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首页> 外文期刊>Plasma physics and controlled fusion >Impact of the edge pedestal characteristics on the integrated performance in advanced tokamak operation modes in JT-60U
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Impact of the edge pedestal characteristics on the integrated performance in advanced tokamak operation modes in JT-60U

机译：JT-60U中先进托卡马克操作模式下边缘基座特性对综合性能的影响

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摘要

Characteristics of the edge pedestal has been studied for the high beta(p) ELMy H mode and the reversed shear ELMy H mode in JT-60U. The contribution of the pedestal is around 20% for the confinement improvement factor, the normalized beta, and the bootstrap fraction. The upper boundary of the fusion performance measure G(=H-89 beta(N)/q(95)(2)) increases with the pedestal poloidal beta, beta(p)-ped. At high triangularity, delta, beta(p)-ped increases with the total beta(p) (beta(p)-tot) almost linearly for positive shear type I ELMy discharges. This dependence is not due to the profile stiffness, since the dependence is the same for the discharges both with and without an internal transport barrier (ITB). In the reversed shear ELMy H mode, beta(p)-ped increases with beta(p)-tot on the same line as the positive shear cases except at high q(95) = 8-9.3. In the high plasma current regime, the final structure with both an ITB and edge transport barrier seems to be determined by the balance between the expanding ITB-foot radius and deepening ELM penetration: the ELM penetration radius deepens with increasing pedestal stored energy and then reaches the ITB-foot radius. The ITB-foot seems to behave as a barrier against the ELM crash penetration, and shrinks after a few ELM attacks, and the ELM penetration follows the shrinking ITB-foot.
机译：对于JT-60U中的高beta（p）ELMy H模式和反向剪切ELMy H模式，已经研究了边缘基座的特性。对于约束改善因子，标准化的beta和自举分数，基座的贡献约为20％。融合性能量度G（= H-89 beta（N）/ q（95）（2））的上限随基座极向性β（beta（p）-ped）的增加而增加。在高三角形度下，对于正剪切类型I ELMy放电，δ，β（p）-ped随总β（p）（β（p）-tot）几乎呈线性增加。这种依赖性不是由于轮廓刚度引起的，因为对于具有和不具有内部传输屏障（ITB）的放电，其依赖性都是相同的。在反向剪切ELMy H模式下，除了在高q（95）= 8-9.3的情况下，与正剪切情况相同，β（p）-ped随β（p）-tot增加。在高等离子电流状态下，具有ITB和边缘传输势垒的最终结构似乎取决于扩大的ITB脚半径和加深的ELM穿透之间的平衡：ELM穿透半径随着基座存储能量的增加而加深，然后达到ITB英尺半径。 ITB脚似乎充当了阻止ELM崩溃的屏障，并且在几次ELM攻击后逐渐缩小，而ELM的渗透率随ITB脚的缩小而减小。

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