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首页> 外文期刊>The European Journal of Neuroscience >Distinct mechanisms of bidirectional activity-dependent synaptic plasticity in superficial and deep layers of rat entorhinal cortex.
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Distinct mechanisms of bidirectional activity-dependent synaptic plasticity in superficial and deep layers of rat entorhinal cortex.

机译：大鼠内嗅皮层表层和深层中双向活动依赖性突触可塑性的不同机制。

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摘要

Abstract The entorhinal cortex plays a key role in processing memory information in the brain; superficial layers relay information to, and deep layers receive information from, the hippocampus. The cellular mechanisms of memory are thought to include a number that produce long-term potentiation (LTP) and depression (LTD) of synaptic strength. Our work presents evidence that LTP and LTD occur simultaneously at memory-relevant synapses. We report here that low frequency stimulation generates NMDA receptor-dependent LTD in Wistar rat superficial (layers II and III), and LTP in the deep entorhinal cortex layers (layers V and VI). LTP in deep layers is masked by simultaneously occurring voltage-gated calcium channel-dependent LTD. Our data support a novel mechanism for the sliding-threshold (BCM) model of synaptic plasticity: The sliding thresholds for induction of LTP and LTD in entorhinal cortex deep layers will be driven by the relative activation state of NMDA receptors and voltage-gated calcium channels. The co-expression of LTD and LTP at presynaptic sites in the entorhinal cortex deep layers reveals an intriguing mechanism for differential processing of synaptic information, which may underlie the vast dynamic capacity for information storage by this cortical structure.
机译：摘要内嗅皮层在处理大脑记忆信息中起着关键作用。表层将信息中继到海马，深层从海马接收信息。人们认为记忆的细胞机制包括许多会产生突触强度的长期增强（LTP）和抑郁（LTD）的现象。我们的工作提供了证据，即LTP和LTD在与记忆有关的突触中同时发生。我们在这里报告，低频刺激在Wistar大鼠浅表层（II和III层）和深内嗅皮质层（V和VI层）中产生LTP产生NMDA受体依赖性LTD。同时发生的电压门控钙通道依赖性LTD掩盖了深层的LTP。我们的数据支持突触可塑性的滑动阈值（BCM）模型的新机制：内嗅皮层深层中LTP和LTD诱导的滑动阈值将由NMDA受体和电压门控钙通道的相对激活状态驱动。 LTD和LTP在内嗅皮层深层突触前位点的共表达揭示了一种对突触信息进行差异处理的有趣机制，这可能是通过这种皮层结构存储信息的巨大动态能力的基础。

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