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Attaching Organic Layers to Semiconductor Surfaces

机译:将有机层附着到半导体表面

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摘要

Methods that can be used to tailor the surface properties of semiconductors will become increasingly important as new applications for semiconductor-based materials continue to be developed. The attachment of organic groups in particular can impart new functionality to the surface, providing properties such as passivation, molecular recognition, lubrication, or biocompatibility. This article will focus on organic functionalization of Group IV surfaces using vapor phase delivery in a dry processing environment. A combination of experimental and theoretical methods has been applied to identify the bonding and reactivity of the organic layers at the semiconductor surface. The attachment chemistry of dienes and amines at the Si(100)-2 * 1 surface will be described. We show that the [4 + 2] cycloaddition (Diels-Alder reaction) occurs readily for a range of conjugated dienes at the (100)-2 * 1 surface of Si, and that the reaction occurs at the surfaces of Ge(100) and C(100) as well. In amine reactivity, competing reaction pathways such as N-H bond dissociation and dative bonding through the nitrogen lone pair have been observed. The potential for these different classes of attachment reactions to impact future applications will be discussed.
机译:随着继续开发基于半导体的材料的新应用,可用于调整半导体表面特性的方法将变得越来越重要。尤其是有机基团的附着可以赋予表面新的功能,从而提供诸如钝化,分子识别,润滑或生物相容性等性能。本文将重点讨论在干法加工环境中使用气相输送对第IV组表面进行有机官能化。实验方法和理论方法的组合已被应用于识别半导体表面上有机层的键合和反应性。将描述二烯和胺在Si(100)-2 * 1表面的附着化学。我们表明[4 + 2]环加成(狄尔斯-阿尔德反应)容易发生一系列共轭二烯在(100)-2 * 1 Si的表面,并且该反应发生在Ge(100)的表面以及C(100)。在胺反应性中,已经观察到竞争反应途径,例如通过氮孤对的N-H键解离和键合。将讨论这些不同类别的附着反应影响未来应用的潜力。

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