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首页> 外文期刊>The European physical journal. Applied physics >Evolution of high aspect ratio and nano-grass structures using a modified low plasma density reactive ion etching
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Evolution of high aspect ratio and nano-grass structures using a modified low plasma density reactive ion etching

机译:使用改进的低等离子体密度反应离子刻蚀技术发展高长径比和纳米草结构

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摘要

We report a modified deep reactive ion etching method to realize high aspect ratio features and nano-grasses on silicon substrates. This etching technique uses sequential etching and passivation sub-cycles and it is based on three gases of H_2, O_2 and SF_6 in the presence of rf-plasma. By adjusting the etching parameters such as the flows of various gases, the plasma power and duration of each cycle, the process can be controlled to obtain high aspect ratio vertical structures on silicon substrates. Features with aspect ratios of the order of 30-50 and heights of the order of 25-30 μm are obtained. On the other hand, one can program the etching parameters to achieve grass-full structures in desired places and with pre-designed patterns. The formation of nano-grass on silicon surface, improves its wetability with water and oil spills. This property has been used to entrap carbon nanotubes onto nano-structured surfaces in desired places.
机译:我们报告了一种改进的深反应离子刻蚀方法,可在硅基板上实现高深宽比特征和纳米草。该蚀刻技术使用顺序蚀刻和钝化子循环,并且基于存在rf等离子体的H_2,O_2和SF_6三种气体。通过调整蚀刻参数,例如各种气体的流量,等离子功率和每个循环的持续时间,可以控制该过程以获得硅基板上的高纵横比垂直结构。获得具有30-50数量级的纵横比和25-30μm数量级的高度的特征。另一方面,可以对蚀刻参数进行编程,以在所需位置以预先设计的图案实现满草的结构。在硅表面上形成纳米草,提高了其对水和漏油的润湿性。该特性已用于将碳纳米管截留在所需位置的纳米结构表面上。

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