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首页> 外文期刊>The International Journal of Advanced Manufacturing Technology >A new method of non-contact measurement for microtopography in semiconductor wafer implementing a new optical probe based on the precision defocus measurement
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A new method of non-contact measurement for microtopography in semiconductor wafer implementing a new optical probe based on the precision defocus measurement

机译：基于精密散焦测量的新型光学探针实现的半导体晶片微形貌非接触测量新方法

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摘要

In this paper, a new method of non-contact measurement has been developed for 3D topography for a semiconductor wafer, implementing a new optical probe based on precision defocus measurement. The developed technique consists of the new optical probe, precision stages, and the measurement/control system. The basic principle of the technique is to use the reflected slit beam from the specimen surface to measure the deviation of the specimen surface. The defocusing distance can be measured by the reflected slit beam, where the defocused image is measured by the proposed optical probe, giving very high resolution. A distance measuring formula has been proposed for the developed probe, using the laws of geometric optics. A precision calibration technique has been applied, giving about 10 nm resolution and 72 nm four-sigma uncertainty. In order to quantitise the micro pattern on the specimen surface, some efficient analysis algorithms have been developed to analyse the 3D topography pattern and some parameters of the surface. The developed system has been successfully applied to measure the wafer surface, demonstrating the line scanning feature and the excellent 3D measurement capability.
机译：本文针对半导体晶片的3D形貌开发了一种新的非接触式测量方法，该方法实现了一种基于精密散焦测量的新型光学探头。开发的技术包括新的光学探头，精密平台和测量/控制系统。该技术的基本原理是使用从样品表面反射的狭缝光束来测量样品表面的偏差。散焦距离可以通过反射的狭缝光束进行测量，而散焦图像可以通过提出的光学探头进行测量，从而提供了很高的分辨率。已经提出了一种使用几何光学定律为已开发的探头测距的公式。已应用一种精密校准技术，可提供约10 nm的分辨率和72 nm的四西格玛不确定度。为了量化样本表面上的微图案，已经开发了一些有效的分析算法来分析3D地形图案和表面的一些参数。开发的系统已成功应用于晶片表面的测量，展示了线扫描功能和出色的3D测量能力。

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