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Conference on gallium nitride materials and devices X

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1.Advances in single mode and high power AlGaInN laser diode technology for systems applications

机译：用于系统应用的单模和高功率ALALAIN激光二极管技术的进步
- 作者：Stephen P. Najda;Piotr Perlin;Tadek Suski;Lujca Marona;Mike Bockowski;Mike Leszczynski;Przemek Wisniewski;Robert Czernecki;Robert Kucharski;Grzegorz Targowski;Julita Smalc-Koziorowska;Szymon Stanczyk;Scott Watson;Antony E.Kelly
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN laser;
- GaN array;
- GaN systems;
2.Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

机译：非极性种子的Homoepitaxial HVPE GaN生长
- 作者：M. Amilusik;T. Sochacki;B. Lucznik;M. Fijalkowski;M. Iwinska;J.L. Weyher;E. Grzanka;P.Krupczynska;A. Khachapuridze;I. Grzegory;M. Bockowski
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- HVPE;
- GaN;
- non-polar GaN;
- semi-polar GaN;
- homoepitaxy;
3.Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

机译：通过无AU-On-Si加工GaN的电子模式架构（嵌入式Mishemt和P-GaN Hemts）的直接比较
- 作者：Denis Marcon;Marleen Van Hove;Brice De Jaeger;Niels Posthuma;Dirk Wellekens;Shuzhen You;Xuanwu Kang;Tian-Li Wu;Maarten Willems;Steve Stoffels;Stefaan Decoutere
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- e-mode;
- 200mm GaN-on-Si;
- Au free;
4.High power UV-B LEDs with long lifetime

机译：高功率UV-B LED，寿命长
- 作者：Jens Rass;Tim Kolbe;Neysha Lobo Ploch;Tim Wernicke;Frank Mehnke;Christian Kuhn;Johannes Enslin;Martin Guttmann;Christoph Reich;Anna Mogilatenko;Johannes Glaab;Christoph Stoelmacker;Mickael Lapeyrade;Sven Einfeldt;Markus Weyers;Michael Kneissl
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- UV-LED;
- AlGaN;
- lifetime;
- UV-B;
- electroluminescence;
- MOVPE;
5.Status and future of GaN-based vertical-cavity surface-emitting lasers

机译：基于GaN的垂直腔表面发射激光器的状态和未来
- 作者：Daniel Feezell
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Gallium nitride;
- GaN;
- vertical-cavity surface-emitting laser;
- VCSEL;
- nonpolar;
- m-plane;
- photoelectrochemical etching;
6.Enhancement of optical and structural quality of semipolar(1122) GaN by introducing nanoporous SiNx interlayers

机译：通过引入纳米孔SINX中间层来增强半极性（1122）GaN的光学和结构质量
- 作者：Morteza Monavarian;Sebastian Metzner;Natalia Izyumskaya;Marcus Mueller;Serdal Okur;Fan Zhang;Nuri Can;Saikat Das;Vitaliy Avrutin;UEmit OEzguer;Frank Bertram;Juergen Christen;Hadis Morkoc
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- semipolar;
- ELO;
- SiN_x nano-mesh;
- photoluminescence;
- x-ray diffraction;
- MOCVD;
- quantum confined Stark effect;
7.Spatial variations of optical properties of semipolar InGaN quantum wells

机译：Semipolar Ingan量子阱光学性质的空间变化
- 作者：Saulius Marcinkevicius;Kristina Gelzinyte;Ruslan Ivanov;Yuji Zhao;Shuji Nakamura;Steven P. DenBaars;James S. Speck
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- InGaN;
- quantum well;
- semipolar;
- photoluminescence;
- near-field;
- SNOM;
- LED;
8.Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

机译：温度依赖性光致发光瞬变InGaN LED的有源区维度和量子效率
- 作者：Nuri Can;Serdal Okur;Morteza Monavarian;Fan Zhang;Vitaliy Avrutin;Hadis Morkoc;Ali Teke;UEmit OEzguer
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- InGaN;
- light emitting diodes;
- time-resolved photoluminescence;
- recombination dynamics;
- quantum efficiency;
9.Strong carrier localization in stacking faults in semipolar (1122) GaN

机译：在Semipolar堆叠故障中的强大载波定位（1122）GaN
- 作者：Serdal Okur;Morteza Monavarian;Saikat Das;Natalia Izyumskaya;Fan Zhang;Vitaliy Avrutin;Hadis Morkoc;UEmit OEzguer
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- MOCVD;
- semipolar;
- stacking faults;
- recombination dynamics;
- carrier localization;
10.Stress related aspects of GaN technology physics

机译：GaN技术物理的应力相关方面
- 作者：Ephraim Suhir
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN technology;
- GaN assemblies;
- analytical modeling;
- thermal mismatch;
- lattice mismatch;
- stress analysis;
11.Current spreading in UV-C LEDs emitting around 235 nm

机译：电流在UV-C LED中发出左右235 nm
- 作者：Mickael Lapeyrade;Florian Eberspach;Johannes Glaab;Neysha Lobo-Ploch;Christoph Reich;Christian Kuhn;Martin Guttmann;Tim Wernicke;Frank Mehnke;Sven Einfeldt;Arne Knauer;Markus Weyers;Michael Kneissl
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- UV-C LED;
- geometry;
- AlGaN;
- current spreading;
- MOVPE;
- ELO AlN/sapphire;
12.Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

机译：AlGaN / GaN电源HEMTS中捕获与钢铁和碳掺杂相关的过程
- 作者：M. Meneghini;D. Bisi;I. Rossetto;C. De Santi;A. Stocco;O. Hilt;E. Bahat Treidel;J. Wuerfl;F. Rampazzo;G. Meneghesso;E. Zanoni
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- HEMT;
- trapping;
- defects;
- doping;
13.High efficiency UV LEDs on sapphire

机译：蓝宝石高效紫外线LED
- 作者：Max Shatalov;Rakesh Jain;Alex Dobrinsky;Wenhong Sun;Yuri Bilenko;Jinwei Yang;Michael Shur;Remis Gaska
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- ultraviolet;
- light-emitting;
- efficiency;
- nitride;
14.Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si

机译：Ultralow阈值在Si上电注入AlGaN纳米线紫外线激光器
- 作者：K. H. Li;X. Liu;S. Zhao;Q. Wang;Z. Mi
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- UV random lasing;
- ultralow threshold;
- AlGaN nanowire;
- electrical injection;
15.Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

机译：GaN基板上基于混合Ingan的微胶囊的强激子 - 光子耦合
- 作者：Serdal Okur;Alexander Franke;Fan Zhang;Vitaliy Avrutin;Hadis Morkoc;Frank Bertram;Juergen Christen;UEmit OEzguer
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Vertical cavities;
- polaritons;
- InGaN;
16.Investigation of facet-dependent InGaN growth for core-shell LEDs

机译：对核心壳LED的刻面IngaN生长调查
- 作者：Ionut Girgel;Paul R. Edwards;Emmanuel Le Boulbar;Duncan W. E. Allsopp;Robert W. Martin;Philip A. Shields
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- core-shell;
- InGaN;
- m-plane;
- non-polar;
- cathodoluminescence;
- nanowires;
17.HVPE growth of Al_xGa_(1-x)N templates for UV-LED applications

机译：用于UV-LED应用的AL_XGA_（1-X）N模板的HVPE生长
- 作者：Chi-Tsung Tsai;Jia-Hao Liang;Tsung-Yen Tsai;Ray-Hua Horng;Dong-Sing Wuu
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- AlGaN template;
- HVPE;
- ultraviolet;
- LED;
- optical;
- transmittance;
- internal quantum efficiency;
18.Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

机译：基于（GA）N / GaN纳米线合奏的发光二极管深层瞬态光谱
- 作者：M. Musolino;M. Meneghini;L. Scarparo;C. De Santi;A. Tahraoui;L. Geelhaar;E. Zanoni;H. Riechert
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- DLTS on nanowires;
- Deep level traps in GaN;
- Ⅲ-N light emitting diodes;
- Molecular beam epitaxy;
- GaN nanowires;
- DLTS;
19.InGaN Power Laser Chips in a Novel 50W Multi-Die Package

机译：IngaN电源激光芯片在新型50W多模包装中
- 作者：Andreas Loeffler;Christoph Eichler;Jens Mueller;Sven Gerhard;Bernhard Stojetz;Soenke Tautz;Clemens Vierheilig;Jelena Ristic;Adrian Avramescu;Markus Horn;Thomas Hager;Christoph Walter;Thomas Dobbertin;Harald Koenig;Uwe Strauss
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- InGaN;
- c-plane;
- blue laser;
- injection efficiency;
- output power;
- power conversion efficiency;
- multi-die package;
20.Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques

机译：通过各种装置表征技术分析IngaN / GaN发光二极管的非接种重组机制
- 作者：Dong-Soo Shin;Dong-Pyo Han;Dong-Guang Zheng;Chan-Hyoung Oh;Hyunsung Kim;Kyu-Sang Kim;Jong-In Shim
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Light-emitting diode;
- nonradiative recombination;
- defect;
- InGaN;
- temperature-dependent electroluminescence;
21.Present and future of GaN power devices and their applications

机译：GaN电源设备及其应用的现状与未来
- 作者：Daisuke Ueda
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- NSJ;
- Natural super junction;
- GIT;
- Gate Injection Transistor;
- Bidirectional switch;
- Drive-by Microwave;
22.Semi/non-polar nitride quantum wells for high-efficient light emitters

机译：用于高效光发射器的半/非极性氮化物量子孔
- 作者：Mitsuru Funato;Yoichi Kawakami
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Semipolar;
- Nonpolar;
- InGaN;
- AlGaN;
- Quantum wells;
23.Indium-incorporation efficiency in semipolar (1122) oriented InGaN-based light emitting diodes

机译：半极性掺入效率（1122）取向基于IngaN的发光二极管
- 作者：Morteza Monavarian;Sebastian Metzner;Natalia Izyumskaya;Serdal Okur;Fan Zhang;Nuri Can;Saikat Das;Vitaliy Avrutin;UEmit OEzguer;Frank Bertram;Juergen Christen;Hadis Morkoc
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- semipolar;
- indium incorporation;
- photoluminescence;
- light emitting diode;
- quantum confined stark effect;
24.Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

机译：扩散中的垂直激励曲线注入多量子孔发光二极管结构
- 作者：L. Riuttanen;P. Kivisaari;O. Svensk;T. Vasara;P. Myllys;J. Oksanen;S. Suihkonen
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Ⅲ-nitrides;
- diffusion injection;
- light-emitting diodes;
25.X-ray diffraction study of A- plane non polar InN epilayer grown by MOCVD

机译：MOCVD生长的平面非极性旅馆癫痫仪的X射线衍射研究
- 作者：Matthieu MORET;Olivier BRIOT;Bernard GIL
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Indium Nitride;
- Non polar;
- X ray diffraction;
- Reciprocal space mapping;
26.Efficiency droop in nitride LEDs revisited: Impact of excitonic recombination processes

机译：氮化物LED中的效率下垂重新吻合：激子重组过程的影响
- 作者：A. Hangleiter;T. Langer;M. Gerhard;D. Kalincev;A. Kruse;H. Bremers;U. Rossow;M. Koch
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- group-Ⅲ nitrides;
- quantum wells;
- time-resolved photoluminescence;
- efficiency droop;
27.Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence

机译：通过稳态和时间分辨光致发光识别HVPE-生长的GaN中的点缺陷
- 作者：M. A. Reshchikov;D. O. Demchenko;A. Usikov;H. Helava;Yu. Makarov
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- photoluminescence;
- point defects;
- GaN;
- HVPE;
28.Enhancement of AlGaN/GaN High-Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

机译：通过背面质子辐射增强AlGaN / GaN高电子迁移率晶体管断开状态漏极击穿电压
- 作者：F. Ren;Y.-H. Hwang;S. J. Pearton;Erin Patrick;Mark E. Law
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
29.Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

机译：电子阻挡层在365-nm紫外发光二极管中的影响数值分析
- 作者：Fang-Ming Chen;Jih-Yuan Chang;Yen-Kuang Kuo;Bing-Cheng Lin;Hao-Chung Kuo
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- ultraviolet light-emitting diodes;
- electron blocking layer;
- polarization;
30.Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

机译：IngaN多量子阱中相干声学声子的增强
- 作者：Shopan Hafiz;Fan Zhang;Morteza Monavarian;Vitaliy Avrutin;Hadis Morkoc;UEmit OEzguer
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- InGaN MQWs;
- coherent acoustic phonons;
- time-resolved differential transmission;
- phonon cavity;
31.Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

机译：IngaN / GaN点纳米纳米结构的有序阵列作为单光子发射器
- 作者：Snezana Lazic;Ekaterina Chernysheva;Zarko Gacevic;Noemi Garcia-Lepetit;Herko P. van der Meulen;Marcus Mueller;Frank Bertram;Peter Veit;Juergen Christen;Almudena Torres-Pardo;Jose M. Gonzalez Calbet;Enrique Calleja;Jose M. Calleja
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN/InGaN nanowire-quantum dots;
- single photon source;
- polarized emission;
32.Photocathode electron beam sources using GaN and InGaN with NEA surface

机译：光电阴极电子束源使用GaN和IngaN与Nea表面
- 作者：T. Nishitani;T. Maekawa;M. Tabuchi;T. Meguro;Y. Honda;H. Amano
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Photocathode;
- NEA surface;
- Electron beam;
- GaN;
- InGaN;
33.Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

机译：（1-101） - oriented半极性AlGaN / GaN MQWS的温度依赖性时间分辨光致发光测量
- 作者：Daniel Rosales;Bernard Gil;Morteza Monavarian;Fan Zhang;Serdal Okur;Natalia Izyumskaya;Vitaliy Avrutin;UEmit OEzguer;Hadis Morkoc
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- AlGaN;
- quantum wells;
- metal-organic chemical vapor deposition;
- semi-polar orientation;
- quantum confined Stark effect;
- UV LEDs;
34.Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

机译：琥珀色发光的光致发光行为Gainn-GaN异质结构
- 作者：Huong Thi Ngo;Daniel Rosales;Bernard Gil;Pierre Valvin;Benjamin Damilano;Kaddour Lekhal;Philippe de Mierry
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Wide band gap semiconductors;
- nitrides;
- visible light emitters;
- photoluminescence;
35.Progress of high-power deep-ultraviolet LEDs

机译：高功率深紫色LED的进展
- 作者：A. Fujioka;K. Asada;H. Yamada;T. Ohtsuka;T. Ogawa;T. Kosugi;D. Kishikawa;T. Mukai
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- light-emitting diode;
- deep-ultraviolet;
- AlGaN;
- nitride semiconductor;
- 280 nm;
36.Optical properties of small GaN/Al_(0.5)Ga_(0.5)N quantum dots grown on (11-22) GaN templates

机译：小GaN / AL_（0.5）GA_（0.5）N量子点的光学性质（11-22）GAN模板
- 作者：Julien Selles;Daniel Rosales;Bernard Gil;Guillaume Cassabois;Thierry Guillet;Julien Brault;Benjamin Damilano;Philippe Vennegues;Philippe de Mierry;Jean Massies
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- AlGaN;
- self-assembled nanostructures;
- molecular beam epitaxy;
- polar and semi-polar orientations;
- quantum confined Stark effect;
- UV LEDs;
37.Optical properties and band structure of highly-doped gallium nitride

机译：高掺杂氮化镓的光学性质和带结构
- 作者：Ruediger Goldhahn;Karsten Lange;Martin Feneberg
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- GaN;
- dielectric function;
- effective electron mass;
- high-electron density;
- L-valley of the conduction band;
38.Study of Interface State Trap Density on Characteristics of MOS-HEMT

机译：界面状态陷阱密度对MOS-HEMT特性的研究
- 作者：Ming-Chun Tseng;Ming-Hsien Hung;Dong-Sing Wuu;Ray-Hua Horng
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- chemical treatment;
- capacitors;
- high electron mobility transistor;
- interface state trap densities;
39.Study of efficiency droop in InGaN/GaN light emitting diodes with Ⅴ-shape pits

机译：用ⅴ形凹坑的IngaN / GaN发光二极管效率下垂的研究
- 作者：Chiao-Yun Chang;Heng Li;Tien-Chang Lu
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Ⅴ-pit defect;
- internal quantum efficiency (IQE);
- droop efficency;
40.InGaN LEDs prepared on β-Ga_2O_3 (201) substrates

机译：IngaN LED在β-GA_2O_3（201）基板上准备
- 作者：Kazuyuki Iizuka;Yoshikatsu Morishima;Akito Kuramata;Yu-Jiun Shen;Chang-Yu Tsai;Ying-Yong Su;Gavin Liu;Ta-Cheng Hsu;J.H. Yeh
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Light-emitting diode (LED);
- gallium oxide (Ga_2O_3);
- gallium nitride (GaN);
- high-power LED;
- crystal growth;
41.Ammonothermal Growth of Polar and Non-polar Bulk GaN Crystal

机译：极性和非极性散装GaN晶体的氨热量生长
- 作者：Yutaka Mikawa;Takayuki Ishinabe;Shinichiro Kawabata;Tae Mochizuki;Atsuhiko Kojima;Yuji Kagamitani;Hideo Fujisawa
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- acidic ammonothermal;
- bulk GaN growth;
- supercritical ammonia;
- SCAAT;
- non-polar;
42.Bipolar Monte Carlo simulation of electrons and holes in Ⅲ-N LEDs

机译：Ⅲ-N LED中的电子和孔的Bipolar Monte Carlo仿真
- 作者：Pyry Kivisaari;Toufik Sadi;Jani Oksanen;Jukka Tulkki
- 会议名称：《Conference on gallium nitride materials and devices X》 | 2015年
- Ⅲ-Nitride LEDs;
- Monte Carlo simulations;
- Efficiency droop;
- Carrier transport;
- Hot carriers;
- Auger recombination;