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首页> 外文期刊>Polymers for advanced technologies >Polyimide/polyoxometalate copolymer thin films: synthesis, thermal and dielectric properties
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Polyimide/polyoxometalate copolymer thin films: synthesis, thermal and dielectric properties

机译：聚酰亚胺/多金属氧酸盐共聚物薄膜：合成，热和介电性能

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摘要

A mono-lancunary keggin-type decatungstosilicate (SiW11) polyoxometalate (POM) modified by g-aminopropyltriethoxysilane (KH550) was incorporated into polyimide (PI) through copolymerization. Nuclear magnetic resonance (NMR), fourier transition infrared spectroscopy (FTIR), and wide angle X-ray diffraction (WAXD) were used to characterize the structure and composition of the polyoxometalate-organosilane hybrid (SiW11KH550) and PI/SiW11KH550 copolymers. The differential scanning calorimetry (DSC) studies indicate that the glass transition temperature (Tg) of PI/SiW11KH550 copolymers increases from 330℃ (for neat PI) to 409℃(for the copolymer sample with 10 wt% of SiW11KH550). Dielectric measurement showed that both the dielectric constant and the dielectric loss for the copolymer thin films decreased with the increase in SiW11KH550 content, and the dielectric constant and dielectric loss values decreased to 2.1 and 3.54×10~(-3), respectively, for the copolymer sample with 10wt% of SiW11KH550. The incorporation of SiW11KH550 into polymer matrices is a promising approach to prepare PI films with a low dielectric constant and low dielectric loss.
机译：通过共聚将由g-氨基丙基三乙氧基硅烷（KH550）改性的单月钱的keggin型十氧化钨硅酸盐（SiW11）多金属氧酸盐（POM）掺入聚酰亚胺（PI）中。核磁共振（NMR），傅立叶变换红外光谱（FTIR）和广角X射线衍射（WAXD）用来表征多金属氧酸盐-有机硅烷杂化物（SiW11KH550）和PI / SiW11KH550共聚物的结构和组成。差示扫描量热法（DSC）研究表明，PI / SiW11KH550共聚物的玻璃化转变温度（Tg）从330℃（对于纯净PI）升高到409℃（对于含10 wt％SiW11KH550的共聚物样品）。介电测量结果表明，随着SiW11KH550含量的增加，共聚物薄膜的介电常数和介电损耗均降低，硅化后的介电常数和介电损耗值分别降至2.1和3.54×10〜（-3）。具有10wt％的SiW11KH550的共聚物样品。将SiW11KH550掺入聚合物基质中是制备具有低介电常数和低介电损耗的PI膜的有前途的方法。

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