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首页> 外文期刊>Thin Solid Films >Gas-phase chemistry and etching mechanism of SiN_x thin films in C_4F_8 + Ar inductively coupled plasma
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Gas-phase chemistry and etching mechanism of SiN_x thin films in C_4F_8 + Ar inductively coupled plasma

机译：C_4F_8 + AR电感耦合等离子体中SIN_X薄膜的气相化学和蚀刻机理

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摘要

In this study, we investigated the etching characteristics of non-stoichiometric SiNx thin films in C4F8 + Ar inductively coupled rf (13.56 MHz) plasma. The SiNx etching rates together with SiNx/Si and SiNx/SiO2 etching selectivities were measured as functions of the gas pressure (4-10 mTorr, or 0.53-1.33 Pa), input power (700-1000 W), bias power (100-400 W), and C4F8/Ar mixing ratio (0%-75% Ar). Data on internal plasma parameters and plasma chemistry as well as steady-state plasma composition were obtained by both Langmuir probe diagnostics and zero-dimensional plasma modeling. The etching mechanism of SiNx was analyzed through the relationship between the measured etching rates and model-predicted fluxes of active species (F atoms, CFx radicals, and positive ions). It was confirmed that within the given range of input process conditions, the SiNx etching process 1) appears in the steady-state etching regime, 2) exhibits the features of ion-assisted chemical reactions in the neutral-flux-limited mode, and 3) is influenced by the thickness of the fluorocarbon polymer film. It was shown that the influence of input process parameters on the effective probability of SiNx + F chemical reaction may be adequately characterized by the fluorocarbon radicals/fluorine atoms and fluorocarbon radicals/ion energy flux ratios.
机译：在这项研究中，我们研究了C4F8 + AR电感耦合RF（13.56MHz）等离子体中的非化学计量SINX薄膜的蚀刻特性。将SINX蚀刻速率与SINX / SI和SINX / SIO2蚀刻选择性一起测量为气体压力（4-10 mTorr，或0.53-1.33Pa），输入功率（700-1000 w），偏置功率（100- 400 W）和C4F8 / Ar混合比（0％-75％Ar）。通过Langmuir探针诊断和零尺寸等离子体建模，获得内部等离子体参数和血浆化学以及稳态等离子体组合物。通过测量的蚀刻速率与有源物质（F原子，CFX自由基和正离子的模型预测助熔剂之间的关系来分析SINX的蚀刻机制。确认，在给定的输入过程条件的给定范围内，SINX蚀刻过程1）出现在稳态蚀刻方案中，2）表现出中性通量限制模式下的离子辅助化学反应的特征，以及3 ）受氟碳聚合物膜的厚度的影响。结果表明，通过氟碳基的/氟原子和氟碳基/离子能量通量比例可以充分表征对Sinx + F化学反应有效概率的影响。

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