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Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

机译:衬底温度和沉积厚度对离子束溅射沉积制备硅化铁的影响

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摘要

Ion beam sputter deposition (IBSD) method was employed to find optimum conditions for the formation of epitaxial β-FeSi_2 films on Si(100) substrate. It was found that crystal structure of the films as determined by X-ray diffraction (XRD) analysis is dependent on the substrate temperature as well as on the deposited thickness of sputtered Fe. The film with best crystal properties was obtained either at 873 K with the deposited Fe thickness of 15 nm, or at 973 K with the deposited Fe thickness of 30 nm. The obtained results indicate the importance of Fe and/or Si diffusion in determining the crystal properties of β-FeSi_2 film.
机译:离子束溅射沉积(IBSD)方法用于寻找在Si(100)衬底上形成外延β-FeSi_2薄膜的最佳条件。已经发现,通过X射线衍射(XRD)分析确定的膜的晶体结构取决于衬底温度以及溅射的Fe的沉积厚度。在873 K下沉积的Fe厚度为15 nm或在973 K下沉积的Fe厚度为30 nm时,可以获得具有最佳晶体性能的薄膜。所得结果表明Fe和/或Si扩散对确定β-FeSi_2膜的晶体性质的重要性。

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