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首页> 外文期刊>Physics of the solid state >Electrical, Optical, and Photoelectric Properties of Electron-Irradiated Indium-Doped Cadmium Sulfide Single Crystals
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Electrical, Optical, and Photoelectric Properties of Electron-Irradiated Indium-Doped Cadmium Sulfide Single Crystals

机译:电子辐照的铟掺杂硫化镉单晶的电,光和光电性能

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摘要

The effect of irradiation by 1.2-MeV electrons to a dose Φ = 2 * 10~(17) cm~(-2) on the electrical, optical, and photoelectric properties of In-doped CdS single crystals was studied. The experimental data obtained permit one to conclude that irradiation initiates decomposition of the supersaturated In solution in CdS, with the indium atoms at the sites of the cation sublattice being expelled by cadmium interstitial atoms. New slow-recombination centers were observed to exist in the irradiated CdS:In samples, with the maxima of optical quenching of the photoconductivity lying in the region of λ_(M_1) = 0.75 μm and λ_(M_2) = 1.03 μm. It is suggested that the new recombination centers are related to complexes containing cadmium vacancies and indium atoms.
机译:研究了1.2MeV电子辐照Φ= 2 * 10〜(17)cm〜(-2)对In掺杂CdS单晶的电学,光学和光电性能的影响。获得的实验数据使我们可以得出这样的结论:辐照引发CdS中过饱和In溶液的分解,阳离子亚晶格位点的铟原子被镉间隙原子排出。观察到新的慢速复合中心存在于被辐照的CdS中:在样品中,光电导的光猝灭最大值位于λ_(M_1)= 0.75μm和λ_(M_2)= 1.03μm的区域中。建议新的重组中心与含有镉空位和铟原子的配合物有关。

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