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Effect of BN, AlN and ZrN additives on the properties of semiconducting BaTiO_3

机译:BN,AlN和ZrN添加剂对半导体BaTiO_3性能的影响

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摘要

The physico-chemical properties of semiconducting Y-containing BaTiO_3 ceramics doped by BN, AlN and ZrN have been investigated using thermogravimetric measurements, X-ray diffraction analysis and electron microscopy. When specified additives were added, compounds are formed which affect redox reactions occurring during the synthesis of BaTiO_3 and alloy one to expand the temperature interval of ceramic reduction.
机译:利用热重测量,X射线衍射分析和电子显微镜研究了掺有BN,AlN和ZrN的含Y半导体BaTiO_3陶瓷的物理化学性质。当添加特定的添加剂时,会形成影响BaTiO_3和一种合金的合成过程中发生的氧化还原反应的化合物,从而扩大陶瓷还原的温度间隔。

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