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Effect of target compositions on the crystallinity of β-FeSi_2 prepared by ion beam sputter deposition method

机译：靶组成对离子束溅射沉积法制备β-FeSi_2结晶度的影响

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摘要

Targets with the elemental composition of Fe, Fe_2Si and FeSi_2 were employed in the present study to grow β-FeSi_2 film on Si (100) substrate by means of ion beam sputter deposition (IBSD) method. The results revealed that when FeSi_2 target was employed, a Si-rich phase, α-FeSi_2 (Fe_2Si_5), was predominant at temperatures above 973 K, while β-FeSi_2 phase was observed only in the limited temperature range at around 873 K. In this case, Si was originated both from the sputtered target and the substrate, thus, the supply of Si was considered to be excessive to sustain β structure. On the other hand, the films prepared with Fe target became polycrystalline as they grow thicker than 100 nm. In order to optimize the supply of Fe and Si for epitaxial growth, Fe_2Si target was employed, where highly (100)-priented β-FeSi_2 layer of 120 nm in thickness was obtained at 973 K.
机译：本研究采用元素组成为Fe，Fe_2Si和FeSi_2的靶材，通过离子束溅射沉积（IBSD）方法在Si（100）衬底上生长β-FeSi_2膜。结果表明，当使用FeSi_2靶时，富硅相α-FeSi_2（Fe_2Si_5）在973 K以上的温度下占主导，而β-FeSi_2相仅在873 K附近的有限温度范围内观察到。在这种情况下，Si既来自溅射靶又来自衬底，因此认为Si的供给过多以维持β结构。另一方面，用Fe靶制备的膜随着厚度增​​长超过100nm而变成多晶。为了优化外延生长所需的Fe和Si的供应，采用了Fe_2Si靶，在973 K处获得了厚度为120 nm的高度（100）优先的β-FeSi_2层。

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