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Berkeley Symposium on Energy Efficient Electronic Systems
Berkeley Symposium on Energy Efficient Electronic Systems
召开年：
2015
召开地：
Berkeley, CA(US)
出版时间：
-
会议文集：
-
会议论文
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1.
Understanding negative capacitance dynamics in ferroelectric capacitors
机译：
了解铁电电容器中的负电容动力学
作者：
Khan Asif Islam
;
Chatterjee Korok
;
Ramesh Ramamoorthy
;
Salahuddin Sayeef
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
ferroelectric capacitors;
ferroelectric switching;
crystalline ferroelectric capacitor;
ferroelectric negative capacitance;
ferroelectric switching;
Capacitance;
Capacitors;
Iron;
Resistors;
Semiconductor device measurement;
Switches;
Transient analysis;
2.
Body-biased operation for improved MEM relay energy efficiency
机译：
偏置操作可提高MEM继电器的能效
作者：
Peschot Alexis
;
Chuang Qian
;
Connelly Daniel J.
;
Tsu-Jae King Liu
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS logic circuits;
MOSFET;
energy conservation;
integrated circuit design;
low-power electronics;
optimisation;
relays;
CMOS logic circuit;
IC design application;
body-biased operation;
complementary metal-oxide semiconductor logic circuit;
improved MEM relay energy efficiency;
mechanical switch;
minimally sized transistor;
optimization;
scaled logic relay technology;
signal propagation delay;
ultralow-power digital integrated-circuit application;
CMOS integrated circuits;
Delays;
Electrodes;
Logic gates;
Relays;
Switches;
3.
Defect and temperature dependence of tunneling in InGaAs/GaAsSb heterojunctions with varying band alignments
机译：
InGaAs / GaAsSb异质结中具有不同能带排列的隧穿的缺陷和温度依赖性
作者：
Iutzi Ryan
;
Heidelberger Christopher
;
Fitzgerald Eugene
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
III-V semiconductors;
approximation theory;
buffer layers;
gallium arsenide;
indium compounds;
tunnel transistors;
InAs-GaSb;
InGaAs-GaAsSb;
buffer layers;
conductance slope;
gate-oxide traps;
parasitic leakage pathways;
two-terminal measurements;
Heterojunctions;
Substrates;
Temperature dependence;
Temperature measurement;
Tunneling;
4.
Not faster nor slower tasks, but less energy hungry and parallel: Simulation results
机译：
既不快也不慢的任务，但是更少的能源消耗和并行：仿真结果
作者：
Xavier-de-Souza Samuel
;
Barros Carlos A.
;
Jales Marcio O.
;
Silveira Luiz F. Q.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
microprocessor chips;
multiprocessing systems;
power aware computing;
energy hungry;
instruction level parallelism;
multicore processors;
power wall;
processor generation;
single processing core;
task level parallelism;
thermal effect;
Energy measurement;
Multicore processing;
Power measurement;
Program processors;
Time measurement;
Time-frequency analysis;
5.
Sub-5 nm gap formation for low power NEM switches
机译：
低功率NEM开关的亚5纳米间隙形成
作者：
Ji Cao
;
Ling Li
;
Kato Kimihiko
;
Tsu-Jae King Liu
;
Wong H.-S Philip
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS integrated circuits;
low-power electronics;
microelectrodes;
microswitches;
nanoelectromechanical devices;
thin films;
CMOS-compatible technique;
beam release;
brick element model;
contact gap;
coventor MEMS+ software;
freely suspended cantilever;
gap size;
gate-drain electrodes;
lateral NEM switches;
low power NEM switches;
nanoelectromechanical switches;
sacrificial material;
single-pole double-throw configuration;
size 0.25 mum;
size 1 mum;
size 1 nm to 40 nm;
size 50 mum;
thin film-2D materials;
top-down pattern-and-etch approach;
ultra-low power applications;
ultra-small air gaps;
ultra-small gap formation;
zero-crowbar-current circuits;
zero-leakage circuits;
Air gaps;
Aluminum oxide;
Etching;
Fabrication;
Graphene;
Milling;
Switches;
6.
Van der Waals heterostructures for tunnel transistors
机译：
隧道晶体管的Van der Waals异质结构
作者：
Roy T.
;
Tosun M.
;
Amani M.
;
Lien D.-H.
;
Kiriya D.
;
Zhao P.
;
Desai S.
;
Sachid A.
;
Madhvapathy S.R.
;
Javey A.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
insulated gate field effect transistors;
molybdenum compounds;
tungsten compounds;
tunnelling;
2D materials;
Van der Waals heterostructure;
WSesub2/sub-MoSsub2/sub;
layered semiconductors;
tunnel transistors;
van der Waals gap;
vertical heterojunction depletion;
vertical quantum confinement;
Chemicals;
Couplings;
Heterojunctions;
Metals;
Tunneling;
7.
What the brain tells us about the future of silicon
机译：
大脑告诉我们关于硅的未来的事情
作者：
Hawkins Jeff
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
elemental semiconductors;
neural chips;
silicon;
Moore's law;
Si;
artificial neural networks;
fault tolerance;
neuromorphic hardware;
power efficiency;
storage density;
von-Neumann architectures;
Artificial neural networks;
Brain models;
Computer architecture;
Neuromorphics;
Neurons;
8.
Operating micromechanical logic gates below k
B
T: Physical vs logical reversibility
机译：
在k
B T以下运行微机械逻辑门：物理与逻辑可逆性
作者：
Lopez-Suarez M.
;
Neri I.
;
Gammaitoni L.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
cantilevers;
logic gates;
micromechanical devices;
Landauer theory;
MEMS cantilever;
electrostatic probe;
future computing device;
logic AND gate implementation;
logic OR gate implementation;
logic gates;
logic switch;
logical reversibility;
logical states;
logically irreversible operation;
micromechanical logic gate operation;
physical reversibility;
transistor dimension scaling;
Heating;
History;
Logic gates;
Micromechanical devices;
Performance evaluation;
Production;
Thermodynamics;
9.
2D tunnel transistors for ultra-low power applications: Promises and challenges
机译：
超低功耗应用的2D隧道晶体管：前景与挑战
作者：
Ilatikhameneh Hesameddin
;
Klimeck Gerhard
;
Rahman Rajib
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
electric fields;
transition metals;
tunnel transistors;
tunnelling;
2D TFET;
2D tunnel transistors;
TMD;
WTesub2/sub;
electric field;
gate control;
low-power electronics;
subthreshold swing device;
transition metal dichalcogenide;
tunnel field-effect transistors;
tunnel junction;
ultralow power applications;
voltage 0.25 V;
voltage 0.5 V;
Doping;
Logic gates;
Low-power electronics;
Quantum capacitance;
10.
Anomalous properties of sub-10-nm magnetic tunneling junctions
机译：
低于10 nm的磁性隧穿结的异常性质
作者：
Stone Mark
;
Jeongmin Hong
;
Hadjikhani Ali
;
Guduru Rakesh
;
Manoussakis Adam
;
Stimphil Emmanuel
;
Luongo Kevin
;
Ping Liang
;
Safonov Vladimir
;
Bokor Jeffrey
;
Khizroev Sakhrat
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
current density;
magnetic logic;
magnetic tunnelling;
radiation hardening (electronics);
3D integration capability;
STT effect;
STT magnetic tunneling junctions;
STT-MTJ devices;
information processing;
information states;
junction size dependence;
magnetic logic devices;
magnetic states;
magnetic tunneling junctions;
main stumbling block;
nanomagnetic application;
nanomagnetic devices;
nonvolatility;
radiation hardness;
semiconductor counterparts;
size 10 nm;
spin damping;
spin excitation;
spin switching current;
spin-based nanodevices;
spin-polarized electric current;
spin-transfer torque;
switching current density;
thermal reservoir;
three-dimensional integration capability;
Current density;
Damping;
Junctions;
Magnetic multilayers;
Magnetic tunneling;
Switches;
11.
Ambient temperature optimization for enterprise servers: Key to large-scale energy savings
机译：
企业服务器的环境温度优化：大规模节能的关键
作者：
Vaidyanathan Kalyan
;
Gross Kenny
;
Sondur Sanjeev
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
computer facilities;
energy conservation;
file servers;
power aware computing;
IT server;
IT systems;
air conditioning;
ambient temperature optimization;
computer industry;
energy efficiency;
enterprise computing servers;
extensive oracle research;
iEADC algorithms;
intelligent energy aware data center algorithms;
intelligent optimization;
large-scale energy savings;
nonobservable energy wastage mechanisms;
optimal ambient temperature set point;
oracle temperature-aware algorithms;
storage systems;
strongly-coupled temperature-accelerated wastage mechanisms;
Air conditioning;
Artificial intelligence;
Energy efficiency;
Optimization;
Servers;
Temperature distribution;
Vibrations;
12.
Challenges of fulfilling the promise of tunnel FETs
机译：
兑现隧道FET承诺的挑战
作者：
Datta S.
;
Pandey R.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
III-V semiconductors;
electric current measurement;
field effect transistors;
numerical analysis;
tunnel transistors;
voltage measurement;
III-V HTFET;
III-V heterojunction tunnel FET;
current-voltage measurements;
steep switching;
voltage 0.5 V;
Field effect transistors;
Integrated circuit modeling;
Junctions;
Logic gates;
Switches;
Temperature dependence;
Temperature measurement;
13.
An ultra-low-power low-noise amplifier in 45nm SOI CMOS for portable EEG applications
机译：
适用于便携式EEG应用的45nm SOI CMOS超低功耗低噪声放大器
作者：
Gadfort Peter
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS analogue integrated circuits;
biomedical electronics;
electroencephalography;
low noise amplifiers;
low-power electronics;
DARPA DAHI program;
IBM CMOS;
Northrup Grumman TF4 InP;
SOI CMOS;
deployable EEG system;
portable EEG applications;
power 340 nW;
size 45 nm;
systems battery;
ultra-low-power low-noise amplifier;
voltage 1.05 muV;
1f noise;
CMOS integrated circuits;
Choppers (circuits);
Electroencephalography;
Gain;
Low-noise amplifiers;
Transistors;
14.
Electric-field-controlled MRAM based on voltage control of magnetic anisotropy (VCMA): Recent progress and perspectives
机译：
基于磁各向异性（VCMA）电压控制的电场控制MRAM：最新进展和展望
作者：
Khalili Pedram
;
Kang Wang
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
MRAM devices;
logic circuits;
magnetic anisotropy;
magnetisation;
voltage control;
STT;
VCMA;
electric-field-controlled MRAM;
logic circuit;
magnetic anisotropy;
magnetization control;
magnetization switching mechanism;
magnetoresistive random access memory;
nanostructure;
spin transfer torque;
spin-orbit torque;
strain-mediated magnetoelectric coupling;
ultralow-power high-density memory;
voltage control;
Junctions;
Magnetic anisotropy;
Magnetic tunneling;
Magnetization;
Random access memory;
Switches;
15.
Electrically injected nanoLED with large spontaneous emission enhancement from an optical antenna
机译：
电注入的nanoLED具有自发的光学天线增强的自发发射能力
作者：
Fortuna Seth A.
;
Eggleston Michael S.
;
Messer Kevin
;
Yablonovitch Eli
;
Wu Ming C.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
light emitting diodes;
metamaterial antennas;
nanoelectronics;
nanophotonics;
slot antennas;
cavity-backed optical slot antenna;
electrically injected nanoLED device;
nanoscale light source;
on-chip optical interconnects;
spontaneous emission rate enhancement;
Dipole antennas;
Light emitting diodes;
Nanoscale devices;
Slot antennas;
Spontaneous emission;
Stimulated emission;
16.
Electromechanically actuating molecules
机译：
机电致动分子
作者：
Wen Jie Ong
;
Sletten Ellen M.
;
Niroui Farnaz
;
Lang Jeffrey H.
;
Bulovic Vladimir
;
Swager Timothy M.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
electromechanical actuators;
low-power electronics;
microelectrodes;
microswitches;
nanoactuators;
NEM switch;
applied electrostatic force;
conductive contacts;
device failure;
electrical stimuli;
electrodes;
electromechanical modulation;
electromechanically actuating molecules;
force control;
low powered electronics;
molecular layer compression;
nanoelectromechanical switch;
nanometer-thick organic molecular layer;
nanoscale switching gaps;
next generation devices;
organic materials;
organic synthesis;
sub-nanoscale structures;
surface adhesion minimization;
tunneling current;
tunneling distance;
tunneling gap;
Nanoscale devices;
Oxidation;
Plastics;
Shape;
Stationary state;
Switches;
Tunneling;
17.
From microelectromechanical switches to nanoelectromechanical switches: Lessons and differences
机译：
从微机电开关到纳米机电开关：教训和差异
作者：
Jun-Bo Yoon
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
cantilevers;
electrostatic actuators;
microswitches;
nanoelectromechanical devices;
MEM switch;
NEM IC;
NEM switches;
actuation voltage;
electromechanical contact;
electrostatically actuated cantilever;
ideal zero leakage characteristic;
low power consumption;
microelectromechanical switches;
nanoelectromechanical switches;
nanotechnology-based approaches;
nearly infinite sub-threshold slope;
on-off current ratio;
switch endurance problems;
Contacts;
Electrical engineering;
Electronic mail;
Integrated circuits;
Power demand;
Switches;
Transistors;
18.
From nanodevices to nanosystems: The N3XT information technology
机译：
从纳米设备到纳米系统：N3XT信息技术
作者：
Mitra Subhasish
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
Computer science;
Electrical engineering;
Energy efficiency;
Information technology;
Memory management;
Nanoscale devices;
19.
Novel device functionalities enabled by substitutional doping against native propensity in 2D semiconductors
机译：
通过针对2D半导体中的固有倾向进行替代掺杂而实现的新型器件功能
作者：
Joonki Suh
;
Saha Bivas
;
Junqiao Wu
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
Hall effect;
X-ray absorption spectra;
current density;
energy consumption;
hole density;
magnetoelectronics;
molybdenum compounds;
niobium;
optoelectronic devices;
p-n junctions;
semiconductor doping;
transition metals;
2D semiconductor;
Hall-effect measurement;
MoSsub2/sub:Nb;
TMD;
X-ray absorption spectra;
bipolar conduction;
chemical doping;
current density;
device functionality;
electronic device;
energy consumption;
hole density;
n-doped pristine molybdenum disulfide;
native propensity;
niobium;
optoelectronic device;
p-type conduction;
p-type doping;
spintronic device;
substitutional doping;
transition metal dichalcogenide;
tunable carrier density;
tuneable junction rectification;
vertically stacked p-n junction;
Doping;
Energy consumption;
Energy efficiency;
Junctions;
Logic gates;
Niobium;
20.
An improved unipolar CMOS with elevated body and spacer for low-power application
机译：
改进的单极性CMOS器件，带有高架和隔离片，适用于低功耗应用
作者：
Wei-Han Lee
;
Jyi-Tsong Lin
;
Kai-Cheng Juang
;
Ting-Chung Chang
;
Chih-Kai Huang
;
Chien-Chia Lai
;
Bo-Cheng Yan
;
Yong-Huang Lin
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS logic circuits;
MOSFET;
SRAM chips;
logic gates;
low-power electronics;
oscillators;
CMOS circuits;
CMOS inverter;
CMOS technology;
NAND logic gates;
NOR logic gates;
PMOS;
SRAM;
nonclassical NMOS transistor;
power dissipation;
propagation delay time;
ring oscillator;
static random-access memory;
unipolar CMOS circuit;
voltage 0.5 V;
CMOS integrated circuits;
CMOS technology;
Inverters;
Logic gates;
MOSFET;
Propagation delay;
Random access memory;
21.
Low capacitance, high speed phototransistors with a large absorption region
机译：
具有大吸收区的低电容，高速光电晶体管
作者：
Keraly Christopher Lalau
;
Going Ryan
;
Wu Ming C.
;
Yablonovitch Eli
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
bipolar transistors;
cost reduction;
phototransistors;
APD;
BPT;
SNR;
amplifier;
avalanche photodetector;
energy cost reduction;
front-end detector;
large absorption region;
low capacitance high speed bipolar phototransistor;
optical communication;
optical receiver;
signal to noise ratio;
Absorption;
Germanium;
Junctions;
Optical pulses;
Phototransistors;
Silicon;
Specific absorption rate;
22.
High-density 3D electronic-photonic integration
机译：
高密度3D电子-光子集成
作者：
Stojanovic V.
;
Settaluri K.T.
;
Lin S.
;
Moazeni S.
;
Timurdogan E.
;
Sun C.
;
Moresco M.
;
Su Z.
;
Chen Y.-H.
;
Leake G.
;
LaTulipe D.
;
McDonough C.
;
Hebding J.
;
Coolbaugh D.
;
Watts M.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS integrated circuits;
automatic testing;
calibration;
circuit optimisation;
circuit tuning;
energy conservation;
energy consumption;
integrated optoelectronics;
lead bonding;
low-power electronics;
optical fibres;
silicon-on-insulator;
three-dimensional integrated circuits;
transceivers;
vias;
3D electronic-photonic integration;
CMOS wafer;
Luxtera's process;
Oracle;
ST Micro;
Si;
TOV;
chip-to-chip bumps;
deserializer;
electrical wirebond;
electronic chips;
electronic wafers;
energy consumption;
energy efficiency;
face-to-face microbump-copper-pillar bonding;
integration complexity;
interconnection parasitics;
modulator driver;
monolithic integration;
on-chip calibration;
on-chip deembedding structures;
optical chip-to-chip link;
optical energy;
optical power;
optimized photonics;
parasitic capacitance;
photonic SOI wafer;
photonic chips;
photonic components;
photonic devices;
photonic transceiver modules;
photonic wafers;
receiver sensitivity;
single mode optical fiber;
size 45 nm;
thermal lock circuitry;
thermal-tuning lock circuitry;
tight-pitch shallow through-oxide vias;
transmitter sensitivity;
Optical fiber communication;
Optical fiber sensors;
Optical fibers;
Optical transmitters;
Photonics;
Three-dimensional displays;
23.
Magneto-electric magnetic tunnel junction logic devices
机译：
磁电磁性隧道结逻辑器件
作者：
Sharma Nishtha
;
Marshall Andrew
;
Bird Jonathan
;
Dowben Peter
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
antiferromagnetism;
logic devices;
low-power electronics;
magnetic logic;
magnetic tunnelling;
magnetisation;
magnetoelectronics;
power consumption;
voltage control;
ME materials;
ME-AFM layer interface;
ME-MTJ;
antiferromagnetic magnetoelectric;
beyond-CMOS spin based device technologies;
boundary magnetization;
low power device;
magnetization reversal;
magnetoelectric magnetic tunnel junction logic devices;
power consumption;
spintronic devices;
three-terminal transistor functionality;
voltage-control;
voltage-driven switching scheme;
Adders;
CMOS integrated circuits;
Logic gates;
Magnetic devices;
Magnetic tunneling;
Magnetization;
24.
Impact of interface defects on tunneling FET turn-on steepness
机译：
接口缺陷对隧穿FET导通陡度的影响
作者：
Xiao T. Patrick
;
Xin Zhao
;
Agarwal Sapan
;
Yablonovitch Eli
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
field effect transistors;
probability;
tunnel transistors;
tunnelling;
conductance switch;
high quality tunneling interface;
interface trap densities;
intrinsic band tail steepness;
steep turn-on;
thermal activation;
tunneling FET turn-on steepness;
tunneling probability;
Junctions;
Logic gates;
Photonic band gap;
Semiconductor device measurement;
Thermal conductivity;
Transistors;
Tunneling;
25.
mLogic: All spin logic device and circuits
机译：
mLogic：所有自旋逻辑器件和电路
作者：
Zhu J.-G Jimmy
;
Bromberg D.M.
;
Moneck M.
;
Sokalski V.
;
Pileggi L.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
logic circuits;
spin Hall effect;
DMI;
Dzyaloshinskii-Moriya-interaction;
STT-MRAM;
all-spin logic circuits;
all-spin logic device;
electronic devices;
mCell;
mLogic;
metallic interface;
spin Hall effect;
spin transfer torque magnetic random access memory;
spin-based effects;
Current density;
Magnetic domain walls;
Magnetic domains;
Magnetic resonance imaging;
Magnetic switching;
Magnetic tunneling;
Switches;
26.
Optical antenna-enhanced nano-LED for energy efficient optical interconnect
机译：
光学天线增强型纳米LED用于节能光互连
作者：
Wu Ming C.
;
Yablonovitch Eli
;
Fortuna Seth
;
Eggleston Michael
;
Messer Kevin
;
Han Kevin
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
III-V semiconductors;
dipole antennas;
gallium arsenide;
indium compounds;
integrated optics;
light emitting diodes;
nanoelectronics;
nanophotonics;
optical interconnections;
slot antennas;
InGaAsP;
arch-dipole antennas;
cavity-backed optical slot antennas;
detector;
electrical interconnects;
electrically injected nano-LEDs;
electronic systems;
energy consumption;
energy efficiency;
energy efficient optical interconnect;
integrated circuits;
laser source;
monolayer two-dimensional semiconductor;
nanoscale emitter;
on-chip communications;
optical antenna-enhanced nanoLED;
optical antenna-enhanced nanoscale light-emitting diodes;
optical links;
optically pumped nano-LEDs;
photoreceiver;
phototransistor;
spontaneous emission rate;
ultra-low capacitance optical receivers;
Antennas;
High-speed optical techniques;
Optical interconnections;
Optical receivers;
Optical sensors;
Spontaneous emission;
Stimulated emission;
27.
Low-noise near-ballistic BN-graphene-BN heterostructure field-effect transistors for energy efficient electronic applications
机译：
适用于节能电子应用的低噪声近弹BN-石墨烯-BN异质结构场效应晶体管
作者：
Stolyarov M.A.
;
Rumyantsev S.L.
;
Shur M.
;
Balandin A.A.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
1/f noise;
boron compounds;
carrier density;
electron mobility;
graphene devices;
high electron mobility transistors;
low-power electronics;
monolayers;
viscoelasticity;
2D van der Waals materials;
BN-C;
HFETs;
I-V characteristics;
PPC;
Si-SiOsub2/sub;
ballistic electron conduction;
carrier concentration;
channel-area normalized noise spectral density;
current-voltage characteristics;
energy efficient electronic applications;
field-effect mobility extractions;
fully encapsulated graphene monolayer;
graphene flakes;
high electron mobility;
low-frequency 1/f noise level;
low-noise near-ballistic BN-graphene-BN heterostructure field-effect transistors;
low-power high-speed logic circuits;
low-voltage electronic applications;
micromanipulator;
noise reduction;
noise suppression;
normalized 1/f noise spectral density;
one-dimensional electrical contacts;
optical microscopy image;
poly-propylene carbonate;
size 10 nm;
size 100 nm;
temperature 293 K to 298 K;
transparent stamps;
ultra-high mobility;
viscoelastic materials;
Computers;
Graphene;
HEMTs;
High-speed optical techniques;
MODFETs;
Noise level;
28.
Optoelectronic integration for reduced power dissipation in optical interconnect
机译：
光电集成可减少光互连中的功耗
作者：
De Dobbelaere Peter
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
application specific integrated circuits;
integrated optoelectronics;
modules;
optical fibres;
optical interconnections;
optical losses;
optical transceivers;
printed circuits;
thermal management (packaging);
HUB ASIC;
IBM power 775 system;
PCB material;
PCBA;
electrical pad;
electrical signal integrity;
optical connector;
optical fiber;
optical high-speed interface;
optical interconnect;
optical loss;
optical transceiver;
optoelectronic integration;
power dissipation reduction;
printed circuit board;
switch chip;
thermal management;
transceiver module;
Application specific integrated circuits;
Biomedical optical imaging;
High-speed optical techniques;
Optical fibers;
Optical interconnections;
Transceivers;
29.
Influence of interface traps on the performance of Tunnel FETs
机译：
接口陷阱对隧道FET性能的影响
作者：
Esseni D.
;
Pala M.
;
Gnani E.
;
Sangiorgi E.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
III-V semiconductors;
energy conservation;
field effect transistors;
interface states;
tunnel transistors;
III-V TFET;
SS value;
TAT;
bulk trap;
drain current;
energy efficiency;
integrated circuit power supply;
interface trap;
slope transistor;
subthreshold swing;
trap density;
trap-assisted-tunneling;
tunnel field effect transistor;
tunneling current;
Current measurement;
Electronic mail;
Field effect transistors;
Integrated circuit modeling;
Power supplies;
30.
SOTB technology, which enables perpetually reliable CPU for IoT applications
机译：
SOTB技术，可为物联网应用提供永久可靠的CPU
作者：
Ishibashi Koichiro
;
Sugii Nobuyuki
;
Kobayashi Kazutoshi
;
Koide Tomoaki
;
Nagatomi Hiroki
;
Kamohara Shiro
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
Internet of Things;
elemental semiconductors;
large scale integration;
low-power electronics;
silicon;
IoT applications;
SOTB technology;
Si;
body bias generator;
current 15 nA;
energy harvesting power sources;
low power consumption;
low-power LSIs;
perpetually reliable CPU;
sensor systems;
silicon on thin buried oxide technology;
size 65 nm;
sleep mode;
voltage -1.06 V;
voltage 0.75 V;
wearable systems;
word length 32 bit;
CMOS integrated circuits;
Central Processing Unit;
Generators;
Layout;
Random access memory;
Reliability;
Substrates;
31.
A framework for generation and recombination in tunneling field-effect transistors
机译：
隧穿场效应晶体管中产生和重组的框架
作者：
Teherani James T.
;
Chern Winston
;
Agarwal Sapan
;
Hoyt Judy L.
;
Antoniadis Dimitri A.
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
field effect transistors;
tunnel transistors;
TFET transfer characteristics;
current density;
electrical characteristics;
subthreshold swing;
tunneling field-effect transistors;
Charge carrier processes;
Logic gates;
Tunneling;
32.
Superconducting computing: Lessons from an emerging technology
机译：
超导计算：新兴技术的经验教训
作者：
Holmes D. Scott
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
cryogenic electronics;
electronic design automation;
energy conservation;
niobium;
superconducting integrated circuits;
C3 program;
EDA;
IARPA cryogenic computing complexity program;
Nb;
cryogenic refrigerator;
electronic design automation;
energy-efficiency;
large-scale computing;
size 200 mm;
superconducting computing;
superconducting digital circuit;
superconducting electronic circuit;
Cryogenics;
Energy efficiency;
Foundries;
Government;
Large-scale systems;
Niobium;
Refrigerators;
33.
Magnonic holographic co-processor: An approach to energy-efficient complementary logic circuitry
机译：
Magnonic全息协处理器：一种节能互补逻辑电路的方法
作者：
Khitun Alexander
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS logic circuits;
coprocessors;
power consumption;
CMOS-based circuitry;
MHcP;
complementary metal-oxide-semiconductor-based circuitry;
data transfer;
energy-efficient complementary logic circuitry;
logic devices;
logic elements;
magnonic holographic coprocessor;
magnonic holographic logic unit;
nonvolatile memory development;
power consumption;
spin-based components;
spintronics;
task data processing;
von Neumann architecture scheme;
Databases;
Junctions;
Magnetic domains;
Magnetic resonance;
Magnetic tunneling;
Magnetomechanical effects;
Memory management;
34.
The energy scaling advantages of RRAM crossbars
机译：
RRAM交叉开关的能量缩放优势
作者：
Agarwal Sapan
;
Parekh Ojas D.
;
Tu-Thach Quach
;
James Conrad D.
;
Aimone James B.
;
Marinella Matthew
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
memristors;
resistive RAM;
Moore's law;
RRAM crossbar;
data processing;
energy scaling advantage;
memristor crossbar;
neuromorphic computing;
resistive random access memory;
Capacitance;
Energy efficiency;
Laboratories;
Random access memory;
Resistors;
Signal to noise ratio;
Wires;
35.
Tunneling FET device technologies using III-V and Ge materials
机译：
使用III-V和Ge材料的隧道FET器件技术
作者：
Takagi Shinichi
;
Min-soo Kim
;
Noguchi Munetaka
;
Nishi Koichi
;
Takenaka Mitsuru
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
III-V semiconductors;
field effect transistors;
germanium;
indium compounds;
optimisation;
semiconductor doping;
silicon;
tunnel transistors;
Ge;
III-V materials;
InGaAs;
Si;
in-situ doping;
planar-type TFET;
source-channel materials;
tunneling FET device technologies;
tunneling current;
tunneling field-effect transistors;
type-II heterostructure;
Indium gallium arsenide;
Junctions;
Silicon;
Temperature;
Tunneling;
Zinc;
36.
Tunneling nanoelectromechanical switches
机译：
隧穿纳米机电开关
作者：
Niroui Farnaz
;
Sletten Ellen M.
;
Yi Song
;
Wang Annie I.
;
Wen Jie Ong
;
Jing Kong
;
Yablonovitch Eli
;
Swager Timothy M.
;
Lang Jeffrey H.
;
Bulovic Vladimir
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
failure analysis;
field effect transistor switches;
leakage currents;
microswitches;
nanoelectromechanical devices;
tunnelling;
MOS transistors;
NEM switches;
metal-oxide semiconductor transistors;
near-zero off-state leakage currents;
on-off current ratios;
stiction-induced failure;
sub-threshold slopes;
surface adhesion forces;
switching behavior;
tunneling nanoelectromechanical switches;
Adhesives;
Electrodes;
Nanoscale devices;
Self-assembly;
Surface treatment;
Switches;
Tunneling;
37.
Specialization for energy efficiency using agile development
机译：
利用敏捷开发实现能源效率专业化
作者：
Nikolic Borivoje
;
Bachrach Jonathan
;
Alon Elad
;
Asanovic Krste
;
Patterson David
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
electronic engineering computing;
energy conservation;
integrated circuit design;
Agile development;
custom integrated circuit;
energy efficiency;
hardware generator;
hardware specialization designing;
iterative prototype;
target application domain;
Energy efficiency;
Generators;
Hardware;
Open source software;
Program processors;
Prototypes;
38.
Ultrafast spin dynamics as route to high Speed and energy efficient information technologies
机译：
超快速自旋动力学是通往高速和节能信息技术的途径
作者：
Rasing Theo
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
iron alloys;
magnetic recording;
optical switches;
spin dynamics;
HAMR;
cloud storage;
data storage;
digital economy;
energy consumption;
energy-efficient information technology;
femtosecond laser pulses;
femtosecond laser-induced AOS;
femtosecond laser-induced all-optical switching;
ferrimagnets;
heating limit;
high-speed information technology;
hybrid magnetic materials;
macroscopic magnetic ordering;
magnetic recording media technology;
magnetization reversal;
mobile devices;
optical wave-shaping;
photonic processors;
plasmonic antennas;
quantum computation;
rare-earth-free magnetic materials;
spin manipulation;
spin-based technology;
spintronics;
superparamagnetic limit;
transition metal alloys;
ultrafast spin dynamics;
ultrashort-laser pulses;
Amorphous magnetic materials;
Elementary particle exchange interactions;
Magnetic multilayers;
Magnetic recording;
Magnetic switching;
Magnetization;
Ultrafast optics;
39.
Optical slot antennas for enhancement of WSe
2
spontaneous emission rate
机译：
用于提高WSe
2 自发发射率的光学缝隙天线
作者：
Messer Kevin
;
Eggleston Michael
;
Desai Sujay B.
;
Fortuna Seth A.
;
Madhavapathy Surabhi
;
Zhao Peida
;
Jun Xiao
;
Xiang Zhang
;
Ali Javey
;
Wu Ming C.
;
Yablonovitch Eli
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
light emitting diodes;
light sources;
nanophotonics;
slot antennas;
tungsten compounds;
WSesub2/sub;
coupled light emitter;
fast light sources;
light emission;
local electromagnetic environment;
nanoLED device;
optical slot antennas;
photoluminescence measurements;
quantum efficiency;
semiconductor light emitters;
short-range optical communications;
spontaneous emission rate enhancement;
transition metal dichalcogenides;
Antenna measurements;
Light emitting diodes;
Photoluminescence;
Slot antennas;
Spontaneous emission;
Stimulated emission;
40.
Our computer systems are not good enough
机译：
我们的计算机系统还不够好
作者：
Colwell Robert
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
Economics;
Internet;
Servers;
Smart phones;
Software;
Supercomputers;
41.
Mapping 1D-FFT on an energy efficient 3D FPGA-DRAM architecture
机译：
在节能3D FPGA-DRAM架构上映射1D-FFT
作者：
Gadfort Peter
;
Dasu Aravind
;
Akoglu Ali
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
DRAM chips;
discrete Fourier transforms;
energy conservation;
fast Fourier transforms;
field programmable gate arrays;
signal processing;
3D FPGA-DRAM architecture;
DFT;
discrete Fourier transform;
dynamic random access memory;
energy efficiency;
field programmable gate array;
mapping 1D-FFT;
one-dimensional fast Fourier transform;
signal processing application;
size 65 nm;
Adders;
Computer architecture;
Energy efficiency;
Field programmable gate arrays;
Ports (Computers);
Random access memory;
Three-dimensional displays;
42.
Millivolt switches will support better energy-reliability tradeoffs
机译：
毫伏开关将支持更好的能源可靠性权衡
作者：
DeBenedictis Erik
;
Zima Hans
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
low-power electronics;
radiation effects;
semiconductor device reliability;
semiconductor switches;
ad hoc techniques;
aging parts;
computer reliability;
cosmic ray strikes;
cyber security vulnerabilities;
energy-reliability tradeoffs;
error correction;
millivolt switches;
thermal noise;
Computers;
Energy efficiency;
Error correction;
Laboratories;
Logic gates;
Reliability;
Thermal noise;
43.
Monolayer strain by NEMS for low power application
机译：
NEMS的单层应变，适用于低功率应用
作者：
Almeida S.
;
Zubia David
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS integrated circuits;
MOSFET;
bonding processes;
energy gap;
graphene;
nanoelectromechanical devices;
transition metals;
2D materials;
CMOS;
MOSFET devices;
MoSsub2/sub;
Moores law;
NEM switches;
NEMS;
TMD;
covalent bonded;
digital electronics;
electron volt energy 1.73 eV to 1.86 eV;
electronic devices;
graphene;
low power application;
nanoelectromechanical switches;
semimetal material band gap;
transition-metal dichalcogenides;
van der Waal forces;
Electric potential;
Force;
Logic gates;
Nanoelectromechanical systems;
Nonhomogeneous media;
Photonic band gap;
Strain;
44.
Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology
机译：
使用自旋电子学保持技术的基于FinFET的非易失性SRAM的电源门控架构的定量比较
作者：
Shuto Yusuke
;
Yamamoto Shuuichirou
;
Sugahara Satoshi
会议名称：
《Berkeley Symposium on Energy Efficient Electronic Systems》
|
2015年
关键词：
CMOS logic circuits;
MOSFET;
SRAM chips;
energy conservation;
low-power electronics;
magnetoelectronics;
CMOS logic systems;
FinFET;
NOF architectures;
NV-SRAM;
NVPG;
PG architectures;
energy efficiency;
nonvolatile SRAM;
nonvolatile power-gating;
nonvolatile state-data retention;
power-gating architectures;
spintronics retention technology;
static energy reduction technique;
Benchmark testing;
Computer architecture;
Energy efficiency;
FinFETs;
Magnetic tunneling;
Nonvolatile memory;
Random access memory;
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