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Modeling and Simulation of Photoelectronic Lambda Bipolar Transistor

机译：光电λ双极晶体管的建模与仿真

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摘要

Based on the region model of lambda bipolar transistor (LBT), a dividing region theory model of PLBT is set up, simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor (PLBT) are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly, by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics.
机译：基于λ双极晶体管（LBT）的区域模型，建立，仿真和验证了PLBT的划分区域理论模型。首先，通过简单的电路模型来表征不同种类的光电λ双极晶体管（PLBT）的主要操作。通过等效电路的数学分析，典型特性曲线分为正电阻，峰值，负电阻和截止区域。其次，通过对该模型的分析和仿真，发现MOSFET的宽度与沟道长度之比，阈值电压和共发射极增益是决定PLBT特性曲线的主要结构参数。通过修改这些参数，可以根据实际需要方便地改变PLBT的峰宽，峰电流值，负电阻值和谷值电压值。最后对所制造器件的特性与仿真结果进行了比较，表明分析结果与所观察到的器件特性相吻合。

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