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首页> 外文期刊>Quantum Matter >On the Diffusivity Mobility Ratio in III-V, Ternary and Quaternary Materials in the Presence of Intense Electric Field
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On the Diffusivity Mobility Ratio in III-V, Ternary and Quaternary Materials in the Presence of Intense Electric Field

机译：强电场作用下III-V，三元和四元材料的扩散迁移率

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摘要

An attempt is made in this paper to study the diffusivity mobility ratio (DMR) in III-V, ternary and quaternary materials in the presence of an intense electric field on the basis of a newly formulated electron dispersion relation. The unperturbed isotropic electron energy spectrum gets modified under intense electric field and changes into an anisotropic energy wave vector relation with energy dependent mass anisotropy. It has been found taking, n-InSb, Hg_(1-x)Cd_xTe and In_(1-x)Ga_xAs_yP_(1-y) lattice matched to InP as examples of Kane-type semiconductors for numerical computation that the DMR increases with increasing electron concentration and decreasing alloy composition for all the materials. The DMR becomes more or less constant with increasing the electric fields up to a certain values of the external electric field (depending on the constants of the energy band structure of a particular material) and then decreases smoothly with increasing electric field. In the absence of electric field all the results get transformed into the well-known expression of DMR and thus confirming the compatibility test. We have suggested an experimental method of determining the DMR for materials having arbitrary dispersion laws and the content of this paper finds four applications in the fields of quantum science and technology.
机译：本文尝试根据新建立的电子色散关系，研究存在强电场的III-V，三元和四元材料的扩散迁移率（DMR）。不受扰动的各向同性电子能谱在强电场下发生了变化，并变为与能量相关的质量各向异性的各向异性能波矢量关系。已经发现，将与InP匹配的n-InSb，Hg_（1-x）Cd_xTe和In_（1-x）Ga_xAs_yP_（1-y）晶格作为用于数值计算的Kane型半导体的例子，DMR随着增加而增加。电子浓度并降低所有材料的合金成分。随着电场的增加，DMR或多或少变得恒定，直至达到外部电场的某个值（取决于特定材料的能带结构的常数），然后随着电场的增加，DMR逐渐减小。在没有电场的情况下，所有结果都转化为DMR的公知表达式，从而证实了兼容性测试。我们提出了一种确定具有任意色散规律的材料的DMR的实验方法，并且本文的内容在量子科学和技术领域中发现了四个应用。

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