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WETTING ON AN ATTRACTIVE COMPACT SPHERICAL SUBSTRATE

机译:在有吸引力的紧凑球形基质上润湿

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The wetting phenomena on a compact spherical substrate of radius R, immersed in an one-component bulk vapor, are studied as functions of R and epsilon(W) (a parameter characterizing the adsorbent) within the context of Sullivan's model. The substrate acts as an external potential V-ext(r) on fluid molecules; V-ext(r) is found by integrating over the adsorbent's volume and its strength depends strongly on R. The fluid molecules are of constant diameter d. The density functional theory is used to analyze the structure of the wall-vapor interface by properly generalizing Sullivan's model. For any value of R, the substrate is either incompletely wet or nonwet; the density profiles, labeled by epsilon(W), display only one growth mode, that from thin to thick film as epsilon(W) increases (in this case adsorption is always positive); for larger values of R, but small epsilon(W)'s, there is, in addition, another transition from nonwetting to wetting, adsorption now changes from negative to positive as epsilon(W) increases. In all cases, the thickness l of the wetting layer grown on the substrate is of the order of ln R. In conclusion, the effect of a spherical substrate on an one-component bulk vapor in comparison with that of a planar substrate is to reduce the three wetting classes of the planar adsorbent to two which are identified with class III, nonwetting, and class II, partial wetting with thin and thick films; class I, complete wetting, is absent. (C) 1996 American Institute of Physics. [References: 23]
机译:在沙利文模型的背景下,研究了半径为R的紧凑球形基底上浸入单组分本体蒸气中的润湿现象,它是R和epsilon(W)(表征吸附剂的参数)的函数。底物充当流体分子上的外部电势V-ext(r)。 V-ext(r)是通过在吸附剂的整个体积上积分而发现的,其强度在很大程度上取决于R。流体分子的直径为d。通过适当地推广Sullivan模型,使用密度泛函理论来分析壁-蒸汽界面的结构。对于任何R值,基材要么是完全湿润的要么是不湿润的。用ε(W)标记的密度分布仅显示一种生长模式,随着ε(W)的增加,薄膜从厚膜到厚膜(在这种情况下,吸附始终为正);对于较大的R值,但较小的ε(W),此外,还有一个从非润湿到润湿的转变,随着ε(W)的增加,吸附现在从负变为正。在所有情况下,在基板上生长的润湿层的厚度l约为lnR。总之,与平面基板相比,球形基板对单组分本体蒸气的影响要减小平面吸附剂的三种润湿类别,分别为III类(非润湿性)和II类(薄膜和厚膜的部分润湿性)。完全润湿的I类不存在。 (C)1996年美国物理研究所。 [参考:23]

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