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首页> 外文期刊>The European physical journal, B. Condensed matter physics >Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms
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Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms

机译:硅中的声子传输,色散特性选择对非谐电阻机制描述的影响

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摘要

Thermal conductivity in semiconductors is investigated through the phonon transport description. From the former studies based on the gas kinetic theory to the recent ones using the Monte Carlo methods or the radiative multifux models, each technique involves the dispersion properties of the crystal lattice. Besides, most of these studies have been done in the frame of the relaxation time approximation of collision processes. In this study, the importance of the choice of the dispersion curves and time relaxation parameters are pointed out. A complete description of the transverse umklapp interaction is provided without any adjustment parameters. New insights of the energy conservation surface calculation, involved in phonon-phonon time relaxation expression, are provided. Using simple and more complex models, we have determined the heat transport properties, in the temperature range from 50 K to 1000 K in bulk silicon. We especially focused our attention on the thermal conductivity as a function of the phonon anharmonic resistive mechanisms for two models of dispersion: linear and quadratic. We demonstrate that very different thermal conductivity properties can be calculated according to the chosen description of lattice vibrations.
机译:通过声子传输描述研究了半导体中的热导率。从以前基于气体动力学理论的研究到最近使用蒙特卡洛方法或辐射多峰模型的研究,每种技术都涉及晶格的色散特性。此外,大多数这些研究都是在碰撞过程的弛豫时间近似框架内完成的。在这项研究中,指出了选择色散曲线和时间松弛参数的重要性。无需任何调整参数即可提供关于横向umklapp相互作用的完整描述。提供了涉及声子-声子时间弛豫表达的能量守恒表面计算的新见解。使用简单和更复杂的模型,我们确定了散装硅在50 K至1000 K的温度范围内的传热特性。对于两种色散模型:线性和二次型,我们特别关注导热率与声子非谐阻抗机制的关系。我们证明可以根据所选择的晶格振动描述来计算非常不同的导热系数。

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