在传统的双层异质结OLED中,使用ITO / NiO阳极的器件实际上观察到非常低的开启电压(3 V)。 ITO / NiO阳极对空穴注入的增强作用已通过仅空穴的设备以及在ITO阳极上具有图案化NiO层的设备得到了进一步验证。通过使用ITO / NiO阳极来增强空穴注入,单层OLED器件的亮度和电流密度也得到了显着改善。尽管发光效率低,但是研究了效率低的原因并提出了改进方法。我们的结果表明,NiO / ITO阳极是增强OLED器件中空穴注入的绝佳选择。

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