首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Photodissociation of N_2O. I. Ab Initio Potential Energy Surfaces for the Low-Lying Electronic States X-tilde ~1A', 2 ~1A', and 1 ~1A'
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Photodissociation of N_2O. I. Ab Initio Potential Energy Surfaces for the Low-Lying Electronic States X-tilde ~1A', 2 ~1A', and 1 ~1A'

机译:N_2O的光解离。 I.低空电子状态X倾斜〜1A',2〜1A'和1〜1A的从头算势能面”

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摘要

Adiabatic potential energy surfaces of the three lowest lying singlet states, X-tilde ~1A' 2 ~1A', and 1 ~1A'', of N_2O have been computed as a function of the R_(N_2-O) bond distance and the Jacobi angle. The calculations are performed using the complete-active-space self-consistent field (CASSCF) and the multireference configuration interaction (MRCI) electronic structure methods. It is shown that there is a wide avoided crossing between the ground, X-tilde ~1A', and lowest excited, 2 ~1A',electronic state. This avoided crossing is thought to give rise to a seam of conical intersection at other N-N separations. Both excited state surfaces display important conical intersections at linear geometries. The transition dipole moment surfaces for the two excitation processes (2 ~1A' implied by X-tilde ~1A' and 1 ~1A'' implied by X-tilde ~1A') are also presented. These calculations provide the basic data needed to compute the dynamics of the N_2O + hv -> N_2 + O(~1D) photodissociation process for photon frequencies in the range 5.2 eV (240 nm) to 7.3 eV 170 nm).
机译:已计算出N_2O的三个最低单线态X_tilde〜1A'2〜1A'和1〜1A''的绝热势能面作为R_(N_2-O)键距和雅各比角。使用完全活动空间自洽字段(CASSCF)和多引用配置交互(MRCI)电子结构方法执行计算。结果表明,在大地,X倾斜〜1A'和最低激发态2〜1A'电子状态之间有一个可避免的交叉点。据认为,这种避免的交叉会在其他N-N间距处形成圆锥形相交的接缝。两个激发态表面在线性几何形状处显示重要的圆锥形相交。还介绍了两个激励过程的跃迁偶极矩表面(X波浪〜1A'暗示2〜1A'和X波浪〜1A'暗示1〜1A'')。这些计算为计算5.2 eV(240 nm)至7.3 eV 170 nm范围内的光子频率的N_2O + hv-> N_2 + O(〜1D)光解离过程的动力学提供了基本数据。

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