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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Pathway Studies in Si(2p) Inner-Shell Processes of H_2Si(CH_3)_2 by Mass Spectrometry and the Photoion Coincidence Method in the Range 24-133 eV
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Pathway Studies in Si(2p) Inner-Shell Processes of H_2Si(CH_3)_2 by Mass Spectrometry and the Photoion Coincidence Method in the Range 24-133 eV

机译：H_2Si（CH_3）_2的Si（2p）内壳过程的质谱和光电子重合方法在24-133 eV范围内的途径研究

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摘要

Dissociative multiple photoionization processes of dimethylsilane (H_2Si(CH_3)_2) have been investigated in the valence and Si(2p) core level photoexcitation/photoionization regions by time-of-flight (TOF) mass spectrometry coupled to synchrotron radiation, operated in both the photoelectron-photoion coincidence (PEPICO) and photoion-photoion coincidence (PIPICO) modes. Two group absorption bands below and above the Si(2p_(3/2)) threshold 106.51 eV are observed in both total photoion and PIPICO yield curves. Various monocations of H_n~+(n = 1-3), CH_n~+(n = 0-4), C_2H_n~+(n = 1-3), SiH_n~+(n = 0-3), SiCH_n~+(n = 0-5), SiC_2H_n~+(n = 0-7) are observed, the yields depending on the excitation energy. In the valence ionization region, especially E < 30 eV, extrusions of H, H_2, CH_3, and of CH_4 (or H + CH_3) and CH_3 + H_2 (or H + CH_4), are predominantly observed leading to the formation of SiC_2H_n~+ (n = 6, 7) and SiCH_n~+ (n = 3-5), respectively, whereas in the Si(2p) excitation and ionization regions, ionic fragments of smaller masses such as H~+, CH_3~+, Si~+, and SiCH_3~+ are relatively abundant in the PEPICO spectra. Bond-selective fragmentation processes occur in the two absorption regions. An ab initio calculation was also carried out to predict discrete excitation energies and their modes corresponding to the transitions from the core to valence and Rydberg orbitals.
机译：通过飞行时间（TOF）质谱和同步加速器辐射对二价甲硅烷（H_2Si（CH_3）_2）的解离多光电离过程在化合价和Si（2p）核心能级光激发/光电离区域进行了研究光电子-光子重合（PEPICO）和光子-光子重合（PIPICO）模式。在总光电离和PIPICO产量曲线中均观察到Si（2p_（3/2））阈值106.51 eV之下和之上的两组吸收带。 H_n〜+（n = 1-3），CH_n〜+（n = 0-4），C_2H_n〜+（n = 1-3），SiH_n〜+（n = 0-3），SiCH_n〜+的各种单键（n = 0-5），观察到SiC_2H_n〜+（n = 0-7），产率取决于激发能。在价电离区，尤其是E <30 eV，主要观察到H，H_2，CH_3和CH_4（或H + CH_3）和CH_3 + H_2（或H + CH_4）的挤出，导致SiC_2H_n〜的形成。 +（n = 6、7）和SiCH_n〜+（n = 3-5），而在Si（2p）激发和电离区域中，较小质量的离子碎片，例如H〜+，CH_3〜+，Si在PEPICO光谱中~~和SiCH_3〜+相对丰富。键选择断裂过程发生在两个吸收区域。还进行了从头算计算，以预测离散的激发能及其模式，其与从核到价和里德伯格轨道的跃迁相对应。

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