Prediction of organic low-k material etching in two frequency capacitively coupled plasma

Ishihara K; Shimada T; Yagisawa T; Makabe T

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Prediction of organic low-k material etching in two frequency capacitively coupled plasma

机译：两种频率电容耦合等离子体中有机低k材料蚀刻的预测

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Low-k materials are among the promising interlayer dielectric in terms of reducing the circuit transmission time. H-2/N-2 plasma is currently considered to be appropriate for organic low-k material etching, with both N and H radicals playing important roles on the feature profile of the etching. We have numerically estimated the influence of active species on the feature profile evolution of an organic low-k by changing the H-2/N-2 mixture ratio by using a hybrid numerical model (extended-Vic-Address), through the predictive image of the two frequency capacitively coupled plasma in H-2/N-2. We also discuss typical external plasma conditions producing a taper and bowing profiles. The predicted etch rate and feature profile reasonably reproduce the previous experimental results.

机译：就减少电路传输时间而言，低k材料是很有希望的层间电介质。 H-2 / N-2等离子体目前被认为适用于有机低k材料蚀刻，N和H自由基在蚀刻的特征轮廓上都起着重要作用。我们通过预测图像，通过使用混合数值模型（扩展的Vic-Address）来改变H-2 / N-2的混合比，从而通过数值估计了活性物种对有机低k特征轮廓演变的影响。 H-2 / N-2中两个频率的电容耦合等离子体的关系。我们还讨论了产生锥形和弯曲轮廓的典型外部等离子体条件。预测的蚀刻速率和特征轮廓合理地再现了先前的实验结果。

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《Plasma physics and controlled fusion》 |2006年第0期|共6页
作者
Ishihara K; Shimada T; Yagisawa T; Makabe T;
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正文语种 eng
中图分类等离子体物理学;
关键词
N-2-H-2 FLOWING DISCHARGES; CONSISTENT KINETIC-MODEL; LOW DIELECTRIC FILM; N-2/H-2; GASES;

机译：N-2-H-2流动放电;一致的动力学模型;低介电膜;N-2 / H-2;气体;

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专利

1. Prediction of organic low-k material etching in two frequency capacitively coupled plasma [J] . Ishihara K, Shimada T, Yagisawa T, Plasma physics and controlled fusion . 2006,第0期

机译：两种频率电容耦合等离子体中有机低k材料蚀刻的预测
2. Effect of C:F Deposition on Etching of SiCOH Low-k Films in CHF3 60 MHz/2 MHz Dual-Frequency Capacitively Coupled Plasma [J] . Shi GF, Ye C, Xu YJ, Plasma Science & Technology . 2010,第4期

机译：C：F沉积对CHF3 60 MHz / 2 MHz双频电容耦合等离子体中SiCOH低k膜蚀刻的影响
3. Effect of C：F Deposition on Etching of SiCOH Low-k Films in CHF3 60 MHz/2 MHz Dual-Frequency Capacitively Coupled Plasma [J] . 施国峰, 叶超, 徐轶君, 等离子体科学和技术：英文版 . 2010,第004期

机译：C：F沉积对CHF3 60 MHz / 2 MHz双频电容耦合等离子体中SiCOH低k膜蚀刻的影响
4. Modeling of N/sub 2//H/sub 2/ plasma for low-K material etching in a capacitively coupled plasma device [C] . Shon, C.H., Makabe, . 2003

机译：N / sub 2 // H / sub 2 /等离子体在电容耦合等离子体设备中用于低K材料蚀刻的建模
5. Rational design of non-damaging capacitively coupled plasma etching and photoresist stripping processes for ultralow k dielectric materials. [D] . Kuo, Ming-Shu. 2010

机译：合理设计超低k介电材料的无损电容耦合等离子体蚀刻和光刻胶剥离工艺。
6. Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C [O] . R. Chanson, L. Zhang, S. Naumov, -1

机译：在−50°C以上的条件下使用微毛细管冷凝对多孔有机硅低k进行无损等离子体刻蚀
7. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model [O] . Banat Gul 2015

机译：电容耦合HBR / HE，HBR / AR等离子体蚀刻应用的比较研究：流体模型的数值研究
8. Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System; Solid State and Materials Science [R] . Abernathy, C. R. , Hobson, W. S. , Hong, J. , 1998

机译：InGaalp复合半导体系统的电感耦合等离子体和电子回旋共振等离子体刻蚀;固态和材料科学

Prediction of organic low-k material etching in two frequency capacitively coupled plasma

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