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首页> 外文期刊>Progress in photovoltaics >Shunting Problems Due to Sub-Micron Pinholes in Evaporated Solid-Phase Crystallised Poly-Si Thin-Film Solar Cells on Glass
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Shunting Problems Due to Sub-Micron Pinholes in Evaporated Solid-Phase Crystallised Poly-Si Thin-Film Solar Cells on Glass

机译：玻璃上蒸发的固相晶化多晶硅薄膜太阳能电池中亚微米针孔引起的分流问题

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Recent progress in the metallisation of poly-silicon thin-film solar cells on glass, created by solid phase crystallisation (SPC) of evaporated amorphous silicon (EVA), revealed that shunting through sub-micron holes (density 100-200 mm~2) in the films causes severe shunting problems when the air-side metal contact is deposited onto these diodes, by creating effective shunting paths between the two highly doped layers of EVA cells. We present evidence of these pinholes by optical transmission and focussed ion beam (FIB) microscopic images and confirm the point-like pinhole shunts using lock-in thermographic images. The latter revealed that the Al rear electrode induces strong ohmic shunts below the grid lines and a high density of weak nonlinear shunts away from the grid lines. Two distinctly different approaches are shown to reduce the shunting problem to a negligible level: (i) to contact only a small fraction of the rear Si surface via a point contacting scheme, whereby the metal layer needs to be thin (<1 mu m) and the fractional area coverage small (<5 percent), and (ii) to deposit line contacts in a bifacial interdigitated scheme, whereby a thick layer of metal is deposited followed by a wet-chemical etching step that effectively reduces shunting by preferentially etching away the shunting paths. Test devices with an area of 1 cm2 achieve pseudo fill factors (pFF) of above 75 percent and diode ideality factors of below 1.3, demonstrating that the proposed methods are well suited for the metallisation of the rear surface of EVA solar cells.
机译：由蒸发的非晶硅（EVA）的固相结晶（SPC）在玻璃上进行的多晶硅薄膜太阳能电池金属化的最新进展表明，通过亚微米孔（密度为100-200 mm〜2）分流当空气侧金属触点沉积到这些二极管上时，通过在EVA电池的两个高掺杂层之间建立有效的分流路径，薄膜中的杂质会引起严重的分流问题。我们通过光学传输和聚焦离子束（FIB）显微图像提供这些针孔的证据，并使用锁定的热成像图像确认点状针孔分流器。后者表明，Al后电极在栅极线下方感应出强欧姆分流，并在远离栅极线的地方产生高密度的弱非线性分流。展示了两种截然不同的方法将分流问题减少到可以忽略的程度：（i）通过点接触方案仅接触硅背面的一小部分，因此金属层需要薄（<1微米）面积分数小（<5％），并且（ii）以双面指状方式沉积线接触，从而沉积厚金属层，然后进行湿化学刻蚀步骤，通过优先刻蚀掉来有效减少分流分流路径。面积为1 cm2的测试设备的伪填充因子（pFF）大于75％，二极管理想因子小于1.3，这表明所提出的方法非常适合EVA太阳能电池背面的金属化。

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