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首页> 外文期刊>Polymers for advanced technologies >ArF excimer laser resists based on fluoroalcohol
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ArF excimer laser resists based on fluoroalcohol

机译：基于氟醇的ArF准分子激光抗蚀剂

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This paper reviews IBM's 193 nm resist development efforts, placing an emphasis on the systems employing fluoroalcohol as an acidic group. Polymethacrylates were initially selected as a platform for their good transparency at 193 nm and then the emphasis on dry etch resistance prompted the work on all-norbornene systems. Carboxylic acid was employed in these resist systems as an acid group, which resulted in significant swelling during aqueous base development. Replacement of the carboxylic acid with fluoroalcohol has produced second generation 193 nm resist systems, the good dissolution behavior of which is offered by the fluoroalcohol group. The fluoroalcohol-based 193 nm resists in this study include cycloolefin-SO{sub}2, all-norbornene, trifluoromethylacrylate-nor-bornene (and vinyl ether), methacrylate, and silsesquioxane systems.
机译：本文回顾了IBM在193 nm抗蚀剂开发方面的努力，重点介绍了采用氟代醇作为酸性基团的系统。聚甲基丙烯酸酯最初因其在193 nm的良好透明性而被选为平台，然后对耐干蚀刻性的强调促使人们在全降冰片烯体系上进行了研究。羧酸在这些抗蚀剂体系中用作酸基团，导致在水性碱显影过程中明显溶胀。用氟代醇取代羧酸已产生了第二代193 nm光刻胶系统，氟代醇基团具有良好的溶解性能。在这项研究中，基于氟醇的193 nm抗蚀剂包括环烯烃-SO {sub} 2，全降冰片烯，三氟甲基丙烯酸酯-降冰片烯（和乙烯基醚），甲基丙烯酸酯和倍半硅氧烷体系。

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