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Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

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1.A selective gate recess process utilizing MBE-grownIn_0.5Ga_0.5P etch-stop layers for GaAs-based FETtechnologies

机译：利用MBE生长的选择性栅极凹槽工艺用于基于GaAs的FET的In _{0.5 Ga _{0.5 P蚀刻停止层技术}}
- 作者：Hanson A.W.;Danzilio D.;Bacher K.;Leung L.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
2.Breakdown in millimeter-wave power InP HEMTs: a comparison withPHEMTs

机译：毫米波功率InP HEMT的故障：与苯丙胺
- 作者：del Alamo J.A.;Somerville M.H.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
3.Development of a GaAs-based monolithic surface acoustic waveintegrated chemical microsensor

机译：基于GaAs的单片表面声波的开发集成化学微传感器
- 作者：Baca A.G.;Heller E.J.;Hietala V.M.;Casalnuovo S.C.;Frye G.C.;Klem J.F.;Drummond T.J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
4.A novel fabrication process of surface via-holes for GaAs powerFETs

机译：GaAs功率的表面通孔的新颖制造工艺场效应管
- 作者：Furukawa H.;Fukui T.;Tanaka T.;Noma A.;Ueda D.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
5.Heterodimensional field effect transistors for ultra low powerapplications

机译：超低功耗的异质场效应晶体管应用领域
- 作者：Jian-Qiang Lu;Hurt M.J.;Peatman W.C.B.;Shur M.S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
6.Current path optimized structure for high drain current density andhigh gate-turn-on voltage enhancement mode heterostructure field effecttransistors

机译：电流路径优化结构，可实现高漏极电流密度和高栅极导通电压增强模式异质结构场效应晶体管
- 作者：Hara N.;Nakasha Y.;Nagahara M.;Joshin K.;Watanabe Y.;Takikawa M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
7.Intelligent pixel opto-VLSI architecture for mobile multimediacommunicator

机译：适用于移动多媒体的智能像素光电VLSI架构沟通者
- 作者：Esbraghian K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
8.Accurate and efficient small-signal modeling of active devicesusing artificial neural networks

机译：有源设备的准确，高效的小信号建模使用人工神经网络
- 作者：Watson P.M.;Weatherspoon M.;Dunleavy L.;Creech G.L.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
9.3 watt Ka-band MMIC HPA and driver amplifier implemented in a fullyselective 0.15 μm power PHEMT process

机译：3瓦Ka频段MMIC HPA和驱动器放大器完全实现选择性0.15μm功率PHEMT工艺
- 作者：Komiak J.J.;Kong W.;Chao P.C.;Nichols K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
10.A 6.45 GHz active bandpass filter using HBT negative resistanceelements

机译：使用HBT负电阻的6.45 GHz有源带通滤波器元素
- 作者：Kobayashi K.W.;Tran L.T.;Umemoto D.K.;Oki A.K.;Streit D.C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
11.A complete GaAs HEMT single chip data receiver for 40 Gbit/s datarates

机译：完整的GaAs HEMT单芯片数据接收器，用于40 Gbit / s数据费率
- 作者：Lang M.;Wang Z.G.;Thiede A.;Lienhart H.;Jakobus T.;Bronner W.;Hornung J.;Hulsmann A.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
12.Contents

机译：内容
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
13.The effect of MESFET structures on frequency dispersion of drainconductance and its impact on mark density effect of high speed logicICs

机译：MESFET结构对漏极频率色散的影响电导及其对高速逻辑标记密度效应的影响集成电路
- 作者：Nakajima S.;Tsumura E.;Yanagisawa M.;Sakurada T.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
14.Manufacturing large diameter GaAs substrates for epitaxial devicesby VB method

机译：制造用于外延器件的大直径GaAs衬底通过VB方法
- 作者：Nakai R.;Hagi Y.;Kawarabayashi S.;Miyajima H.;Toyoda N.;Kiyama M.;Sawada S.;Kuwata N.;Nakajima S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
15.A 100 W S-band AlGaAs/GaAs hetero-structure FET for base stationsof wireless personal communications

机译：用于基站的100 W S波段AlGaAs / GaAs异质结构FET个人无线通信
- 作者：Goto S.;Fujii K.;Morishige H.;Suzuki S.;Sakamoto S.;Yoshida N.;Tanino N.;Sato K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
16.LSI capability demonstration of an 0.15 μm-0.3 μm GaAs HEMTand PM-HEMT 3 level metallization E/D-technology for mixed signalcircuits

机译：0.15μm-0.3μmGaAs HEMT的LSI功能演示和PM-HEMT 3级金属化E / D技术用于混合信号电路
- 作者：Thiede A.;Lao Z.;Lienhart H.;Sedler M.;Seibel J.;Hornung J.;Schneider J.;Kaufel G.;Bronner W.;Kohler K.;Jakobus T.;Schlechtweg M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
17.A high efficiency single chain GaAs MESFET MMIC dual band poweramplifier for GSM/DCS handsets

机译：高效单链GaAs MESFET MMIC双频段电源GSM / DCS手机放大器
- 作者：Adar A.;DeMoura J.;Balshem H.;Lott J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
18.A high efficiency, 2 V single-supply voltage operation RF front-endMMIC for 1.9 GHz Personal Handy Phone Systems

机译：高效，2 V单电源电压工作RF前端适用于1.9 GHz个人手持电话系统的MMIC
- 作者：Choumei K.;Yamamoto K.;Kasai N.;Moriwaki T.;Yoshii Y.;Fujii T.;Otsuji J.;Miyazaki Y.;Tanino N.;Sato K.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
19.A low power 52.9 GHz static divider implemented in a manufacturable180 GHz AlInAs/InGaAs HBT IC technology

机译：可制造的低功耗52.9 GHz静态分频器180 GHz AlInAs / InGaAs HBT IC技术
- 作者：Sokolich M.;Docter D.P.;Brown Y.K.;Kramer A.R.;Jensen J.F.;Stanchina W.E.;Thomas S. III;Fields C.H.;Ahmari D.A.;Lui M.;Martinez R.;Duvall J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
20.A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1μm double-deck-shaped (DDS) gate E/D-HJFETs

机译：具有0.1的27 / GHz / 151 mW GaAs 256/258双模预分频器ICμm双层（DDS）栅极E / D-HJFET
- 作者：Wada S.;Maeda T.;Tokushima M.;Yamazaki J.;Ishikawa M.;Fujii M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
21.A packaged, low cost 17-20 GHz subharmonic downconverter forsatellite receiver applications

机译：一款封装好的低成本17-20 GHz次谐波下变频器，用于卫星接收器应用
- 作者：Blount P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
22.A 5.8 GHz, 3.0 V single-supply power MMIC for electronic tollcollection system

机译：适用于电子收费的5.8 GHz，3.0 V单电源电源MMIC收集系统
- 作者：Kunihisa T.;Yamamoto S.;Nishijima M.;Yokoyama T.;Nishitsuji M.;Nishii K.;Ishikawa O.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
23.W-band InP-based HEMT MMIC power amplifiers using finite-ground CPWdesign

机译：使用有限接地CPW的基于W波段InP的HEMT MMIC功率放大器设计
- 作者：Yu M.;Matloubian M.;Petre P.;Hamilton L.;Bowen R.;Lui M.;Sun H.C.;Ngo C.;Janke P.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
24.Migration from an AlGaAs to an InGaP emitter HBT IC process forimproved reliability

机译：从AlGaAs迁移到InGaP发射极HBT IC工艺提高可靠性
- 作者：Low T.S.;Hutchinson C.P.;Canfield P.C.;Shirley T.S.;Yeats R.E.;Chang J.S.C.;Essilfie G.K.;Culver M.K.;Whiteley W.C.;DAvanzo D.C.;Pan N.;Elliot J.;Lutz C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
25.77 GHz MMIC T/R module for diplex radar application in collisionavoidance radar (CAR)

机译：用于冲突中双工雷达的77 GHz MMIC T / R模块回避雷达（CAR）
- 作者：Mondal J.;Wong K.;Richardson D.;Vu K.;Peterson K.;Dietz G.;Haubenstricker R.;Calanca N.;Gluck L.;Moghe S.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
26.RF-to-digital receivers employing bandpass multibit ΣΔ ADC architectures

机译：采用带通多位ΣΔADC架构的RF到数字接收机
- 作者：Pellon L.E.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
27.Multi-octave transformer coupled differential amplifier for highdynamic range

机译：多倍频程变压器耦合差分放大器动态范围
- 作者：Meharry D.E.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
28.High power heterojunction GaAs switch IC with P-1 dB of more than38 dBm for GSM application

机译：高功率异质结GaAs开关IC，P-1 dB大于GSM应用为38 dBm
- 作者：Masuda M.;Ohbata N.;Ishiuchi H.;Onda K.;Yamamoto R.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
29.Device characterization of semi-insulating GaAs substrate grown byvertical boat method for ion-implantation process

机译：GaAs生长的半绝缘GaAs衬底的器件表征。离子注入工艺的垂直舟法
- 作者：Yanagisawa M.;Nakajima S.;Sakurada T.;Kiyama M.;Sawada S.;Nakai R.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
30.GaAs IC Symposium. IEEE Gallium Arsenide Integrated CircuitSymposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

机译：GaAs IC论坛。 IEEE砷化镓集成电路座谈会。 20周年。 1998年技术摘要（目录号98CH36260）
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
31.77 GHz high-isolation coplanar transmit-receive switch usingInGaAs/InP PIN diodes

机译：77 GHz高隔离度共面发射-接收开关，使用InGaAs / InP PIN二极管
- 作者：Alekseev E.;Pavlidis D.;Ziegler V.;Berg M.;Dickmann J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
32.L/S-band 140 W push-pull power AlGaAs/GaAs HFETs for digitalcellular base stations

机译：用于数字的L / S带140 W推挽功率AlGaAs / GaAs HFET蜂窝基站
- 作者：Takenaka I.;Takahashi H.;Asano K.;Ishikura K.;Morikawa J.;Sato K.;Takano I.;Hasegawa K.;Tokunaga K.;Emori F.;Kuzuhara M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
33.Record power-added efficiency using GaAs on insulator MESFETtechnology

机译：在绝缘体MESFET上使用GaAs记录功率附加效率技术
- 作者：Jenkins T.;Kehias L.;Parikh P.;Ibbetson J.;Mishra U.;Docter D.;Minh Le;Kiziloglu K.;Grider D.;Pusl J.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
34.Efficiency and linearity improvement in power amplifiers forwireless communications

机译：功率放大器的效率和线性度改善无线通讯
- 作者：Asbeck P.;Hannington G.;Chen P.F.;Larson L.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
35.The importance of gate charge formulation in large-signal PHEMTmodeling

机译：栅极电荷公式在大信号PHEMT中的重要性造型
- 作者：Mallavarpu R.;Teeter D.;Snow M.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
36.40-GHz frequency dividers with reduced power dissipation fabricatedusing high-speed small-emitter-area AlGaAs/InGaAs HBTs

机译：降低功耗的40 GHz分频器使用高速小发射极区域AlGaAs / InGaAs HBT
- 作者：Amamiya Y.;Niwa T.;Nagano N.;Mamada M.;Suzuki Y.;Shimawaki H.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》
37.High performance InP-based phototransistors for long wavelength,HBT-based optical receivers

机译：高性能基于InP的光电晶体管，可实现长波长，基于HBT的光接收器
- 作者：Frimel S.M.;Roenker K.P.;Stanchina W.E.;Sun H.C.
- 会议名称：《Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual》