A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

Yasunori Yonekuta; Kenji Honda; Hiroyuki Nishide

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A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

机译：一种由聚（氮氧自由基）和银盐层制成的非易失性，双稳态和可重写存储器

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A non-volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p-dopable material, while the silver salt-dispersed PMMA layer acted as an n-dopable material. The ON-OFF ratio between low-conductivity and high-conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 103 sec. The device was characterized by excellent rewritability.

机译：用含银的聚（2,2,6,6-四甲基哌啶-1-氧基甲基丙烯酸酯）（PTMA）和聚（甲基丙烯酸甲酯）（PMMA）的层成功地制造了一种非易失性，双稳态且可重写的有机存储设备盐。 PTMA层用作p型可掺杂材料，而分散有银盐的PMMA层用作n型可掺杂材料。低电导率状态与高电导率状态之间的开关比大于四个数量级，并且保持时间长于103秒。该设备具有出色的可重写性。

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来源
《Polymers for advanced technologies》 |2008年第4期|共4页
作者
Yasunori Yonekuta; Kenji Honda; Hiroyuki Nishide;
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正文语种 eng
中图分类高分子化学（高聚物）;
关键词
Radical polymer; Nitroxide radical; Polymer memory; I-V characteristics;

机译：自由基聚合物;一氧化氮自由基;聚合物记忆;IV特性;

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专利

1. A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers [J] . Yasunori Yonekuta, Kenji Honda, Hiroyuki Nishide Polymers for advanced technologies . 2008,第4期

机译：一种由聚（氮氧自由基）和银盐层制成的非易失性，双稳态和可重写存储器
2. Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer [J] . Jung Min Son, Woo Seung Song, Chan Ho Yoo, Applied Physics Letters . 2012,第18期

机译：使用聚（3,4-乙烯-二氧噻吩）：聚（苯乙烯磺酸盐）层与聚（甲基丙烯酸甲酯）缓冲层制造的有机双稳态器件的电稳定性和存储机理
3. Electrical Bistabilities and Memory Mechanisms of Organic Bistable Devices Fabricated Utilizing SnO_2 Nanoparticles Embedded in a Poly(methyl methacrylate) Layer [J] . Jin Ku Kwak, Dong Yeol Yun, Dong Ick Son, Journal of nanoscience and nanotechnology . 2010,第11期

机译：利用嵌入在聚甲基丙烯酸甲酯层中的SnO_2纳米颗粒制造的有机双稳态器件的电双稳态和记忆机理
4. Dependency of electrical characteristics on Au nano-crystal size for non-volatile memory fabricated with Au nano-crystal embedded in PVK(poly(N-vinylcarbazole)) layer [C] . Chang-Kyu Lee, Jong-Sung Kwon, In-Chul Na, IUMRS International Conference in Asia . 2007

机译：用Au纳米晶体嵌入PVK（聚（N-乙烯基咔唑））层的非挥发性储存的电气特性对Au纳米晶体尺寸的依赖性
5. Atomic Layer Deposition of Platinum Nano-particles and High-k Dielectrics for Non-volatile Charge Storage Memory Devices. [D] . Novak, Steven Randall. 2010

机译：用于非易失性电荷存储存储设备的铂纳米粒子和高k电介质的原子层沉积。
6. Oxygen Effects on Performance of Electrically Bistable Devices Based on Hybrid Silver Sulfide Poly(N-vinylcarbazole) Nanocomposites [O] . Jiantao Li, Aiwei Tang, Xu Li, 2016

机译：氧对基于混合硫化银聚（N-乙烯基咔唑）纳米复合材料的电双稳设备性能的影响
7. Microwave oven fabricated hybrid memristor devices for non-volatile memory storage [O] . E Verrelli, R J Gray, M O’Neill, 2014

机译：微波炉制造用于非易失性存储器存储的混合膜装置

A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

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