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首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >Cooperating Virtual Memory and Write Buffer Management for Flash-Based Storage Systems
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Cooperating Virtual Memory and Write Buffer Management for Flash-Based Storage Systems

机译：基于闪存的存储系统的协作虚拟内存和写缓冲区管理

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摘要

Flash memory is becoming the preferred choice of secondary storage in mobile devices and embedded systems. The performance of Flash memory is dictated by asymmetric speeds of read and write, limited number of erase times, and the absence of in-place updates. To improve the performance of Flash-based storage systems, the write buffer has been provided in Flash memories recently. At the same time, new virtual memory management strategies have been proposed in recent studies that consider the characteristics of Flash memory. Currently, approaches on these two memory layers are considered separately, which fail to explore the full potential of these two layers. In this paper, we propose cooperative management schemes for virtual memory and write buffer to maximize the performance of Flash-memory-based systems. Management on virtual memory is designed to exploit write buffer status via reordering of the write sequences. The proposed write buffer management scheme works seamlessly with the proposed virtual memory management scheme. Experimental results show that significant improvement in I/O performance and reduction of the number of erase and write operations can be achieved compared to the state-of-art approaches.
机译：闪存已成为移动设备和嵌入式系统中辅助存储的首选选择。闪存的性能取决于读写速度的不对称，擦除时间的数量有限以及没有就地更新。为了提高基于闪存的存储系统的性能，最近在闪存中提供了写缓冲区。同时，最近的研究提出了新的虚拟内存管理策略，该策略考虑了闪存的特性。当前，在这两个存储层上的方法是分开考虑的，这些方法无法探索这两个层的全部潜力。在本文中，我们提出了虚拟内存和写缓冲区的协作管理方案，以最大程度地提高基于闪存的系统的性能。虚拟内存的管理旨在通过对写序列进行重新排序来利用写缓冲区的状态。拟议的写缓冲区管理方案与拟议的虚拟内存管理方案无缝地协同工作。实验结果表明，与现有技术相比，I / O性能得到了显着提高，擦除和写入操作的数量得以减少。

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