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首页> 外文期刊>Technical physics letters: Letters to the Russian journal of applied physics >Synthesis of GaN Nano- and Microwire Crystals Induced by a Titanium Nanolayer
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Synthesis of GaN Nano- and Microwire Crystals Induced by a Titanium Nanolayer

机译:钛纳米层诱导的GaN纳米线和微线晶体的合成

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摘要

The possibilities of a new method of growing gallium nitride nano- and microwire crystals using continuous titanium films with a thickness of 10–30 nm during growth are described. It is shown that this method can provide growth of high-quality GaN nanowire crystals at an extremely high rate of about 10 μm/min.
机译:描述了一种在生长过程中使用厚度为10–30 nm的连续钛膜生长氮化镓纳米线和微线晶体的新方法的可能性。结果表明,该方法可以以约10μm/ min的极高速率生长高质量的GaN纳米线晶体。

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