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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Solution-Processable Barium Titanate and Strontium Titanate Nanoparticle Dielectrics for Low-Voltage Organic Thin-Film Transistors
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Solution-Processable Barium Titanate and Strontium Titanate Nanoparticle Dielectrics for Low-Voltage Organic Thin-Film Transistors

机译：用于低压有机薄膜晶体管的溶液可加工钛酸钡和钛酸锶纳米粒子电介质

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摘要

A series of solution-processable oleic-acid capped barium titanate and strontium titanate nanoparticles was synthesized and spin-coated to form homogeneous high-k dielectric films for organic thin-film transistors (TFTs). The dielectric constant k of the nanoparticle films was tunable in the range from 4.1 to 9.3 by altering the molar ratio of oleic-acid surfactant to synthesis precursor. Low-voltage modulated high-performance organic TFTs were fabricated using nanoparticle films as the dielectric components. Flexible bottom-gate pentacene TFTs exhibited outstanding device performance with field-effect mobility, μ, in the range of 2.0-3.5 cm~2 V~(-1) s~(-1) and on/off ratios of about 1 x 10~4 at low gate voltage. Top-gate poly(3,3"'-didodecylquaterthiophene) TFTs also showed high device performance with μ of 0.05-0.1 cm~2 V~(-1) s~(-1) and on/off ratios of 1 x 10~3 to 1 x 10~4.The low-voltage performance of the TFTs could be attributed to a low density of trapped states at the interfaces between the organic semiconductors and the nanoparticle dielectric films. This research provides a series of promising dielectric materials for fabrication of superior organic TFTs through a solution process and fundamentally suggests that low trapped state density at the semiconductor/ dielectrics interface may be an important factor to achieve low-voltage modulation in organic TFTs.
机译：合成了一系列可溶液处理的油酸封端的钛酸钡和钛酸锶纳米颗粒，并旋涂形成有机薄膜晶体管（TFT）的均质高k介电膜。通过改变油酸表面活性剂与合成前体的摩尔比，可以将纳米粒子膜的介电常数k调整为4.1〜9.3。使用纳米颗粒薄膜作为电介质组件，制造了低压调制的高性能有机TFT。柔性底栅并五苯TFT表现出出色的器件性能，场效应迁移率μ在2.0-3.5 cm〜2 V〜（-1）s〜（-1）范围内，开/关比约为1 x 10在低栅极电压下为〜4。顶栅聚（3,3“'-二十二烷基四噻吩）TFT还具有较高的器件性能，μ为0.05-0.1 cm〜2 V〜（-1）s〜（-1），开/关比为1 x 10〜 3到1 x 10〜4。TFT的低电压性能可以归因于有机半导体和纳米粒子介电膜之间界面处的俘获态密度低，这项研究为制造提供了一系列有希望的介电材料通过溶液法制备高级有机TFT的方法，从根本上表明，半导体/电介质界面处的低俘获态密度可能是实现有机TFT中低压调制的重要因素。

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