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首页> 外文期刊>Progress in photovoltaics >Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells
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Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

机译：高效太阳能电池采用非常规硅晶体和晶圆生长技术的材料要求

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摘要

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements. Copyright (C) 2015 John Wiley & Sons, Ltd.
机译：硅晶片约占晶体硅模块成本的40％，代表着巨大的技术创新潜力。矛盾的是，尽管进行了四十年的创新，但迄今为止非常规的晶圆生长技术仍未能取代多晶硅和直拉硅片。与传统的晶圆技术相比，大多数非常规材料的缺点之一是持续的载流子寿命不足，这限制了器件的效率潜力。在这篇有远见的文章中，我们回顾了一个缺陷管理框架，该框架已被证明能够成功实现无切口和铸造材料的毫秒级寿命。控制位错和在生长过程中缓慢扩散金属点缺陷，再加上在细胞加工过程中有效控制快速扩散的物种，对于实现高细胞效率至关重要。为了加快新型晶片开发的步伐，我们讨论了通过依赖注入的寿命测量来快速评估非常规晶片的器件效率潜力的方法。版权所有（C）2015 John Wiley＆Sons，Ltd.

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