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High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

召开年：1995
召开地：London
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1.Analyses of ohmic contacts to GaAs based microwave HBTs

机译：与基于GaAs的微波HBT的欧姆接触的分析
- 作者：Jones;K.A.;Hilton;K.P.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
2.Authors Index

机译：作者索引
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
3.Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

机译：第三届IEEE微波和光电应用高性能电子设备国际研讨会论文集EDMO 95
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
4.Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors

机译：毫米波InGaAs / InP异质结双极型光电晶体管
- 作者：Wake D.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
5.Noise and gain performance of pseudomorphic-HEMT vs temperature for microwave low-noise applications

机译：微波低噪声应用中伪HEMT的噪声和增益性能与温度的关系
- 作者：Livreri;P.;Sannino;M.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
6.The influence of bias conditions upon the intrinsic noise parameters of short gate length GaAs MESFETs

机译：偏置条件对短栅长GaAs MESFET的固有噪声参数的影响
- 作者：Greaves;S.D.;Unwin;R.T.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
7.Characterization of directional coupler-based optoelectronic devices

机译：基于定向耦合器的光电器件的表征
- 作者：Rahman;B.M.A.;Wongcharoen;T.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
8.Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set

机译：HEMT的噪声系数和增益与通过噪声系数测试仪测得的偏置条件的关系
- 作者：Di Paola;A.;Sannino;M.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
9.The application of end point detection in the fabrication of optical and microwave devices

机译：终点检测在光学和微波设备制造中的应用
- 作者：Bourke;M.M.;Hilton;K.P.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
10.Characterisation of transparent ITO emitter contact InP/InGaAs heterojunction phototransistors

机译：透明ITO发射极接触InP / InGaAs异质结光电晶体管的特性
- 作者：Bashar;S.A.;Rezazadeh;A.A.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
11.Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

机译：使用电测量，EDAX和SIMS表征n-GaAs上的Pd / Sn欧姆接触
- 作者：Islam;M.S.;McNally;P.J.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
12.Design of antireflection coatings for triple heterojunction AlGaAs-GaAs space solar cells

机译：三异质结AlGaAs-GaAs空间太阳能电池的减反射膜设计
- 作者：Al-Bustani;A.;Feteha;M.Y.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
13.Distributed amplifiers with embedded signal shaping for multigigabit transmission systems

机译：具有嵌入式信号整形的分布式放大器，用于多千兆位传输系统
- 作者：Borjak;A.;Monteiro;P.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
14.GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers

机译：用于高增益MMIC放大器的基于GaAs和InP的双栅极HEMT
- 作者：Baeyens Y.;Schreurs D.;Nauwelaers B.;Van der Zanden K.;Van Hove M.;De Raedt W.;Van Rossum M.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
15.General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance

机译：研究光电器件中的多余噪声的一般结果及其在改善器件性能中的应用
- 作者：Lukyanchikova;N.B.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
16.Hot electron degradation effects in Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.2/Ga/sub 0.8/As/GaAs PHEMTs

机译：Al / sub 0.25 / Ga / sub 0.75 / As / In / sub 0.2 / Ga / sub 0.8 / As / GaAs PHEMT中的热电子降解效应
- 作者：Cova;P.;Menozzi;R.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
17.Longitudinal mode control in Fabry-Perot lasers

机译：法布里-珀罗激光器的纵向模式控制
- 作者：Kozlowski D.A.;Young J.S.;England J.M.C.;Plumb R.G.S.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
18.Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)

机译：使用热蒸发透明导电铟锡氧化物（ITO）的低开启电压AlGaInP LED
- 作者：Aliyu;Y.H.;Morgan;D.V.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
19.Monolithic V-band high power and varactor tunable HEMT oscillators

机译：单片V波段高功率和变容二极管可调谐HEMT振荡器
- 作者：Schefer M.;Lott U.;Klepser B.-U.;Meier H.-P.;Patrick W.;Bachtold W.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
20.Monte Carlo simulations of carrier transport in high speed quantum well lasers

机译：高速量子阱激光器中载流子传输的蒙特卡洛模拟
- 作者：Crow;G.C.;Abram;R.A.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
21.New technique for increasing speed of semiconductor lasers

机译：提高半导体激光器速度的新技术
- 作者：Haldar M.K.;Mendis F.V.C.;Wang J.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
22.Nonlinear common source MESFET behaviour and model validation

机译：非线性共源MESFET行为和模型验证
- 作者：Passiopoulos G.;Webster D.R.;Parker A.E.;Haigh D.G.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
23.Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes

机译：非局部效应对薄GaAs p-i-n和n-i-p二极管的倍增特性的影响
- 作者：Plimmer;S.A.;David;J.P.R.
- 会议名称：《》 | 1995年
24.A large signal model for a GaInP/GaAs HBT

机译：GaInP / GaAs HBT的大信号模型
- 作者：Kelly M.J.;Stewart J.A.C.;Patterson A.D.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
25.A proposal of a broadband high gain block using cascaded single-stage distributed amplifiers

机译：使用级联单级分布式放大器的宽带高增益模块的建议
- 作者：Jia Yi Liang;Aitchison;C.S.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
26.A silica-on-silicon integrated optic interface for microwave sub-systems

机译：用于微波子系统的硅上硅集成光接口
- 作者：Murphy;M.M.;Rescod;C.R.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
27.On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

机译：AlGaAs / InGaAs PM-HEMT中温度和热电子诱导的降解
- 作者：Meneghesso;G.;De Bortoli;E.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
28.Strain-balanced quantum wells for power FET applications

机译：用于功率FET应用的应变平衡量子阱
- 作者：Harris J.J.;Roberts J.M.;Jaszek R.;Hopkinson M.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
29.Technology for monolithic integration of GaInAs MSM photodetectors and AlGaAs/GaAs/AlGaAs-HEMT electronics

机译：GaInAs MSM光电探测器与AlGaAs / GaAs / AlGaAs-HEMT电子器件的单片集成技术
- 作者：Bronner;N.;Benz;W.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
30.The electronic behaviour of Si/sub 3/N/sub 4/-GaAs interfaces

机译：Si / sub 3 / N / sub 4 / -GaAs界面的电子行为
- 作者：Swanson;J.G.;Wang;Q.H.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
31.Transient electro-thermal modelling of AlGas/GaAs HBTs

机译：AlGas / GaAs HBT的瞬态电热建模
- 作者：Russell I.A.D.;Webb P.W.;Davis R.G.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
32.Transient three-dimensional device simulation with PARDESIM

机译：使用PARDESIM进行瞬态三维设备仿真
- 作者：Gatzke C.;Schroeder D.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
33.An overview of high frequency circuit design on the GMMT GaAs HBT process

机译：GMMT GaAs HBT工艺的高频电路设计概述
- 作者：McCullagh;M.;Moult;J.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年
34.Manufacturability of quantum semiconductor devices

机译：量子半导体器件的可制造性
- 作者：Wilkinson V.A.;Kelly M.J.
- 会议名称：《High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on》 | 1995年