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Annual IEEE International Reliability Physics Symposium
Annual IEEE International Reliability Physics Symposium
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1.
THERMAL LASER STIMULATION OF ACTIVE DEVICES IN SILICON - A QUANTITATIVE FET PARAMETER INVESTIGATION
机译:
硅中活性器件的热激光刺激 - 定量FET参数调查
作者:
Christian Boit
;
Arkadiusz Glowacki
;
Sanjib Kumar Brahma
;
Kristin Wirth
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Thermal Laser Stimulation (TLS);
Soft Defect Localization (SDL);
OBIRCH;
Microelctronics Failure Analysis Through Chip Backside;
Temperature dependence of FET Parameters;
2.
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
机译:
叠层对Cu / Low K互连的电迁移可靠性改进的影响
作者:
Hu C.-K.
;
Canaperi D.
;
Chen S.T.
;
Gignac L.M.
;
Herbst B.
;
Kaldor S.
;
Krishnan M.
;
Liniger E.
;
Rath D.L.
;
Restaino D.
;
Rosenberg R.
;
Rubino J.
;
Seo S.-C.
;
Simon A.
;
Smith S.
;
Tseng W.-T.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
electromigration;
cobalt alloys;
tungsten alloys;
phosphorus alloys;
tantalum;
tantalum alloys;
silicon compounds;
integrated circuit reliability;
overlayers;
electromigration reliability improvement;
Cu/low K interconnects;
Cu Damascene lines;
interface diffusion;
electromigration lifetime;
2.0 eV;
1.4 eV;
0.85 to 1.1 eV;
Cu;
CoWP;
Ta-TaN;
SiN/sub x/;
SiC/sub x/N/sub y/H/sub z/;
3.
Convergence and interaction of BEOL and BE reliability methodology
机译:
BEOL的收敛性和相互作用和可靠性方法
作者:
Rzepka S.
;
Lepper M.
;
Bottcher M.
;
Bauer R.
;
Weber S.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
semiconductor device models;
integrated circuit reliability;
BE reliability methodology;
BEOL reliability methodology;
interaction;
convergence;
high volume microelectronic fabrication;
increasing convergence;
stronger interaction;
back end of line;
back end processes;
4.
Structural analysis of integrated circuits using scanning laser ultrasonics
机译:
扫描激光超声波集成电路的结构分析
作者:
Andriamonje G.
;
Pouget V.
;
Ousten Y.
;
Lewis D.
;
Plano B.
;
Danto Y.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
integrated circuit testing;
integrated circuit reliability;
VLSI;
photoacoustic effect;
ultrasonic materials testing;
measurement by laser beam;
scanning laser ultrasonics;
integrated circuits;
structural analysis;
VLSI circuit;
picosecond ultrasonics technique;
optical nondestructive technique;
ultrasound generation;
ultrasound detection;
passivated circuits;
protection layer;
5.
CORRELATION BETWEEN STRESS-INDUCED LEAKAGE CURRENT (SILC) AND THE HfO{sub}2 BULK TRAP DENSITY IN A SiO{sub}2/HfO{sub}2 STACK
机译:
应力引起的漏电流(SILC)与SIO {SUB} 2 / HFO {SUB} 2堆叠中的HFO {SUB} 2散装捕集密度的相关性
作者:
F. Crupi
;
R. Degraeve
;
A. Kerber
;
D. H. Kwak
;
G. Groeseneken
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
6.
Effects of thin SiN interface layer on transient I-V characteristics and stress induced degradation of high-k dielectrics
机译:
薄SIN接口层对高k电介质瞬态I-V特性和应力诱导降解的影响
作者:
Kang C.Y.
;
Cho H.-J.
;
Kang C.S.
;
Choi R.
;
Kim Y.H.
;
Rhee S.J.
;
Choi C.H.
;
Akbar S.M.
;
Lee J.C.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
silicon compounds;
dielectric thin films;
semiconductor device breakdown;
semiconductor device reliability;
interface structure;
interface states;
defect states;
thin SiN interface layer;
transient I-V characteristics;
stress induced degradation;
high-k dielectrics;
charge trapping;
de-trapping characteristics;
time-dependent threshold voltage instability;
7.
6-T CELL CIRCUIT DEPENDENT GOX SBD MODEL FOR ACCURATE PREDICTION OF OBSERVED VCCMIN TEST VOLTAGE DEPENDENCY
机译:
6-T电池电路相关的GOX SBD模型,用于准确预测观察到的VCCMin测试电压依赖性
作者:
K. Mueller
;
S. Gupta
;
S. Pae
;
M. Agostinelli
;
P. Aminzadeh
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
8.
ENHANCED ESD PROTECTION ROBUSTNESS OF A LATERAL NPN STRUCTURE IN THE ADVANCED CMOS
机译:
增强了先进CMOS中横向NPN结构的ESD保护稳健性
作者:
V. Vassilev
;
G. Groeseneken
;
M. Steyaert
;
H. Maes
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
ESD;
Snapback;
Lateral NPN;
9.
Pattern density effect of trench isolation-induced mechanical stress on device reliability in sub-0.1/spl mu/m technology
机译:
沟槽隔离诱导机械应力对亚0.1 / SPL MU / M技术装置可靠性的图案密度效应
作者:
Shih J.R.
;
Wang R.
;
Sheu Y.M.
;
Lin H.C.
;
Wang J.J.
;
Wu K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
piezoresistance;
semiconductor device breakdown;
semiconductor device reliability;
hot carriers;
carrier mobility;
pattern density effect;
trench isolation-induced mechanical stress;
device reliability;
sub-0.1/spl mu/m technology;
shallow trench isolation;
hot carrier-induced degradation;
MOSFETs;
hot carrier lifetime;
channel width;
piezoresistance effect;
tensile pocket;
0.1 micron;
10.
Qualification Method for DRAM Retention by Leakage Current Evaluation using Subthreshold Characteristics of Cell Transistors
机译:
利用细胞晶体管的亚阈值特性,漏电流评估的DRAM保持资格方法
作者:
Young Pil Kim
;
Beom Jun Jin
;
Sun-Ghil Lee
;
Siyoung Choi
;
Uin Chung
;
Joo Tae Moon
;
Sang U. Kim
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
11.
A methodology for accurate assessment of soft-broken gate oxide leakage and the reliability of VLSI circuits
机译:
一种准确评估软破栅氧化物泄漏的方法及VLSI电路的可靠性
作者:
Mason P.W.
;
La Duca A.J.
;
Holder C.H.
;
Alam M.A.
;
Hwang D.K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
VLSI;
integrated circuit reliability;
integrated circuit modelling;
leakage currents;
electric breakdown;
soft-broken gate oxide leakage;
reliability;
accurate assessment;
VLSI circuits;
standby leakage current;
post-soft-breakdown leakage-scaling model;
device-level time-dependent dielectric breakdown;
absolute reliability;
ultra-thin oxides;
12.
Statistical Modeling for Post-Cycling Data Retention of Split-Gate Flash Memories
机译:
分裂门闪存后循环数据保留的统计建模
作者:
Ling-Chang Hu
;
An-Chi Kang
;
I-Tai Liu
;
Yao-Feng Lin
;
Kenneth Wu
;
Ya-Chin King
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
13.
MODELING AND VERIFICATION OF SINGLE EVENT TRANSIENTS IN DEEP SUBMICRON TECHNOLOGIES
机译:
深度亚微米技术中单事件瞬变的建模与验证
作者:
Matthew J. Gadlage
;
Ronald D. Schrimpf
;
Joseph M. Benedetto
;
Paul H. Eaton
;
Thomas L. Turflinger
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Single Event Effects (SEEs);
Single Event Transients (SETs);
14.
Hot-carrier injection in step-drift rf power LDMOSFET
机译:
步进漂移RF Power LDMOSFET中的热载体注射
作者:
Cao G.
;
De Souza M.M.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
hot carriers;
semiconductor device breakdown;
semiconductor device reliability;
radiofrequency amplifiers;
charge injection;
surface potential;
hot-carrier injection;
step-drift rf power LDMOSFET;
lower electric field;
channel region;
substrate current;
step-drift design;
single-drift design;
bias drift;
current sweep range;
voltage sweep range;
power capability;
RF amplifier;
transconductance performance;
15.
Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's
机译:
氧化栅极 - 氧化物崩溃对狭窄和宽NFET的影响
作者:
Kaczer B.
;
De Keersgieter A.
;
Mahmood S.
;
Degraeve R.
;
Groeseneken G.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
semiconductor device breakdown;
semiconductor device reliability;
leakage currents;
dielectric thin films;
hardness;
electric breakdown;
gate-oxide breakdown;
hardness;
narrow nFET;
soft gate-oxide breakdown event;
voltage stress;
16.
Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors
机译:
氮化硅电介质基金属 - 绝缘金属电容器的可靠性
作者:
Remmell T.
;
Ramprasad R.
;
Roberts D.
;
Raymond M.
;
Martin M.
;
Qualls D.
;
Luckowski E.
;
Braithwaite S.
;
Miller M.
;
Walls J.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MIM devices;
capacitors;
electric breakdown;
reliability;
Si/sub 3/N/sub 4/ dielectric-based metal-insulator-metal capacitors;
TDDB testing;
MIM capacitors;
high quality lifetime data;
very large Weibull betas;
consistency;
wafer-scale tests;
package level tests;
17.
Stress-induced voiding in multi-level copper/low-k interconnects
机译:
压力诱导的多级铜/低k互连中的空隙
作者:
Lim Y.K.
;
Lim Y.H.
;
Seet C.S.
;
Zhang B.C.
;
Chok K.L.
;
See K.H.
;
Lee T.J.
;
Hsia L.C.
;
Pey K.L.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
voids (solid);
electromigration;
stress analysis;
failure analysis;
integrated circuit reliability;
sputtered coatings;
diffusion barriers;
permittivity;
dielectric thin films;
integrated circuit testing;
stress-induced voiding;
multi-level copper/low-k interconnects;
vias;
metallization layers;
stress migration test;
thermally induced stress;
accumulated compressive stress;
dual-via interconnect;
150 to 300 C;
Cu;
18.
New screen methodology for ultra thin gate oxide technology
机译:
用于超薄栅极氧化物技术的新屏幕方法
作者:
Aaron Wang
;
Wu C.H.
;
Shiue R.Y.
;
Huang H.M.
;
Wu K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
semiconductor device reliability;
integrated circuit reliability;
semiconductor device breakdown;
semiconductor device testing;
integrated circuit testing;
dielectric thin films;
screen methodology;
ultra thin gate oxide technology;
Less Noise Margin dice;
reliability weakness;
high temperature chip probing test;
functional test;
assess reliability risk;
19.
Thermal runaway avoidance during burn-in
机译:
烧坏期间热失控避免
作者:
Vassighi A.
;
Semenov O.
;
Sachdev M.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
thermal resistance;
integrated circuit reliability;
semiconductor device breakdown;
semiconductor device reliability;
thermal stresses;
thermal runaway avoidance;
burn-in;
deep sub-micron technologies;
standby leakage current;
high performance processors;
increased junction temperature;
20.
Highly reliable dielectric/metal bilayer sidewall diffusion barrier in Cu/porous organic ultra low-k interconnects
机译:
Cu /多孔有机超低k互连的高度可靠的介质/金属双层侧壁扩散屏障
作者:
Zhe Chen
;
Prasad K.
;
Li C.Y.
;
Lu P.W.
;
Su S.S.
;
Tang L.J.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
surface diffusion;
diffusion barriers;
organic compounds;
permittivity;
dielectric thin films;
semiconductor device reliability;
integrated circuit reliability;
plasma CVD coatings;
surface roughness;
highly reliable dielectric/metal bilayer sidewall diffusion barrier;
Cu/porous organic ultra low-k interconnects;
a-SiC:H;
dielectric layer;
metal layer;
reliability;
electrical performance;
plasma enhanced chemical vapor deposition;
rough surface;
Cu;
21.
Electrical fails specific to Pressure Cooker Test
机译:
电气故障特定于压力炊具测试
作者:
Wiggins L.
;
Perry C.
;
Coffin J.
;
Dyll E.
;
Fausse M.
;
Masanori K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
ball grid arrays;
plastic packaging;
electric breakdown;
Pressure Cooker Test;
failure analysis;
failure mechanism;
Flip Chip Plastic Ball Grid Array;
solder causing shorts;
22.
INFLUENCE OF CHARGE TRAPPING ON AC RELIABILITY OF HIGH-K DIELECTRICS
机译:
电荷诱捕对高k电介质交流可靠性的影响
作者:
M. Kerber
;
R. Duschl
;
H. Reisinger
;
S. Jakschik
;
U. Schroder
;
T. Hecht
;
S. Kudelka
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
23.
THE CHALLENGE TO RECORD CORRECT FAST WLR MONITORING DATA FROM PRODUCTIVE WAFERS AND TO SET REASONABLE LIMITS
机译:
挑战以生产性晶圆的正确WLR监测数据进行记录,并设定合理限制
作者:
Andreas Martin
;
Josef Fazekas
;
Andreas Pietsch
;
Werner Muth
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
24.
THRESHOLD ENERGY OF NEUTRON-INDUCED SINGLE EVENT UPSET AS A CRITICAL FACTOR
机译:
中子诱导的单一事件作为关键因素的阈值能量
作者:
Y. Yahagi
;
E. Ibe
;
Y. Takahashi
;
Y. Saito
;
A. Eto
;
M. Sato
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
25.
CHARACTERIZATION OF THE TIME-DEPENDENT RELIABILITY FALLOUT AS A FUNCTION OF YIELD FOR A 130NM SRAM DEVICE AND APPLICATION TO OPTIMIZE PRODUCTION BURN-IN
机译:
用于130nm SRAM设备的产量的时间依赖可靠性辐射的表征和优化生产烧伤的函数
作者:
Keith R. Forbes
;
Phil Schani
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS reliability;
Bum-in;
Defect;
Yield;
Reliability modeling;
Acceleration factor;
High-voltage screen;
26.
Native-NMOS-triggered SCR (NANSCR) for ESD protection in 0.13-/spl mu/m CMOS integrated circuits
机译:
在0.13- / SPL MU / M CMOS集成电路中的ESD保护的本机NMOS触发的SCR(NANSCR)
作者:
Ming-Dou Ker
;
Kuo-Chun Hsu
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
MOS integrated circuits;
electrostatic discharge;
integrated circuit design;
integrated circuit reliability;
native-NMOS-triggered SCR;
ESD protection;
0.13-/spl mu/m CMOS integrated circuits;
NANSCR;
trigger voltage;
turn-on resistance;
turn-on speed;
CDM ESD level;
ultra-thin gate oxide;
power-rail ESD protection circuits without latchup;
0.13 micron;
1.2 V;
27.
Integration issues of high-k gate stack: Process-induced charging
机译:
高k门堆栈的集成问题:过程诱导的充电
作者:
Bersuker G.
;
Gutt J.
;
Chaudhary N.
;
Moumen N.
;
Lee B.H.
;
Barnett J.
;
Gopalan S.
;
Brown G.
;
Kim Y.
;
Young C.D.
;
Peterson J.
;
Li H.-J.
;
Zeitzoff P.M.
;
Sim G.A.J.H.
;
Lysaght P.
;
Gardner M.
;
Murto R.W.
;
Huff H.R.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
hafnium compounds;
CMOS integrated circuits;
dielectric thin films;
permittivity;
integrated circuit reliability;
electric breakdown;
integration issues;
high-k gate stack;
process-induced charging;
Hf-based gate stacks;
standard planar CMOS process flow;
transistor processing;
electrical properties;
short channel transistors;
process sequence;
28.
Impact of Stress Induced Leakage Current on Power-Consumption in Ultra-Thin Gate Oxides
机译:
应力诱导漏电流对超薄栅极氧化物中功耗的影响
作者:
W. Lai
;
J. Sune
;
E. Wu
;
E. Nowak
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
SILC;
Power consumption;
Oxide reliability;
29.
Characterization of the time-dependent reliability fallout as a function of yield for a 130nm SRAM device and application to optimize production burn-in
机译:
用于130nm SRAM设备的产量的时间依赖可靠性辐射的表征和优化生产烧伤的函数
作者:
Forbes K.R.
;
Schani P.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
SRAM chips;
integrated circuit reliability;
integrated circuit manufacture;
integrated circuit yield;
time-dependent reliability fallout;
yield;
130nm SRAM device;
optimize production burn-in;
thermal acceleration;
voltage;
high-voltage test screening;
130 nm;
30.
Thermal Cycle Reliability of Stacked Via Structures with Copper Metallization and an Organic Low-k Dielectric
机译:
具有铜金属化的通过结构堆叠的热循环可靠性和有机低k电介质
作者:
R. G. Filippi
;
J. F. McGrath
;
T. M. Shaw
;
C. E. Murray
;
H. S. Rathore
;
P. S. McLaughlin
;
V. McGahay
;
L. Nicholson
;
P.-C. Wang
;
J. R. Lloyd
;
M. Lane
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Thermal cycle;
Fatigue;
Mechanical integrity;
31.
Effects of low k film properties on electromigration performance
机译:
低K膜特性对电迁移性能的影响
作者:
Wei Lu
;
Yeow Kheng Lim
;
See A.
;
Tae Jong Lee
;
Liang Choo Hsia
;
Hander J.
;
Haiying Fu
;
Ling Soon Wong
;
Fong Pin Fen
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
electromigration;
dielectric thin films;
carbon;
semiconductor device breakdown;
semiconductor device reliability;
copper;
integrated circuit interconnections;
integrated circuit reliability;
mechanical strength;
fracture toughness;
low k film properties;
electromigration performance;
reliability;
first-generation C-doped dielectric film;
high mechanical strength;
improved toughness;
cohesive failures;
increased film fracture toughness;
Cu;
32.
Transient-LU failure analysis of the ICs, methods of investigation and computer aided simulations
机译:
ICS的瞬态-LU故障分析,调查方法和计算机辅助模拟
作者:
Domanski K.
;
Bargstadt-Franke S.
;
Stadler W.
;
Streibl M.
;
Steckert G.
;
Bala W.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit testing;
failure analysis;
technology CAD (electronics);
transient analysis;
transient-LU failure analysis;
computer aided simulations;
transient latch-up;
TCAD simulations;
33.
Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric
机译:
HFSION栅电介质的N-MISFET中热载体效应的研究
作者:
Takayanagi M.
;
Watanabe T.
;
Iijima R.
;
Ishimaru K.
;
Tsunashima Y.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MISFET;
tunnelling;
hot carriers;
electron traps;
hafnium compounds;
silicon compounds;
semiconductor device breakdown;
semiconductor device reliability;
hot carrier effects;
n-MISFETs;
HfSiON gate dielectric;
hot carrier reliability;
electron traps;
device degradation;
worst hot carrier stress condition;
HfSiON;
34.
Drain biased TDDB lifetime model for ultra thin gate oxide
机译:
用于超薄栅极氧化物的漏极偏置TDDB寿命模型
作者:
Chin-Yuan Ko
;
Tsai Y.S.
;
Liao P.J.
;
Wang J.J.
;
Oates A.
;
Wu K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
dielectric thin films;
carrier density;
charge injection;
MOSFET;
drain biased TDDB lifetime model;
ultra thin gate oxide;
hole injection;
stress area difference;
strong area dependence;
35.
The last trap that form the percolation path - the stress voltage effect
机译:
形成渗透路径的最后一个陷阱 - 压力电压效应
作者:
Kin P. Cheung
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
36.
Stress modeling of Cu/low-k BEoL - application to stress migration
机译:
Cu / Low-K BEOL的应力建模 - 施用压力迁移
作者:
Zhai C.J.
;
Yao H.W.
;
Besser P.R.
;
Marathe A.
;
Blish R.C. II
;
Erb D.
;
Hau-Riege C.
;
Taylor S.
;
Taylor K.O.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
stress analysis;
finite element analysis;
electromigration;
stress modeling;
Cu/low-k BEoL;
stress migration;
stress-induced voiding;
Back End of Line;
mean time to failure;
interlayer dielectric;
stack;
metal line width;
stress migration reliability;
Finite Element Analysis;
via-chain test structure;
process steps;
stress evolution;
process-oriented modeling approach;
Cu;
37.
NEW FINDINGS OF NBTI IN P ARTIALLY DEPLETED SOI TRANSISTORS WITH ULTRA-THIN GATE DIELECTRICS
机译:
具有超薄栅极电介质的P推动耗尽的SOI晶体管NBTI的新发现
作者:
John (Jinlong) Zhang
;
Amit Marathe
;
Kurt Taylor
;
Eugene Zhao
;
Bill En
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
PMOSFET;
SOI;
FB;
BT;
NBTI;
Scaling;
Self-healing;
38.
Standby Current Prediction Model for Microprocessors Reliability Risk Assessment
机译:
微处理器可靠性风险评估的备用电流预测模型
作者:
Boris Lisenke
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
39.
Model-Based Guidelines to Suppress Cable Discharge Event (CDE) Induced Latchup
机译:
基于模型的准则来抑制电缆放电事件(CDE)诱导的闩锁
作者:
K. Chatty
;
P. Cottrell
;
R. Gauthier
;
M. Muhammad
;
F. Stellari
;
A. Weger
;
P. Song
;
M. McManus
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
40.
Hot Carrier Degradation in Novel Strained-Si nMOSFETs
机译:
新型紧张Si NMOSFET中的热载体降解
作者:
M. F. Lu
;
Sinclair Chiang
;
Alex Liu
;
S. Huang-Lu
;
M. S. Yeh
;
J. R. Hwang
;
T. H. Tang
;
W. T. Shiau
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Hot carrier degradation;
Strained-Si;
Short channel;
41.
C-V AND C-P CHARACTERIZATION SENSITIVITIES FOR FAST AND SLOW-STATE TRAPS IN VERY THIN OXIDE MOSFETs
机译:
C-V和C-P表征非常薄的氧化物MOSFET中的快速和慢型陷阱的敏感性
作者:
JEAN-YVES ROSAYE
;
YUKIO YASUDA
;
AKIRA SAKAI
;
PIERRE MIALHE
;
JEAN-PIERRE CHARLES
;
YUKIHIKO WATANABE
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
C-V;
C-P;
TDCV;
SILC;
Hysteresis;
Slow-state;
Fast state traps;
42.
Gate fault isolation and parametric characterization through the use of Atomic Force Probing
机译:
栅极故障隔离和参数化通过使用原子力探测
作者:
Erickson A.N.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
integrated circuit reliability;
atomic force microscopy;
semiconductor device testing;
integrated circuit testing;
electric breakdown;
tunnelling;
gate fault isolation;
parametric characterization;
Atomic Force Probing;
gate oxide breakdown;
pico-current imaging;
conductive imaging;
43.
A METHODOLOGY FOR ACCURATE ASSESSMENT OF SOFT-BROKEN GATE OXIDE LEAKAGE AND THE RELIABILITY OF VLSI CIRCUITS
机译:
一种准确评估软破栅氧化物泄漏的方法及VLSI电路的可靠性
作者:
P. W. Mason
;
A. J. La Duca
;
C. H. Holder
;
M. A. Alam
;
D. K. Hwang
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Oxide reliability;
Breakdown;
TDDB;
CMOS circuit;
IDDQ leakage current;
Scaling;
Multiple breakdown;
Test methodology;
44.
Transistor Sizing for Radiation Hardening
机译:
用于辐射硬化的晶体管尺寸
作者:
Quming Zhou
;
Kartik Mohanram
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
45.
HYDROGEN-RELATED EXTRINSIC OXIDE TRAP GENERATION IN THIN GATE OXIDE FILM DURING NEGATIVE-BIAS TEMPERATURE INSTABILITY STRESS
机译:
负偏置温度不稳定应力期间薄栅氧化膜中的氢相关外在氧化物阱。
作者:
Jae-Sung Lee
;
Joseph W. Lyding
;
Karl Hess
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Negative-bias-temperature instability;
Oxide trap;
Hydrogen;
Deuterium;
46.
WIDEBAND AND HIGH RELIABILITY RF-MEMS SWITCHES USING PZT/HfO{sub}2 MULTI-LAYERED HIGH K DIELECTRICS
机译:
宽带和高可靠性RF-MEMS开关使用PZT / HFO {SUB} 2多层高k电介质
作者:
Jiunnjye Tsaur
;
Kazumasa Onodera
;
Takeshi Kobayashi
;
Masaaki Ichiki
;
Ryutaro Maeda
;
Tadatomo Suga
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
RF MEMS;
Micro switch;
Dielectric constant;
47.
A Comprehensive Framework For Predictive Modeling of Negative Bias Temperature Instability
机译:
负偏置温度不稳定预测建模的综合框架
作者:
S. Chakravarthi
;
A. T. Krishnan
;
V. Reddy
;
C. R. Machala
;
S. Krishnan
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
48.
Influence of charge trapping on AC reliability of high-k dielectrics
机译:
电荷诱捕对高k电介质交流可靠性的影响
作者:
Kerber M.
;
Duschl R.
;
Reisinger H.
;
Jakschik S.
;
Schroder U.
;
Hecht T.
;
Kudelka S.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
alumina;
DRAM chips;
capacitors;
semiconductor device breakdown;
semiconductor device reliability;
permittivity;
dielectric thin films;
integrated circuit reliability;
charge trapping;
AC reliability;
high-k dielectrics;
Al/sub 2/O/sub 3/ dielectrics;
trench DRAM capacitors;
frequency dependent lifetime reduction;
lower voltage acceleration;
steeper Weibull distributions;
Al/sub 2/O/sub 3/;
49.
AN ALPHA IMMUNE AND ULTRA Low NEUTRON SER HIGH DENSITY SRAM
机译:
α免疫和超低中子Ser高密度SRAM
作者:
Philippe Roche
;
Francois Jacquet
;
Christian Caillat
;
Jean-Pierre Schoellkopf
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
50.
NEUTRON-INDUCED SEU IN BULK AND SOI SRAMs IN TERRESTRIAL ENVIRONMENT
机译:
中子诱导的SEU在散装环境中散装和SOI SRAM
作者:
J. Baggio
;
D. Lambert
;
V. Ferlet-Cavrois
;
C. Dhose
;
K. Hirose
;
H. Saito
;
J. M. Palau
;
F. Saigne
;
B. Sagnes
;
N. buard
;
T. Carriere
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
SER;
Neutron;
SOIFD;
51.
Thermomechanical behavior and reliability of Au/Si MEMS structures
机译:
AU / SI MEMS结构的热机械行为及可靠性
作者:
Miller D.
;
Herrmann C.
;
Spark K.
;
Finch D.
;
George S.
;
Stoldt C.
;
Gall K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
atomic layer deposition;
thermomechanical treatment;
gold;
silicon;
micromechanical devices;
semiconductor device reliability;
semiconductor-metal boundaries;
elemental semiconductors;
thermomechanical behavior;
reliability;
Au/Si MEMS structures;
micromechanical structures;
nanometer-thick atomic-layer deposition coatings;
Au-Si;
52.
The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology
机译:
深沟和基板抗性对BICMOS硅锗技术锁定鲁棒性的影响
作者:
Voldman S.H.
;
Watson A.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Ge-Si alloys;
BiCMOS integrated circuits;
heterojunction bipolar transistors;
flip-flops;
BiCMOS digital integrated circuits;
electrostatic discharge;
deep trench;
substrate resistance;
latchup robustness;
BiCMOS SiGeC HBT technology;
deep trench guard ring structures;
trigger contours;
linear-logarithm space;
0.13 micron;
200 GHz;
SiGeC;
53.
LAYOUT DESIGN DEPENDENCE OF NBTI FOR I/O p-MOSFET
机译:
NBTI对I / O P-MOSFET的布局设计依赖性
作者:
Victor Koldyaev
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Reliability;
NBTI;
P-MOSFET Device and Design and Process Interaction;
54.
STRUCTURAL ANALYSIS OF INTEGRATED CIRCUITS USING SCANNING LASER ULTRASONICS
机译:
扫描激光超声波集成电路的结构分析
作者:
Gregory Andriamonje
;
Vincent Pouget
;
Yves Ousten
;
Dean Lewis
;
Bernard Piano
;
Yves Danto
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Optical beam;
Uultrasonics;
Failure analysis;
55.
INVESTIGATION OF CIRCUIT-LEVEL OXIDE DEGRADATION AND ITS EFFECT ON CMOS INVERTER OPERATION AND MOSFET CHARACTERISTICS
机译:
电路氧化物降解研究及其对CMOS逆变器运行和MOSFET特性的影响
作者:
Betsy J. Cheek
;
Nate Stulzke
;
Santosh Kuma
;
R. Jacob Baker
;
Amy J. Moll
;
William B. Knowlton
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Circuit model;
Circuit reliability;
CMOS;
Dielectric breakdown;
Gate oxide reliability;
Inverter degradation;
MOSFEET degradation;
56.
Charge Trapping and Device Performance Degradation in MOCVD Hafnium-based Gate Dielectric Stack Structures
机译:
基于MoCVD铪基介质堆结构的电荷诱捕和装置性能下降
作者:
Chadwin D. Young
;
Gennadi Bersuker
;
George A. Brown
;
Patrick Lysaght
;
Peter Zeitzoff
;
Robert W. Murto
;
Howard R. Huff
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
57.
ELECTROMIGRATION RELIABILITY ENHANCEMENT OF FLIP CHIP INTERCONNECTS USING CU-DOPED SNPB SOLDER
机译:
使用Cu掺杂SNPB焊料的倒装芯片互连的电迁移可靠性增强
作者:
J. D. Wu
;
C. W. Lee
;
S. Y. Wu
;
Simon Li
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Flip chip interconnects;
Electromigration;
SnPbCu/SnPbNi solders;
Under bump metallization;
58.
Hot-Carrier Stress Induced Low-Frequency Noise Degradation in 0.13μm and 0.18μm RF CMOS Technologies
机译:
热载波应力诱导低频噪声降解0.13μm和0.18μm的RF CMOS技术
作者:
Zhenrong Jin
;
John D. Cressler
;
Wagdi Abadeer
;
Xuefeng Liu
;
Michael Hauser
;
Alvin J. Joseph
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
59.
BIPOLAR SCR ESD PROTECTION IN A 0.25μM Si-Ge PROCESS USING SUB-COLLECTOR REGION MODIFICATION
机译:
双极SCR ESD保护在0.25μm的SI-GE过程中使用子收集器区域修改
作者:
V. A. Vashchenko
;
A. Concannon
;
M. ter Beek
;
P. Hopper
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
60.
Different Approaches for Reliability Enhancement of P-Channel Flash Memory
机译:
P沟道闪存可靠性提高的不同方法
作者:
S. S. Chung
;
Y.-J. Chen
;
H. -W. Tsai
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
61.
EFFECTS of OVERLAYERS on ELECTROMIGRATION RELIABILITY IMPROVEMENT for Cu/LOW K INTERCONNECTS
机译:
叠层对Cu / Low K互连的电迁移可靠性改进的影响
作者:
C.-K. Hu
;
D. Canaperi
;
S. T. Chen
;
L. M. Gignac
;
B. Herbst
;
S. Kaldor
;
M. Krishnan
;
E. Liniger
;
D. L. Rath
;
D. Restaino
;
R. Rosenberg
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Electromigration;
Diffusion;
Cu;
CoWP;
Ta;
62.
Stress Modeling of Cu/Low-k BEoL-Application to Stress Migration
机译:
Cu / Low-K BEOL应用对应力迁移的应力建模
作者:
C. J. Zhai
;
H. W. Yao
;
P. R. Besser
;
A. Marathe
;
R. C. Blish
;
D. Erb
;
C. Hau-Riege
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
63.
Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-k dielectrics
机译:
具有各种复合低k电介质的高级互连结构的有效导热性的测量
作者:
Chen F.
;
Gill J.
;
Harmon D.
;
Sullivan T.
;
Li B.
;
Strong A.
;
Rathore H.
;
Edelstein D.
;
Yang C.-C.
;
Cowley A.
;
Clevenger L.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
thermal conductivity;
VLSI;
current density;
integrated circuit metallisation;
integrated circuit interconnections;
composite materials;
dielectric thin films;
permittivity;
effective thermal conductivity;
advanced interconnect structures;
composite low-k dielectrics;
design groundrules;
thermal behavior;
thermal conductivity;
inter-level dielectric;
practical VLSI applications;
Cu/SiCOH;
Cu/SiLK/sup /spl reg//;
Cu/fluorinated silicate glass;
Cu lines;
Cu vias;
30 to 120 degC;
Cu;
64.
Modeling of NBTI degradation and its impact on electric field dependence of the lifetime
机译:
NBTI降解的建模及其对寿命电场依赖性的影响
作者:
Aono H.
;
Murakami E.
;
Okuyama K.
;
Nishida A.
;
Minami M.
;
Ooji Y.
;
Kubota K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
semiconductor device breakdown;
semiconductor device reliability;
semiconductor device models;
electric breakdown;
NBTI degradation modeling;
electric field dependence;
lifetime;
Negative Bias Temperature Instability;
p-MOSFETs;
stress gate voltages;
empirical models;
kinetic models;
65.
A new breakdown failure mechanism in HfO/sub 2/ gate dielectric
机译:
HFO / SUB 2 /栅极电介质中的新击穿故障机制
作者:
Ranjan R.
;
Pey K.L.
;
Tang L.J.
;
Tung C.H.
;
Groeseneken G.
;
Radhakrishnan M.K.
;
Kaczer B.
;
Degraeve R.
;
De Gendt S.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
hafnium compounds;
dielectric thin films;
permittivity;
electric breakdown;
transmission electron microscopy;
integrated circuit reliability;
CMOS integrated circuits;
breakdown failure mechanism;
HfO/sub 2/ gate dielectric;
constant Voltage stress;
inversion mode;
accumulation mode;
high resolution transmission electron microscopy;
breakdown phenomenon;
dielectric-breakdown-induced epitaxy;
failure defect;
HfO/sub 2/;
HfSi/sub x/;
HfSiO/sub x/;
66.
Enhanced hot-electron performance of strained Si NMOS over unstrained Si
机译:
增强了在未经训练的Si中应变Si NMOS的热电子性能
作者:
Kelly D.Q.
;
Onsongo D.
;
Dey S.
;
Wise R.
;
Cleavelin R.
;
Banerjee S.K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
MOSFET;
silicon;
elemental semiconductors;
Ge-Si alloys;
conduction bands;
effective mass;
interface states;
hot carriers;
integrated circuit reliability;
semiconductor device reliability;
electron mobility;
enhanced hot-electron performance;
strained Si NMOS;
unstrained Si;
strained Si/relaxed Si/sub 1-x/Ge/sub x/ structures;
CMOS performance;
six-fold degeneracy;
conduction band minimum;
electron mobility;
in-plane effective mass;
reduced inter-valley scattering;
Si-SiGe;
67.
RF HCI testing methodology and lifetime model establishment
机译:
RF HCI测试方法和寿命模型建立
作者:
Wee Loon Ng
;
Toledo N.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit testing;
hot carriers;
RF HCI testing methodology;
lifetime model establishment;
hot carrier injection;
DC parameter degradation;
RF parameter;
0.18 mm;
68.
Effect of Magnetic Field on Plasma Damage during VIA Etching in sub-micron CMOS technology
机译:
磁场在亚微米CMOS技术中蚀刻过程中等离子体损伤的影响
作者:
Nam Sung Kim
;
Hyun Gu Yoon
;
Chee Kiat Lee
;
Jing Zhao
;
Chow Yew Tuck
;
Yong Sean Cheah
;
Wong Wing Yew
;
Paul Southworth
;
Sang Hyun Han
;
K. S. Pey
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
69.
THE IMPROVEMENT OF COPPER INTERCONNECT ELECTROMIGRATION RESISTANCE BY CAP/DIELECTIC INTERFACE TREATMENT AND GEOMETRICAL DESIGN
机译:
帽/大型界面处理和几何设计的铜互连电阻改善
作者:
M. H. Lin
;
Y. L. Lin
;
J. M. Chen
;
C. C. Tsai
;
M.-S. Yeh
;
C. C. Liu
;
Steven. Hsu
;
C. H. Wang
;
Y. C. Sheng
;
K. P. Chang
;
K. C. Su
;
Y. J. Chang
;
Tahui Wang
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
70.
ELECTRICAL FAILS SPECIFIC TO PRESSURE COOKER TEST
机译:
电气故障特定于压力炊具测试
作者:
Lovell Wiggins
;
Charles Perry
;
Michel Fausse
;
Kuzuno Masanori
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
71.
Packaging Effect on Reliability for Cu/low k Structures
机译:
包装对Cu /低K结构可靠性的影响
作者:
Guotao Wang
;
Steven Groothuis
;
Paul S. Ho
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Chip-Packaging Interaction;
Cu/Low k dielectric;
Interconnects;
Finite Element Analysis;
Sub-Modeling;
Crack Driving Force;
72.
Technology scaling of critical charges in storage circuits based on cross-coupled inverter-pairs
机译:
基于交叉耦合逆变器对的存储电路临界电荷的技术缩放
作者:
Heijmen T.
;
Kruseman B.
;
van Veen R.
;
Meijer M.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
integrated circuit reliability;
radiation hardening (electronics);
invertors;
flip-flops;
semiconductor storage;
integrated circuit modelling;
technology scaling;
critical charges;
storage circuits;
cross-coupled inverter-pairs;
soft error rate;
reliability issue;
deep-submicron IC design;
SRAM cells;
flip-flops;
circuit simulation;
accelerated SER measurement;
73.
Impact of stress induced leakage current on power-consumption in ultra-thin gate oxides
机译:
应力诱导漏电流对超薄栅极氧化物中功耗的影响
作者:
Lai W.
;
Sune J.
;
Wu E.
;
Nowak E.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
power consumption;
semiconductor device reliability;
percolation;
CMOS integrated circuits;
integrated circuit reliability;
semiconductor device breakdown;
leakage currents;
stress induced leakage current;
power-consumption;
ultra-thin gate oxides;
chip reliability;
lognormal distribution;
Weibull distribution;
74.
Wideband and high reliability RF-MEMS switches using PZT/HfO/sub 2/ multi-layered high K dielectrics
机译:
宽带和高可靠性RF-MEMS开关使用PZT / HFO / SUB 2 /多层高k电介质开关
作者:
Tsaur J.
;
Onodera K.
;
Kobayashi T.
;
Ichiki M.
;
Maeda R.
;
Suga T.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
microswitches;
microwave switches;
lead compounds;
hafnium compounds;
permittivity;
electric breakdown;
leakage currents;
dielectric thin films;
semiconductor device breakdown;
semiconductor device reliability;
PZT/HfO/sub 2/ multi-layered high K dielectrics;
high reliability RF-MEMS switches;
high equivalent dielectric constant;
high switching isolation;
capacitive contact type MEMS switches;
high dielectric constant;
high breakdown voltage;
very low leakage current;
isolation performance;
low power consumption;
dielectric reliability;
charging effects;
leakage current density;
constant bias stressing;
current density;
insertion loss;
one-bridge switches;
10/sup 4/ s;
10/sup -6/ A;
30 GHz;
40 GHz;
50 MHz to 50 GHz;
PZT-HfO/sub 2/;
PbZrO3TiO3-HfO2;
75.
Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories
机译:
相变记忆中相变动力学及其无定形硫属化物分数的分析
作者:
A. Itri
;
D. lelmini
;
A. L. Lacaita
;
A. Pirovano
;
R. Pellizzer
;
R. Bez
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
76.
Dynamic positive bias temperature instability characteristics of ultra-thin HfO/sub 2/ NMOSFET
机译:
动态正偏置温度不稳定性特性超薄HFO / SUB 2 / NMOSFET
作者:
Se Jong Rhee
;
Young Hee Kim
;
Chang Yong Kang
;
Chang Seok Kang
;
Hag-Ju Cho
;
Rino Choi
;
Chang Hwan Choi
;
Akbar M.S.
;
Lee J.C.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
hafnium compounds;
MOSFET;
silicon compounds;
CMOS integrated circuits;
integrated circuit reliability;
semiconductor device breakdown;
semiconductor device reliability;
dynamic positive bias temperature instability characteristics;
ultra-thin HfO/sub 2/ NMOSFET;
dynamic stress;
DC stress;
reduced threshold voltage shift;
maximum transconductance;
subthreshold swing;
stress frequencies;
duty cycles;
larger threshold voltage shift;
HfO/sub 2/;
SiON;
77.
Statistical modeling for post-cycling data retention of split-gate flash memories
机译:
分裂门闪存后循环数据保留的统计建模
作者:
Ling-Chang Hu
;
An-Chi Kang
;
I-Tai Liu
;
Yao-Feng Lin
;
Wu K.
;
Ya-Chin King
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
flash memories;
semiconductor device reliability;
semiconductor device models;
statistical modeling;
post-cycling data retention;
split-gate flash memories;
floating-gate potential;
measured bit-cell-current data;
floating gate charge leakage mechanism;
multiple leakage mechanisms;
stack-gate flash memories;
post-cycling data retention failure bits;
78.
Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects
机译:
屏障/介电界面质量对Cu多孔 - 低k互连可靠性的影响
作者:
Tokei Z.
;
Sutcliffe V.
;
Demuynck S.
;
Iacopi F.
;
Roussel P.
;
Beyer G.P.
;
Hoofman R.J.O.M.
;
Maex K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
dielectric thin films;
diffusion barriers;
integrated circuit reliability;
semiconductor device reliability;
barrier/dielectric interface quality;
reliability;
Cu porous-low-k interconnects;
barrier integrity;
fully dense barrier;
dielectric properties;
79.
INTERFACIAL DEGRADATION MECHANISM OF AU-AL BONDING IN QUAD FLAT PACKAGE
机译:
四扁平包装中Au-al键合的界面降解机理
作者:
Jongwoo Park
;
Back-Sung Kim
;
Hyun-Jun Cha
;
Yong-Bum Jo
;
Sang-Chul Shin
;
Gun-Rae Kim
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
80.
TRANSIENT-LU FAILURE ANALYSIS OF THE ICs, METHODS OF INVESTIGATION AND COMPUTER AIDED SIMULATIONS
机译:
ICS的瞬态-LU故障分析,调查方法和计算机辅助模拟
作者:
K. Domanski
;
S. Bargstadt-Franke
;
W. Stadler
;
M. Streibl
;
G. Steckert
;
W. Bala
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
81.
THE INFLUENCE OF DEEP TRENCH AND SUBSTRATE RESISTANCE ON THE LATCHUP ROBUSTNESS IN A BICMOS SILICON GERMANIUM TECHNOLOGY
机译:
深沟和基板抗性对BICMOS硅锗技术锁定鲁棒性的影响
作者:
Steven H. Voldman
;
Anne Watson
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Latchup;
Silicon Germanium (SiGe);
Silicon Germanium Carbon (SiGeC);
82.
Impact of off-state leakage current on electromigration design rules for nanometer scale CMOS technologies
机译:
断开漏电流对纳米级CMOS技术电迁移设计规则的影响
作者:
Sheng-Chih Lin
;
Basu A.
;
Keshavarzi A.
;
De V.
;
Mehrotra A.
;
Banerjee K.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
integrated circuit design;
leakage currents;
integrated circuit reliability;
integrated circuit interconnections;
nanotechnology;
current density;
off-state leakage current;
electromigration design rules;
nanometer scale CMOS technologies;
electrothermally coupled evaluation;
interconnects lifetime;
interconnect temperature-rise equation;
Joule-heating;
comprehensive design guidelines;
maximum allowable current density;
83.
CARRIER SEPARATION ANALYSIS FOR CLARIFYING LEAKAGE MECHANISM IN UNSTRESSED AND STRESSED HFALO{sub}x/SiO{sub}2 STACK DIELECTRIC LAYERS
机译:
用于澄清泄漏机理的载体分离分析,以防止和应力HFALO {SUB} X / SIO {SUB} 2叠层介电层
作者:
Wataru Mizubayashi
;
Naoki Yasuda
;
Hiroyuki Ota
;
Hirokazu Hisamatsu
;
Koji Tominaga
;
Kunihiko Iwamoto
;
Katsuhiko Yamamoto
;
Tsuyoshi Horikawa
;
Toshihide Nabatame
;
Akira Toriumi
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
84.
The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design
机译:
帽/介质界面处理和几何设计的铜互连电渗透电阻的改进
作者:
Lin M.H.
;
Lin Y.L.
;
Chen J.M.
;
Tsai C.C.
;
Yeh M.-S.
;
Liu C.C.
;
Hsu S.
;
Wang C.H.
;
Sheng Y.C.
;
Chang K.P.
;
Su K.C.
;
Chang Y.J.
;
Tahui Wang
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit metallisation;
integrated circuit interconnections;
electromigration;
integrated circuit design;
Cu interconnect electromigration resistance;
cap/dielectric interface treatment;
geometrical design;
cap-layer deposition;
Cu-silicide formation;
adhesion;
geometrical layout variation;
stress current direction;
Cu;
85.
Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance
机译:
Cu镶嵌互连电迁移的鉴定鉴定等离子处理和屏障电介质对电迁移性能的影响及其影响
作者:
Usui T.
;
Oki T.
;
Miyajima H.
;
Tabuchi K.
;
Watanabe K.
;
Hasegawa T.
;
Shibata H.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
silicon compounds;
copper;
integrated circuit metallisation;
integrated circuit interconnections;
semiconductor-metal boundaries;
electromigration;
integrated circuit testing;
diffusion barriers;
integrated circuit reliability;
electromigration dominant diffusion path;
Cu damascene interconnects;
plasma treatment;
electromigration performance;
electromigration testing pattern;
barrier dielectrics;
interface;
SiC/sub x/N/sub y/;
SiC/sub x/;
lower activation energy;
shorter lifetime;
Cu;
86.
Negative Bias Temperature Instability in Triple Gate Transistors
机译:
三栅极晶体管中的负偏置温度不稳定性
作者:
Shigenobu Maeda
;
Jung-A. Choi
;
Jeong-Hwan Yang
;
You-Seung Jin
;
Su-Kon Bae
;
Young-Wug Kim
;
K. Wang-Pyuk Suh
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Negative bias temperature instability;
NBTI;
Triple gate transistor;
Crystal orientation;
87.
ENHANCED HOT-ELECTRON PERFORMANCE OF STRAINED Si NMOS OVER UNSTRAINED Si
机译:
增强了在未经训练的Si中应变Si NMOS的热电子性能
作者:
D. Q. Kelly
;
D. Onsongo
;
S. Dey
;
R. Wise
;
R. Cleavelin
;
S. K. Banerjee
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
Strained Si;
Hot-electron reliability;
Strain;
MOSFET;
88.
High current characteristics of copper interconnect under transmission-line pulse (TLP) stress and ESD zapping
机译:
透射管线脉冲(TLP)应力和ESD划线下铜互连的高电流特性
作者:
Lee J.H.
;
Shih J.R.
;
Yu K.F.
;
Wu Y.H.
;
Wu J.Y.
;
Yang J.L.
;
Hou C.S.
;
Ong T.C.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
copper;
integrated circuit interconnections;
CMOS integrated circuits;
integrated circuit reliability;
electrostatic discharge;
high current characteristics;
Cu interconnect;
transmission-line pulse stress;
ESD zapping;
failure threshold;
89.
A new channel percolation model for V/sub T/ shift in discrete-trap memories
机译:
用于离散陷阱记忆的v / sum t / shift的新通道渗透模型
作者:
Ielmini D.
;
Compagnoni C.M.
;
Spinelli A.S.
;
Lacaita A.L.
;
Gerardi C.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
percolation;
flash memories;
leakage currents;
CMOS integrated circuits;
integrated circuit modelling;
integrated circuit reliability;
channel percolation model;
V/sub T/ shift;
discrete-trap memories;
numerical model;
staircase charge-loss characteristics;
ultrascaled devices;
90.
Polarity dependence of charge trapping in poly-silicon gate HfO/sub 2/ MOSFETs
机译:
电荷捕获在多晶硅栅极HFO / SUB 2 / MOSFET中的极性依赖性
作者:
Bu M.
;
Wang X.W.
;
Guo D.C.
;
Song L.Y.
;
Ma T.P.
;
Tseng H.
;
Tobin P.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
hafnium compounds;
MOSFET;
semiconductor device breakdown;
semiconductor device reliability;
interface states;
interface structure;
hole traps;
electron traps;
dielectric thin films;
polarity dependence;
charge trapping;
poly-silicon gate HfO/sub 2/ MOSFETs;
stress-induced threshold voltage shift;
transconductance degradation;
nMOSFETs;
pMOSFETs;
substrate injection;
electron trapping;
hole trapping;
HfO/sub 2/;
91.
Hot-carrier stress induced low-frequency noise degradation in 0.13 /spl mu/m and 0.18 /spl mu/m RF CMOS technologies
机译:
热载波应力诱导0.13 / SPL MU / M和0.18 / SPL MU / M RF CMOS技术的低频噪声降解
作者:
Zhenrong Jin
;
Cressler J.D.
;
Abadeer W.
;
Xuefeng Liu
;
Hauser M.
;
Joseph A.J.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
hot carriers;
integrated circuit reliability;
integrated circuit noise;
integrated circuit modelling;
hot-carrier stress induced low-frequency noise degradation;
0.18 /spl mu/m RF CMOS technologies;
0.13 /spl mu/m RF CMOS technologies;
0.13 micron;
0.18 micron;
92.
RELIABILITY OF SILICON NITRIDE DIELECTRIC-BASED METAL-INSULATOR-METAL CAPACITORS
机译:
氮化硅电介质基金属 - 绝缘金属电容器的可靠性
作者:
Thomas Remmel
;
Rampi Ramprasad
;
Doug Roberts
;
Mark Raymond
;
Matthew Martin
;
Douglas Quails
;
Eric Luckowski
;
Sharanda Braithwaite
;
Mel Miller
;
James Walls
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MIM capacito;
Reliability;
TDDB;
Silicon nitride;
Wafer-scale;
Voltage acceleration model;
93.
CMOS TRANSISTOR ELECTRICAL AGEING EXPERIMENTS TO BUILD VHDL-AMS BEHAVIORAL MODELS
机译:
CMOS晶体管电动老化实验构建VHDL-AMS行为模型
作者:
Benoit Mongellaz
;
Francois Marc
;
Yves Danto
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
94.
Pattern Density Effect of Trench Isolation-Induced Mechanical Stress on Device Reliability in sub-0.1μm Technology
机译:
沟槽隔离诱导的机械应力对亚01μm技术装置可靠性的图案密度效应
作者:
J. R. Shih
;
Robin Wang
;
Y. M. Sheu
;
H. C. Lin
;
J. J. Wang
;
Kenneth Wu
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
95.
Effects of gate electrodes and barrier heights on the breakdown characteristics and Weibull slopes of HfO/sub 2/ MOS devices
机译:
栅电极和屏障高度对HFO / SUB 2 / MOS装置的击穿特性和威布尔斜面的影响
作者:
Kim Y.H.
;
Choi R.
;
Jha R.
;
Lee J.H.
;
Misra V.
;
Lee J.C.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
hafnium compounds;
MOSFET;
dielectric thin films;
silicon compounds;
semiconductor device breakdown;
semiconductor device reliability;
Weibull distribution;
interface states;
interface structure;
work function;
gate electrodes;
barrier heights;
breakdown characteristics;
Weibull slopes;
HfO/sub 2/ MOS devices;
smaller charge fluence;
relatively higher barrier height;
SiO/sub 2/;
gate stack structure;
bi-modal defect generation rate;
two-steps breakdown process;
barrier height;
gate electrode workfunction;
96.
PMOS NBTI-induced circuit mismatch in advanced technologies
机译:
PMOS NBTI引起的电路在先进技术中不匹配
作者:
Agostinelli M.
;
Lau S.
;
Pae S.
;
Marzolf P.
;
Muthali H.
;
Jacobs S.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
integrated circuit reliability;
CMOS analogue integrated circuits;
PMOS NBTI-induced circuit mismatch;
advanced technologies;
negative bias temperature instability;
analog circuits;
90 nm;
97.
Modeling and verification of single event transients in deep submicron technologies
机译:
深度亚微米技术中单事件瞬变的建模与验证
作者:
Gadlage M.J.
;
Schrimpf R.D.
;
Benedetto J.M.
;
Eaton P.H.
;
Turflinger T.L.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
radiation hardening (electronics);
SPICE;
integrated circuit modelling;
integrated circuit reliability;
single event transients;
deep submicron technologies;
device feature sizes;
digital circuits;
smaller parasitics;
single event effects;
ionizing particle;
propagation distance;
98.
Mechanism for reduced NBTI effect under pulsed bias stress conditions
机译:
在脉冲偏压应力条件下降低NBTI效应的机制
作者:
Zhu B.
;
Suehle J.S.
;
Bernstein J.B.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
MOSFET;
semiconductor device breakdown;
semiconductor device reliability;
hole traps;
annealing;
interface states;
reduced NBTI effect;
pulsed bias stress conditions;
critical time constants;
hole trapping;
hole detrapping processes;
two time constant model;
pulse repetition frequency;
99.
Reliability and microstructure of lead-free solder die attach interface in silicon power devices
机译:
无铅焊料模具连接界面在硅功率装置中的可靠性和微观结构
作者:
Huff D.
;
Katsis D.
;
Stinson-Bagby K.
;
Thacker T.
;
Lu G.-Q.
;
van Wyk J.D.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
soldering;
integrated circuit reliability;
semiconductor device reliability;
power semiconductor devices;
power integrated circuits;
elastic deformation;
plastic deformation;
thermal expansion;
creep;
reliability;
microstructure;
lead-free solder die attach interface;
Si power devices;
electronic consumer products;
failure mechanisms;
thermal stress;
sustained high temperature work;
die-attach layer;
power semiconductors;
strain mechanisms;
creep;
elastic deformation;
plastic deformation;
100.
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
机译:
用Cu / PECVD低k BEOL对90nm CMOS技术的综合可靠性评估
作者:
Edelstein D.
;
Rathore H.
;
Davis C.
;
Clevenger L.
;
Cowley A.
;
Nogami T.
;
Agarwala B.
;
Arai S.
;
Carbone A.
;
Chanda K.
;
Chen F.
;
Cohen S.
;
Cote W.
;
Cullinan M.
;
Dalton T.
;
Das S.
;
Davis P.
;
Demarest J.
;
Dunn D.
;
Dziobkowski C.
;
Filippi R.
;
Fitzsimmons J.
;
Flaitz P.
;
Gates S.
;
Gill J.
;
Grill A.
;
Hawken D.
;
Ida K.
;
Klaus D.
;
Klymko N.
;
Lane M.
;
Lane S.
;
Lee J.
;
Landers W.
;
Li W.-K.
;
Lin Y.-H.
;
Liniger E.
;
Liu X.-H.
;
Madan A.
;
Malhotra S.
;
Martin J.
;
Molis S.
;
Muzzy C.
;
Nguyen D.
;
Nguyen S.
;
Ono M.
;
Parks C.
;
Questad D.
;
Restaino D.
;
Sakamoto A.
;
Shaw T.
;
Shimooka Y.
;
Simon A.
;
Simonyi E.
;
Swift A.
;
Van Kleeck T.
;
Vogt S.
;
Wang Y.-Y.
;
Wille W.
;
Wright J.
;
Yang C.-C.
;
Yoon M.
;
Ivers T.
会议名称:
《Annual IEEE International Reliability Physics Symposium》
|
2004年
关键词:
CMOS integrated circuits;
integrated circuit reliability;
electromigration;
electric breakdown;
integrated circuit interconnections;
integrated circuit metallisation;
chip scale packaging;
flip-chip devices;
permittivity;
dielectric thin films;
copper;
silicon compounds;
comprehensive reliability evaluation;
90 nm CMOS technology;
Cu/PECVD low-k BEOL;
integration;
development;
Cu Back-End of Line;
PECVD low-k organosilicate glass;
carbon-doped oxide;
high-volume manufacturing;
extendibility;
next-generation smaller dimensions;
cap mechanical strengths;
electrical strengths;
chemical strengths;
optimized Cu metallization;
chip-package reliability;
kerf design;
packaging materials;
dielectric material;
interface improvements;
redundancy;
potential chip-packaging failures;
chip-package reliability stress testing;
multiple wirebond;
flip-chip packages;
electromigration;
stress-migration;
time-dependent dielectric breakdown;
thermal cycling;
temperature-humidity-bias;
functional stressing;
130 nm;
90 nm;
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