Resonant photoemission of rare earth doped GaN thin films

McHale S.R.; McClory J.W.; Petrosky J.C.; Wu J.; Palai R.; Losovyj Y.B.; Dowben P.A.

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Resonant photoemission of rare earth doped GaN thin films

机译：稀土掺杂GaN薄膜的共振光发射

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The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f~(14) occupancy.

机译：使用同步加速器光发射光谱法研究了各种稀土掺杂的GaN薄膜（RE = Gd，Er，Yb）的4d→4f Fano共振。共振光发射法诺曲线表明，主要的Gd和Er稀土4f重量在价带最大值以下约5-6 eV，类似于许多其他稀土掺杂半导体的价带中的4f重量。对于Yb，掺Yb的GaN的价带几乎没有共振增强，这与4f〜（14）的占有率相一致。

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《The European physical journal. Applied physics》 |2011年第1期|共6页
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McHale S.R.; McClory J.W.; Petrosky J.C.; Wu J.; Palai R.; Losovyj Y.B.; Dowben P.A.;
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正文语种 eng
中图分类物理学;
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1. Resonant photoemission of rare earth doped GaN thin films [J] . McHale S.R., McClory J.W., Petrosky J.C., The European physical journal. Applied physics . 2011,第1期

机译：稀土掺杂GaN薄膜的共振光发射
2. Impact of Fe doping on the electronic structure of SrTiO3 thin films determined by resonant photoemission [J] . Kubacki J., Kajewski D., Goraus J., The Journal of Chemical Physics . 2018,第15期

机译：Fe掺杂对Srtio3薄膜电子结构的影响通过谐振光曝光
3. Electronic structure of Fe (0-5 at.%) doped MoO2 thin films studied by resonant photoemission spectroscopy [J] . Prakash R, Choudhary RJ, Phase DM Journal of Physics. Condensed Matter . 2008,第33期

机译：共振光发射光谱法研究Fe（0-5 at。％）掺杂的MoO2薄膜的电子结构
4. Resonant Photoemission Of Fe Doped TiO_(2) Thin Films Using Indus-1 Synchrotron Source [C] . Komal Bapna, D. M. Phase, A. Wadikar, DAE Solid State Physics Symposium . 2011

机译：使用Indus-1同步rotron源的Fe掺杂TiO_（2）薄膜的共振光缩放
5. Visible and near infrared emitting thin film electroluminescent gallium nitride doped with rare earths. [D] . Kim, Joo Han. 2003

机译：掺杂稀土元素的可见光和近红外发射薄膜电致发光氮化镓。
6. Improving the Photoelectric Characteristics of MoS2 Thin Films by Doping Rare Earth Element Erbium [O] . Miaofei Meng, Xiying Ma 2016

机译：掺杂稀土元素Er改善MoS2薄膜的光电特性
7. Resonant photoemission of rare earth doped GaN thin films [O] . McHale, S. R., McClory, J. W., Petrosky, J. C., 2011

机译：稀土掺杂GaN薄膜的共振光电发射
8. Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications [R] . Steckl, A. J., Wang, R., Zhong, M. 2010

机译：稀土掺杂GaN薄膜注入激光用于可见光和红外应用

Resonant photoemission of rare earth doped GaN thin films

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